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    MT28F016S2 Search Results

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    MT28F016S3VG-9

    Abstract: TRS090 A4 marking Quantum Devices
    Text: OBSOLETE ADVANCE 2 MEG x 8 EVEN-SECTORED FLASH MEMORY MT28F016S3 FLASH MEMORY 3V Only, Dual Supply FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10µA MAX 3V-only, dual-supply operation:


    Original     		PDF MT28F016S3 110ns 40-Pin 110ns 40-lead MT28F016S3VG-9 TRS090 A4 marking Quantum Devices

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 FLASH MEMORY SMARTVOLTAGE SVT-II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect


    Original     		PDF MT28F160S2 32K-word) 120ns 100ns, 150ns

    G1996

    Abstract: No abstract text available
    Text: ADVANCE MT28F016S2 |V |IC = R O N 2 MEG x 8 FLASH M E M O R Y 2 MEG x 8 S m a rtV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX


    OCR Scan     		PDF MT28F016S2 120ns 100ns, 150ns 40-Pin MT28F016S2 MT20FO1SS2 G1996

    AS5V

    Abstract: No abstract text available
    Text: ADVANCE MT28F016S2 V 2 MEG x 8 FLASH M E M O R Y M IC R O N 2 MEG x 8 SVT-II , SECTORED S m art V oltage ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|lA MAX Second Generation SmartVoltage* Technology (SVT-II):


    OCR Scan     		PDF MT28F016S2 120ns, 150ns 40-Pin MT2BF016S2 AS5V

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |u |IC :R O N 2 meg x 8 EVEN-SECTORED FLASH MEMORY MT28F016S2 FLASH MEMORY S m ar tV o ltag e S V T -II • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX


    OCR Scan     		PDF MT28F016S2 120ns 100ns, 150ns 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT28F016S2 2 MEG x 8 FLASH MEMORY MICRON • quantumdevices,me. FLASH MEMORY 2 MEG x 8 S m a r tV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX


    OCR Scan     		PDF MT28F016S2 120ns 100ns, 150ns 40-Pin 70ns/80ns MT2BF016S2 001bS4b

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 MT28F016S2 V 2 MEG x 8 FLASH MEMORY FLASH MEMORY 2 MEG x 8 S m artV o ltag e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX Second Generation SmartV oltage* Technology (SVT-II):


    OCR Scan     		PDF MT28F016S2 120ns, 150ns 70ns/120ns 90ns/150ns

    6REV

    Abstract: No abstract text available
    Text: ADVANCE -. TE C? x .N-StÜT ü H E MT28F016S2 FLASH MEMORY S m artV oltag e • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lO pA M A X Second Generation Sm artVoltage Technology (SVT-II):


    OCR Scan     		PDF 120ns 100ns, 150ns MT28F016S2 40-Pln VPS12/23 6REV

    MT28F160S2

    Abstract: No abstract text available
    Text: ADVANCE I^ IIC R D N M T28F160S2 1 MEG x 16. 2 MEG x 8 FLASH M EM O R Y FLASH MEMORY 1 MEG x 16, 2 MEG x 8 S m a r t V o lt a g e SVT-II , SECTORED ERASE • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 6 4 K B / (32K-word) erase blocks


    OCR Scan     		PDF T28F160S2 32K-word) 120ns 100ns, 150ns 56-Pin6 16-bit MT28F1B0S2 MT28F160S2

    Quantum Devices

    Abstract: No abstract text available
    Text: ADVANCE MICRON 2 MEG x 8 E V E N - S E C T O R E D F L ASH M E M O R Y FLASH MEMORY MT28F016S3 I QUANTUM Devices, HC. 3V Only, Dual Supply FEATURES * * * * * * * * Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX 3V-only, dual-supply operation:


    OCR Scan     		PDF MT28F016S3 110ns 40-lead MT28F016S3VG-9 MT28F016S3 Quantum Devices

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC Z R O N I 2 MEG x 8 EVEN-SECTORED FLASH MEMORY FLASH MEMORY MT28F016S3 3V Only, Dual Supply • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10nA MAX 3V-only, dual-supply operation:


    OCR Scan     		PDF MT28F016S3 110ns 40-Pin 110ns 40-lead VPS12/23 0G5Gb32

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16,2 MEG x 8 FLASH MEMORY S m a rtV o lta g e S V T -II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect


    OCR Scan     		PDF MT28F160S2 32K-word) 120ns 100ns, 150ns 001b47T

    Micron CMOS 1987

    Abstract: No abstract text available
    Text: ADVANCE 2 M EG x 8 MEMORY' MT28F016S3 FLASH MEMORY 3V Only, Dual Supply • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lOfiA MAX 3V-only, dual-supply operation: 2.7V to 3.6V Vcc 2.7V to 3.6V or 5V ±10% Vpp


    OCR Scan     		PDF 110ns MT28F016S3 40-Pin Micron CMOS 1987