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    MRFG35010NT1 Search Results

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    Rochester Electronics LLC MRFG35010NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35010NT1 Bulk 2,600 8
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    NXP Semiconductors MRFG35010NT1

    - Tape and Reel (Alt: MRFG35010NT1)
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    Avnet Americas MRFG35010NT1 Reel 4 Weeks 10
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    Freescale Semiconductor MRFG35010NT1

    RF S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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    Rochester Electronics MRFG35010NT1 2,600 1
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    MRFG35010NT1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRFG35010NT1 Freescale Semiconductor Rf Power Field Effect Transistor Original PDF
    MRFG35010NT1 Freescale Semiconductor 3.5GHZ 9W 12V PLC1.5N Original PDF

    MRFG35010NT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    transistor std 13007

    Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2

    transistor std 13007

    Abstract: 0944
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944

    100A100JP150X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X

    6 017 03 61

    Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20

    D55342M07B

    Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35010NT1 MRFG35010MT1 D55342M07B 100B102JP500X rick miller MRFG35010M LL-210 D55342M07

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1.

    A113

    Abstract: MRFG35010ANT1 MRFG35010NT1 100A100JP150X
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 A113 MRFG35010ANT1 MRFG35010NT1 100A100JP150X

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications