ATC100B100BT500XT Search Results

ATC100B100BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1	PDF
ATC100B100BT500XT Abstract: No abstract text available Text: Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100N ATC100B100BT500XT	PDF
IRL 1630 Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IRL 1630 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HSR3 MRF7S16150HR	PDF
ATC100B100BT500XT Abstract: 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 J361 J527 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 J361 J527	PDF
IrL 1540 N Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3	PDF
ATC100B100BT500XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT	PDF
j327 Abstract: J327 equivalent A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 j327 J327 equivalent A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1	PDF