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    MSM51C Price and Stock

    OKI Semiconductor MSM51C464A-80

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MSM51C464A-80 1,024
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    OKI Semiconductor MSM51C464A-70RS

    Dynamic RAM, Fast Page, 64K x 4, 18 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MSM51C464A-70RS 430
    • 1 $9
    • 10 $9
    • 100 $3.9
    • 1000 $3.6
    • 10000 $3.6
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    OKI Semiconductor MSM51C256A-70RS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MSM51C256A-70RS 322
    • 1 $3.24
    • 10 $3.24
    • 100 $2.16
    • 1000 $1.998
    • 10000 $1.998
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    OKI Semiconductor MSM51C256-80RS

    51C256-80RS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MSM51C256-80RS 148
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    OK International MSM51C262-80ZS

    VRAM, FAST PAGE, 64KX4, 24 Pin, Plastic, ZIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MSM51C262-80ZS 92
    • 1 $21.1512
    • 10 $21.1512
    • 100 $17.9785
    • 1000 $17.9785
    • 10000 $17.9785
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    MSM51C Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM51C256 OKI Electronic Components 262144 Word x 1-bits Dynamic Ram Scan PDF
    MSM51C256-10 OKI Electronic Components 262,144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256-10 OKI Electronic Components 262,144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256-10JS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256-10RS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256-12 OKI Electronic Components 262,144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256-12JS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256-12RS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256-8 OKI Electronic Components 262,144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256-80 OKI Electronic Components 262,144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256-8JS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256-8RS OKI Semiconductor 264,144 Word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256A OKI Electronic Components 262144-word x 1-bit Dynamic Ram Scan PDF
    MSM51C256JS-10 OKI Semiconductor 262,144-word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256JS-80 OKI Semiconductor 262,144-word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256RS OKI Electronic Components 262144 WORD x 1-BITS DYNAMIC RAM Scan PDF
    MSM51C256RS-10 OKI Semiconductor 262,144-word x 1-Bit Dynamic RAM Scan PDF
    MSM51C256RS-80 OKI Semiconductor 262,144-word x 1-Bit Dynamic RAM Scan PDF
    MSM51C262-10 Unknown Video Signal Processor IC Data Book 1993 Scan PDF
    MSM51C262-12 Unknown Video Signal Processor IC Data Book 1993 Scan PDF

    MSM51C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM6389B

    Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
    Text: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU


    Original
    PDF MD56V62160 MD56V62160E MSM514223B MSM51C2800 MSM51C4256 ML62882A MSM51 4223C ML62886 MSM6389B dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original
    PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    T462 transistor

    Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
    Text: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.


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    PDF b72424D MSM51C256 DIP/18 MSM51C256-80 MSM51C25efore T462 transistor EZ613 transistor t462 MSM51C256-10 MSM51C256RS

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C464A 65,536-Word x 4-Bit DYNAMIC RÀM GENERAL DESCRIPTION T h e M S M 5 1 C 4 6 4 A is a n e w g e n e ra tio n d y n a m ic R A M o rg a n iz e d a s 6 5 .5 3 6 -w o rd x 4 -b it. T h e te c h n o lo g y u s e d to fa b ric a te th e M S M 5 1 C 4 6 4 A is O K I’s C M O S s ilic o n g a te p ro c e s s te c h n o l­


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    PDF MSM51C464A 536-Word

    FZJ 131

    Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
    Text: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


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    PDF MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 MSM51C256-12 FZJ 131 MSM51C256RS dynamic ram binary cell

    M51C262

    Abstract: MSM51C262 IS916 3CX5
    Text: O K I semiconductor M S M 5 1 C 2 6 2 _ _ High Performance Low Power 64K x 4 Multi-port Memory with Fast Page Mode GENERAL DESCRIPTION The OKI MSM51C262 is a high speed 65,536 x 4-bit multiport CMOS dynamic memory. The tw o


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    PDF MSM51C262 M51C262 IS916 3CX5

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech ­


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    PDF MSM51C256A 144-Word 144-w 51C256A-7lid MSM51C256A

    51c464

    Abstract: MSM51C464A MSM51C464A-10 ZIP20-P-400
    Text: O K I Semiconductor MSM51C464A G5,536-Word x 4 'B it D Y N A M IC RA M DESCRIPTION The MSM51C464A is a new generation dynamic R A M organized as 65,536-woid x. 4-bit The technology used to fabricate MSM51C464A is O K I's C M O S silicon gate process technology. The


