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    MSC1035 Search Results

    MSC1035 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSC1035M Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    MSC1035M Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MSC1035 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSC1035M

    Abstract: TACAN A 107 transistor TACAN transistor
    Text: MSC1035M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC1035M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 3 1 2 FEATURES: • Class C Operation • PG = 10.7 dB at 35 W/1150 MHz • Omnigold Metalization System


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    PDF MSC1035M MSC1035M TACAN A 107 transistor TACAN transistor

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


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    PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    S068

    Abstract: 81035m MSC1035M MSC81035M
    Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035M 81035M MSC81035M MSC1035M. S068 81035m MSC1035M

    81035M

    Abstract: MSC81035M MSC1035M MSC1035
    Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035M 81035M MSC81035M MSC1035M. 81035M MSC1035M MSC1035

    MSC1035MP

    Abstract: MSC81035MP
    Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035MP 81035MP MSC81035MP MSC1035MP. MSC1035MP

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


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    PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    594 ph

    Abstract: transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


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    PDF 1N6821 MSASC150H45L) 1N6821) 1N6821R) MSASC150H45LR) msasc150h45 1N6821R 594 ph transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100

    MSC81035MP

    Abstract: MSC1035MP 81035MP
    Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035MP 81035MP MSC81035MP MSC1035MP. MSC1035MP 81035MP

    81035m

    Abstract: MSC1035M MSC81035M
    Text: MSC81035M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035M 81035M MSC81035M MSC1035M. 81035m MSC1035M

    1N6821

    Abstract: 1N6821R IR100 MSASC150H45L MSASC150H45LR VF10 VF11
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


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    PDF 1N6821 MSASC150H45L) 1N6821) 1N6821R) MSASC150H45LR) msasc150h45 1N6821R 1N6821 1N6821R IR100 MSASC150H45L MSASC150H45LR VF10 VF11

    81035MP

    Abstract: MSC81035MP MSC1035MP MSC1035
    Text: MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 35 W MIN. WITH 10.7 dB GAIN


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    PDF MSC81035MP 81035MP MSC81035MP MSC1035MP. 81035MP MSC1035MP MSC1035

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE


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    PDF MSC81035MP 81035MP MSC81035MP MSC1035MP.

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    81035M

    Abstract: No abstract text available
    Text: fry SGS-THOMSON ^ 7# MSC81035M RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • ■ ■ ■ ■ ■ ■ . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED oo:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY


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    PDF MSC81035M 81035M MSC81035M MSC1035M. LnCSh11 81035M

    Untitled

    Abstract: No abstract text available
    Text: fZ 7 S G S - T H O M S O N * 7 / . KfflD» IIL IO T Ê S K i MSC81035M RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS i REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED . o o :1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT MATCHING


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    PDF MSC81035M 81035M MSC81035M MSC1035M.

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


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    PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram