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    Mersen Electrical Power 1MSC103 (ALTERNATE: L1014195)

    Fuseholder, Modular Semiconductor, AI Box, 3/8" Bolt, 200kA, 600V, 400A | Mersen 1MSC103
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    RS 1MSC103 (ALTERNATE: L1014195) Bulk 2 40 Weeks 1
    • 1 $240.53
    • 10 $228.5
    • 100 $216.48
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    MISCELLANEOUS 0HMSC1032R12

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    Bisco Industries 0HMSC1032R12 256
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    KEMET Corporation UALSC1030J0000

    Common Mode Chokes / Filters 250V 10A 3mH
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    TTI UALSC1030J0000 Box 270 10
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    • 10 $4.99
    • 100 $4.25
    • 1000 $3.96
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    Ametherm Inc MSC103J-TR

    NTC Thermistors
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    Ametherm Inc MSC103J

    NTC Thermistors
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    MSC103 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSC1035M Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    MSC1035M Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MSC103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSC1035M

    Abstract: TACAN A 107 transistor TACAN transistor
    Text: MSC1035M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC1035M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 3 1 2 FEATURES: • Class C Operation • PG = 10.7 dB at 35 W/1150 MHz • Omnigold Metalization System


    Original     		PDF MSC1035M MSC1035M TACAN A 107 transistor TACAN transistor

    1N6815

    Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6815 MSASC25H45K) 1N6815) 1N6815R) 1N6815R MSASC25H45KR) MSC1032A 1N6815 1N6815R MSASC25H45K MSASC25H45KR MSC1032

    MSASC150

    Abstract: MSASC150W45LR 1N6822 1N6822R IR100 MSASC150W45L VF10 VF11 VF13 IR125
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6822 (MSASC150W45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6822 MSASC150W45L) 1N6822) 1N6822R) MSASC150W45LR) MSASC150 MSASC150W45LR 1N6822 1N6822R IR100 MSASC150W45L VF10 VF11 VF13 IR125

    1N6819

    Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6819 MSASC75W45F) 1N6819) 1N6819R) MSASC75W45FR) 1N6819 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


    Original     		PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    Untitled

    Abstract: No abstract text available
    Text: 18/11/2013 Miniature Thermistors Mini-Sensor Search Products Applications Industries Partners Support About Us You are here: Home > Products > NTC Thermistor Elements > Miniature Thermistors (Mini-Sensor) Special Applications Hermetically Sealed, Glass Encapsulated Style


    Original     		PDF DO-35) com/category-s/47

    S068

    Abstract: 81035m MSC1035M MSC81035M
    Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


    Original     		PDF MSC81035M 81035M MSC81035M MSC1035M. S068 81035m MSC1035M

    vf17

    Abstract: IR100 MSARS200S10L MSARS200S10LR VF10 VF11 VF12
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSARS200S10L MSARS200S10LR Features • • • • passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package


    Original     		PDF MSARS200S10L MSARS200S10LR MSARS200S10L) MSARS200S10RL) MSC1037A vf17 IR100 MSARS200S10L MSARS200S10LR VF10 VF11 VF12

    81035M

    Abstract: MSC81035M MSC1035M MSC1035
    Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


    Original     		PDF MSC81035M 81035M MSC81035M MSC1035M. 81035M MSC1035M MSC1035

    MSASC25W100KV

    Abstract: MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11
    Text: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6817 MSASC25W100K) 1N6817R 1N6817) 1N6817R) MSASC25W100KV) MSASC25W100KS) MSASC25W100KR) oth17R MSASC25W100KV MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11

    MSC1038

    Abstract: MSATS14S40L MSATS14S40LR
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSATS14S40L MSATS14S40L PRELIMINARY 40 Volts 250 Amps 14.5KW Features • • • • • Very High Surge Rating - 14,500 Watts peak power Hermetically sealed, low profile ceramic surface mount power package


    Original     		PDF MSATS14S40L MSATS14S40L) MSATS14S40LR) MSC1038A MSC1038 MSATS14S40L MSATS14S40LR

    MSC1035MP

    Abstract: MSC81035MP
    Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


    Original     		PDF MSC81035MP 81035MP MSC81035MP MSC1035MP. MSC1035MP

    MSASC25W100KV

    Abstract: MSASC25W100K MSASC25W100KR PS11 ir125
    Text: 8700 E. Thomas Road Scottsdale, AZ 85252 PH: 480 941-6300 FAX: (480) 941-1503 MSASC25W100K MSASC25W100KR Features • • • • • • • • • Platinum schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability


