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    MRF6S21 Price and Stock

    NXP Semiconductors MRF6S21140HR5

    RF MOSFET LDMOS 28V NI880H
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    NXP Semiconductors MRF6S21140HR3

    RF MOSFET LDMOS 28V NI880H
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    NXP Semiconductors MRF6S21050LR3

    RF MOSFET LDMOS 28V NI400
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    NXP Semiconductors MRF6S21050LR5

    RF MOSFET LDMOS 28V NI400
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    NXP Semiconductors MRF6S21100HR3

    RF MOSFET LDMOS 28V NI780
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    MRF6S21 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF6S21050LR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF6S21050LR3 Freescale Semiconductor HV6 W-CDMA 11.5W NI400L Original PDF
    MRF6S21050LR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 11.5W NI-400 Original PDF
    MRF6S21050LSR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF6S21050LSR3 Freescale Semiconductor HV6 W-CDMA 11.5W NI400LS Original PDF
    MRF6S21050LSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 11.5W NI-400S Original PDF
    MRF6S21060MBR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 14W TO272-4 Original PDF
    MRF6S21060MR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 14W TO270-4 Original PDF
    MRF6S21060NBR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 14W TO272-4 Original PDF
    MRF6S21060NBR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF6S21060NBR1 Freescale Semiconductor 2170MHZ 14W TO272WB4N Original PDF
    MRF6S21060NR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 28V 14W TO270-4 Original PDF
    MRF6S21060NR1 Freescale Semiconductor 2170MHZ 14W TO270WB4N Original PDF
    MRF6S21060NR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF6S21100H Freescale Semiconductor MRF6S21100HR3 MRF6S21100HSR3 2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs Original PDF
    MRF6S21100HR3 Freescale Semiconductor HV6 23W W-CDMA NI780H Original PDF
    MRF6S21100HR3 Freescale Semiconductor 2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Original PDF
    MRF6S21100HR3 Motorola 2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Original PDF
    MRF6S21100HR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CHAN 28V 23W NI-780 Original PDF
    MRF6S21100HSR3 Freescale Semiconductor HV6 23W W-CDMA NI780HS Original PDF

    MRF6S21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668

    MRF6S21060N

    Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    NIPPON CAPACITORS

    Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3 NIPPON CAPACITORS p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HSR3

    MRF6S21060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 37ployees, MRF6S21060NR1 MRF6S21060N

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 5, 7/2005 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3

    A114

    Abstract: AN1955 JESD22 MRF6S21140HR3 MRF6S21140HSR3 465B
    Text: Freescale Semiconductor Technical Data MRF6S21140H/D Rev. 1, 11/2004 The RF MOSFET Line RF Power Field Effect Transistors MRF6S21140HR3 MRF6S21140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HR3 A114 AN1955 JESD22 MRF6S21140HSR3 465B

    ATC100B100BT500XT

    Abstract: No abstract text available
    Text: Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100N ATC100B100BT500XT

    atc100b102jt500xt

    Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 atc100b102jt500xt CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1 ipc 610 Class 3 100B4R7CW
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 ipc 610 Class 3 100B4R7CW

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H

    465B

    Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
    Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3

    MRF6S21060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N

    ATC100B100BT500XT

    Abstract: 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 J361 J527
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 J361 J527

    MRF6S21060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21100HR3 MRF6S21100HSR3

    j378

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 j378 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3

    1 L 0380 R

    Abstract: MRF6S21100H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 5, 7/2005 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H 1 L 0380 R