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    MPSD03 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MPSD03 Micro Electronics High Voltage Transistors Scan PDF
    MPSD03 Micro Electronics Semiconductor Device Data Book Scan PDF
    MPS-D03 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MPSD03 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MPSD03 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MPSD03 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MPS-D03 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MPSD03 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPSD03 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPSD03 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPS-D03 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPS-D03 Unknown Cross Reference Datasheet Scan PDF
    MPSD03 Semico High Voltage Transistors Scan PDF
    MPSD03C Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MPSD03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


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    PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    MRF472

    Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293


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    PDF BSW43 BSX52 MMBT41ran MRF472 MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B

    TRANSISTOR 1003

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C


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    PDF G0G35t MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C MPSD06C MPSL01C MPSU45C TRANSISTOR 1003

    BFW45

    Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
    Text: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39


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    PDF BFR59 BFS89 BFS90 BFS91 BFT47 5000G BFT48 BFT49 BFW45 BFT57 BFT58

    TRANSISTOR 1003

    Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
    Text: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)


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    PDF MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C D33D26C D33D27C D33D29C D33D30C TRANSISTOR 1003 MPSU45 D16P1C D33D21C

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    2n2846

    Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
    Text: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:


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    PDF DMB101 2C2222A 2N696* 2N697 2N731 2N956 2N1420* 2N1613 2N1711 2N1959* 2n2846 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola MPS8092 2N4401 die 2n3116

    2SC1048

    Abstract: No abstract text available
    Text: High Voltage Transistors TYPE NO. CASE POLA­ RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+


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    PDF O-92A O-92B O-92B 2SC1048

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    MPSD03

    Abstract: MPS-D03 BURROUGHS nixie d53 pnp transistor MPS-D53 MPS-053 MPS05
    Text: MPS-D03 NPN MPS-D53 PNP SILICON C O M P L E M E N T A R Y S IL IC O N A N N U L A R COMPLEMENTARY SILICON TRANSISTORS T R A N S IS T O R S . . . designed fo r use in high voltage am plifier and driver applications. • Collector-E m itter Breakdown Voltage —


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    PDF MPS-D03 MPS-D53 CE-20V -----MPS-D53 MPS-053 MPSD03 BURROUGHS nixie d53 pnp transistor MPS-D53 MPS05

    BFW45

    Abstract: MPSD52 MPSD02 bfw44 2n5401 2N3114 BFX98 BFS89 BFS90 BFS91 BFT47
    Text: TYPE NO. P O L A R IT Y High Voltage Transistors CASE M A X IM U M R A T IN G S h fe 'c Cob V C E S A T V CE0 Pd (mW) 'c m • Im A I TO-39 TO-39 TO-39 580 800 800 100 100 100 300 140 80 25 30 40 V CER • (V ) min max 'c Im A ) VCE (V ) 50 10 10 max fT


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    PDF BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 T0-18 BFT58 BFW45 MPSD52 MPSD02 bfw44 2n5401 2N3114 BFX98

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    2N2540

    Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
    Text: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:


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    PDF 37T74 2C2222A DMB101 2N696* 2N697 2N731 2N1420* 2N1613 2N1711 2N1959* 2N2540 2N2846 2n5219 MPSD05 2N1959 2n3299

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TRANSISTOR 1003

    Abstract: ic 1003
    Text: AL LE GRO M I C R O S Y S T E M S 8514019 SPRAGUE. INC =53 D • 050433Ö S E M I C O N D S / ICS GQD3Sb7 1 *ALGR ^0 9 3D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C


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    PDF

    MPS006

    Abstract: No abstract text available
    Text: ALLE GR O M I C R O S Y S T E M S INC T3 8514 0 19 SPRAGUE, D • D 5 0 4 3 3 A 0 D D 3 S T S ô ■ ALGR SEMICONDS / ICS 93D 03592 T> PLAST1C-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at Tfl = 25°C DC Current Gain


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    PDF MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPS006

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    mpsa18

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device


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    PDF MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29