    Original     		PDF MSASC25W100K MSASC25W100KR MSASC25W100K) MSASC25W100KR) MSASC25W100KV) MSASC25W100KS) IR125 MSC1034F MSASC25W100KV MSASC25W100K MSASC25W100KR PS11 ir125

    ICR18650 battery

    Abstract: ICR-18650 icr18650 NICD charger 18V CD4060 NICD charger 18V CD4060 datasheet CD4060 timer IC charger schematic 12V CD4060 BUZ11 in electronic pulse schematic LSC series Microcontroller by MOTOROLA panasonic 18650
    Text: Application Note 68 December 1996 LT1510 Design Manual Applications Engineering Staff INTRODUCTION The ever-growing popularity of portable equipment in recent years has pushed battery technologists to search for battery types that store more energy in a smaller


    Original     		PDF LT1510 1N914 1000pF LMC555 MTP50N06E MPS2222 AN68-36 95035-7417q 434-0507q ICR18650 battery ICR-18650 icr18650 NICD charger 18V CD4060 NICD charger 18V CD4060 datasheet CD4060 timer IC charger schematic 12V CD4060 BUZ11 in electronic pulse schematic LSC series Microcontroller by MOTOROLA panasonic 18650

    CMS223M

    Abstract: CMS142M CMS143M W305022F CMS221 CMS223 CMS101I CMS141M CMS222M T236825A
    Text: Modulostar Modulostar CMS8 Size CCD configurations 8 x 31,5 8 x 31,5 8 x 31,5 8 x 31,5 8 x 31,5 8 x 31,5 8 x 31,5 1 1+N 2 3 3+N 4 N* Cat. number Ref.number w/o indicator light CMS81 CMS81N CMS82 CMS83 CMS83N CMS84 CMS810N Cat. number Ref.number with indicator light


    Original     		PDF CMS81 CMS81N CMS82 CMS83 CMS83N CMS84 CMS810N CMS81I CMS81NI CMS82I CMS223M CMS142M CMS143M W305022F CMS221 CMS223 CMS101I CMS141M CMS222M T236825A

    594 ph

    Abstract: transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


    Original     		PDF 1N6821 MSASC150H45L) 1N6821) 1N6821R) MSASC150H45LR) msasc150h45 1N6821R 594 ph transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81035MP 81035MP MSC81035MP MSC1035MP.

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    ST CHN 510

    Abstract: chn 714 chn 725 CHN 725 diode CHN 520
    Text: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents


    OCR Scan     		PDF 1N6815 MSASC25H45K) 1N6815R 1N6815) 1N6815R) MSASC25H45KR) MSC1032A ST CHN 510 chn 714 chn 725 CHN 725 diode CHN 520

    Untitled

    Abstract: No abstract text available
    Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •


    OCR Scan     		PDF 2N3766 2N3740) 300jaS, MSC1039

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    Untitled

    Abstract: No abstract text available
    Text: 7 SGS-THOMSON . MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • R E FR AC TO R Y /G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ oo:1 VSWR CAPABILITY ■ ■ ■ ■ LOW THERM AL RESISTANCE INPUT M ATCHING O VER LA Y G EO M ETR Y M ETAL/C ER AM IC HERM ETIC PACKAGE


    OCR Scan     		PDF MSC81035MP MSC81035MP MSC1035MP.

    81035M

    Abstract: No abstract text available
    Text: fry SGS-THOMSON ^ 7# MSC81035M RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • ■ ■ ■ ■ ■ ■ . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED oo:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY


    OCR Scan     		PDF MSC81035M 81035M MSC81035M MSC1035M. LnCSh11 81035M

    MSC1036A

    Abstract: msasc150w45l
    Text: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 1N6822 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC150W45L) 1N6822R Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents


    OCR Scan     		PDF 1N6822 MSASC150W45L) 1N6822R 1N6822) 1N6822R) MSASC150W45LR) MSC1036A msasc150w45l