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    Motorola Semiconductor Products MPS3904RLRA

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    MPS3904RLRA Datasheets Context Search

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    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


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    PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    EQUIVALENT TRANSISTOR bc549c

    Abstract: BC550 equivalent table BC549B BC549B equivalent BC550C equivalent BC549C TRANSISTOR bc550 PIN bc549 equivalent BC549 CONNECTION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors BC549B,C NPN Silicon BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC549 BC550 Unit Collector – Emitter Voltage VCEO 30 45 Vdc Collector – Base Voltage VCBO 30 50 Vdc


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    PDF BC549B BC550B BC549 BC550 226AA) EQUIVALENT TRANSISTOR bc549c BC550 equivalent table BC549B equivalent BC550C equivalent BC549C TRANSISTOR bc550 PIN bc549 equivalent BC549 CONNECTION

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MPQ2369 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 14 1 CASE 646–06, STYLE 1 TO–116 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO


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    PDF MPQ2369

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBTA70LT1 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc


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    PDF MMBTA70LT1 236AB)

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    transistor 45 f 122

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


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    PDF OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 inch/4000 BCP53T1 transistor 45 f 122

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


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    PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    BC489A equivalent

    Abstract: BC489B equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors NPN Silicon BC489,A,B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 80 Vdc Emitter – Base Voltage


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    PDF BC489 226AA) 83NOT BC489A equivalent BC489B equivalent

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


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    PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


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    PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


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    PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


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    PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    P2d MARKING CODE

    Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage


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    PDF PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


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    PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


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    PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage


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    PDF MMPQ3467

    BC237

    Abstract: jedec package TO-226AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


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    PDF BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA

    SOD123

    Abstract: marking pa sot-363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO


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    PDF MMBT6427LT1 236AB) SOD123 marking pa sot-363

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon BF393 COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage


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    PDF BF393 226AA)

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


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    PDF DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


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    PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607