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CRCW08051000FKTA Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987 Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC	Original	PDF	MHV5IC2215N MHV5IC2215NR2 MHV5IC2215NR2 CRCW08051000FKTA MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
atc100b102jt500xt Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 atc100b102jt500xt CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
MRF6S21100H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescales High Voltage 28 Volts LDMOS IC	Original	PDF	MHV5IC2215N MHV5IC2215NR2 MHV5IC2215NR2