U15-U10
Abstract: MT18D236
Text: MT9D136, MT18D236 1 MEG. 2 MEG x 36 DRAM MODULE |V /|ICZRO N DRAM MODULE 1 MEG, 2 MEG x 36 FEATURES PIN ASSIGNMENT Front View • C o m m o n R A S co n tro l p er sid e p in o u t in a 72-p in , sin g le-in -lin e m em o ry m o d u le (SIM M ) • H ig h -p e rfo rm a n ce C M O S silico n -g a te p ro cess.
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MT9D136,
MT18D236
72-Pin
MT1BD236
U15-U10
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MT4C4007JDJ
Abstract: No abstract text available
Text: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process
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MT9D136A
MT18D236A
72-pin,
602mW
024-cycle
72-pin
MT4C4007JDJ
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MT18D236
Abstract: No abstract text available
Text: DRAM MODULE 1 MEG, 2 MEG x 36 4, 8 MEGABYTE, 5V 4 ,8ME GABY TE’5VFAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • Common RAS control per side pinout in a 72-pin, single-in-line m emory module (SIMM) • High-performance CM OS silicon-gate process.
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OCR Scan
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PDF
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72-pin,
024-cycle
72-Pin
DD-10)
MT9D136,
MT18D236
MT18D236
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MT4C4001d
Abstract: MT4C4001DJ dram 72-pin simm micron 32
Text: ÛOQSMbS 1 MÊtlRN ADVANCE .in,-;."M~1'.lu1.il".,1,.J.rM*1. ^ J W 1 T -M -zz-n 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CMOS silicon gate process.
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72-pin
500mW
024-cycle
MT18D236M/G
D236Z
100ns
0002M73
MT4C4001d
MT4C4001DJ
dram 72-pin simm micron 32
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MT4C4007JDJ
Abstract: No abstract text available
Text: ADVANCE M T 9 D 1 3 6 A X, M T 1 8 D 2 3 6 A X 1 MEG, 2 MEG x 36 DR AM M O D U L E S DRAM MODULE 1 MEG, 2 MEG x 36 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES * * * * * * * * PIN ASSIGNMENT Front View Four CAS# ECC p in o u t in a 72-pin, single-in-line
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OCR Scan
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PDF
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72-Pin
72-pin,
024-cycle
MT4C4007JDJ
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