CRCW08051000FKTA
Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC
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MHV5IC2215N
MHV5IC2215NR2
MHV5IC2215NR2
CRCW08051000FKTA
MHV5IC2215N
J088
TAJA105K035R
01145
A113
A114
A115
AN1955
AN1987
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atc100b102jt500xt
Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21100H
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100HR3
atc100b102jt500xt
CDR33BX104AKWY
ATC100B5R1JT500XT
CRCW08051000FKTA
ATC100B150JT500XT
MRF6S21100H
GX-0300-55
A114
A115
AN1955
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MRF6S21100H
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21100H
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100HR3
MRF6S21100H
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescales High Voltage 28 Volts LDMOS IC
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Original
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MHV5IC2215N
MHV5IC2215NR2
MHV5IC2215NR2
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