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    PDF MSM51C464A MSM52C464A 536-word lC464A 18-Pin 300mil MSM51G464A 51c464 MSM51C464A MSM51C464A-10 ZIP20-P-400

    FZJ 131

    Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
    Text: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


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    PDF OD04143 MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 FZJ 131 BE454 MSM51C256-12 MSM51C256RS L262144 dynamic ram binary cell

    18-PIN

    Abstract: MSM51C256A 1772B
    Text: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.


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    PDF MSM51C256A 144-Word MSM51C256A b724240 24g40 D01773E 18-PIN 1772B

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch ­


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    PDF MSM51C256A 144-Word 144-w

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The


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    PDF MSM51C464A 536-Word MSM51C464A b72M240 00177Mb

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynam ic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology. The device operates at a single 5V pow er supply. Its I /O pins are TTL compatible.


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    PDF MSM51C256A 144-Word MSM51C256A

    EZ613

    Abstract: MSM51C256-10 MSM51C256 MSM51C256RS
    Text: y - y . . O K I SEMICONDUCTOR GROUP O K I semiconductor_ T -V * MSM51C256 2 6 2 ,1 4 4 W ORD X1-BITS D YN A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


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    PDF MSM51C256 DIP/18 MSM51C256-10 EZ613 MSM51C256RS

    MSM51C256A

    Abstract: msm51c256
    Text: O K I Semiconductor MSM51C256A 262,144-Word x 1 - B it DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organizedas262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI'sCOMSsilicongate process technology. The device operates at a single 5V power supply. Its I/O pins are TTL compatible.


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    PDF MSM51C256A 144-Word MSM51C256A msm51c256

    M51C464A

    Abstract: 51C464A-10 MSM51C464A70RS 51c464 MSM51C464A-70RS
    Text: O K I semiconductor MSM51C464A 65,536-W ord x 4-B it DYN A M IC RAM GENERAL DESCRIPTION T he M S M 51C 464A is a new generation dynam ic RAM organized as 65.536-w ord x 4-bit. The technology used to fabricate the M S M 51C 464A is O K I’s C M O S silicon gate process tech nol­


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    PDF MSM51C464A 536-w MSM51C464A MSM51C464AI M51C464A 51C464A-10 MSM51C464A70RS 51c464 MSM51C464A-70RS

    Untitled

    Abstract: No abstract text available
    Text: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.


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    PDF b72424D MSM51C256_ MSM51C256 DIP/18 MSM51C256-80 MSM51C256-10

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C 262 _ High Performance Low Power 64K x 4 Multi-port Memory with Fast Page Mode G EN ER A L DESCRIPTION The OKI MSM51C262 is a high speed 65,536x4-bit multiport CMOS dynamic memory. The tw o ports, random access and serial access, are configured to offer optim um flexibility in graphics


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    PDF MSM51C MSM51C262 536x4-bit

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM51C256_ 262,144 WORD X1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The


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    PDF MSM51C256_ MSM51C256 DIP/18 MSM51C256-80 MSM51C256-10

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb


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    PDF MSC2320B-XXYS9/DS9 144-Word 36-Bit MSC2320B-xxYS9/DS9 MSM514256B) 256Kb MSM51C256A) 72pin

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight


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    PDF MSC2321 8/DS18 288-Word 36-Bit SC2321B-xxYS18/D 288-w MSM514256B) 256-Kb MSM51C256A)

    MSC2331A-80YS3

    Abstract: MSC2331A-XX BS55 EPOXY
    Text: 4bE D OKI s o m l c o n c • k b?24240 j c t o □DDc bb4 5 1 3 H O K I J r MSC2331A-XX YS3/KS3 r- 262, 144 BY 9 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION O K I SEMICONDUCTOR GROUP The Oki MSC2331A-XX YS3/KS3 is a fully decoded, 262,144 words X 9 bit CMOS dynamic random


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    PDF 2424Q msc2331a-xx MSC2331 MSM514256AJS) 256Kb MSM51C256JS) MSM514256AJS; 2424G MSC2331A-80YS3 BS55 EPOXY