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    Untitled

    Abstract: No abstract text available
    Text: MR1812SB Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k¥ V(FM) Max.(V) Forward Voltage400mí @I(FM) (A) (Test Condition)80 @Temp. (øC) (Test Condition)150#


    Original     		PDF MR1812SB Current100 Voltage150 Voltage400mà Current15m

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor