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    MOTOROLA TRANSISTOR NUMBER 18 Search Results

    MOTOROLA TRANSISTOR NUMBER 18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TRANSISTOR NUMBER 18 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


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    MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 PDF

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


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    MRF581 transistor 81 110 w 63 PDF

    MC33094DW

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control


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    MC33094 MC33094DW PDF

    ignition coil driver cross reference

    Abstract: motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW
    Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control


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    MC33094 ignition coil driver cross reference motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW PDF

    44n25

    Abstract: 4N28 opto 4N25 6 pin dip optoisolator tl7500 730A-04
    Text: MOTOROLA Jameco Part Number 144240 SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide


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    4N25/D 4N25/A, 4N25/D* 44n25 4N28 opto 4N25 6 pin dip optoisolator tl7500 730A-04 PDF

    automotive transistor coil ignition

    Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG
    Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control


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    MC33094 automotive transistor coil ignition SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG PDF

    H11AA1

    Abstract: 730A-04 h11aa2
    Text: Jameco Part Number 320434 MOTOROLA Order this document by H11AA1/D SEMICONDUCTOR TECHNICAL DATA H11AA1* H11AA2 H11AA3 H11AA4* GlobalOptoisolator 6-Pin DIP Optoisolators AC Input/Transistor Output [CTR = 20% Min] [CTR = 10% Min] The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–


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    H11AA1/D H11AA1, H11AA2, H11AA3, H11AA4 H11AA1/D* H11AA1 730A-04 h11aa2 PDF

    MTP8N45

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed


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    IRF340 MTP8N45 PDF

    irf 1962

    Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
    Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,


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    IRF840 IRF841 IRF842 IRF843 irf 1962 irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843 PDF

    MRF9331

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF340 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on» <d IRF340 400 V 0.55 n 10 A This TM O S Pow er FET is d esigned fo r h ig h volta g e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g re g u lators, co n ­


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    IRF340 PDF

    10205 transistor

    Abstract: JF18004
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS


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    MJE/MJF18004 O-220 MJF18004, AN1040. 10205 transistor JF18004 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for


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    MJE18009/D MJE/MJF18009 221D-02 E69369 2PHX33547C-1 JE18009/D PDF

    F18002

    Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS


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    MJE/MJF18002 O-220 O-220 MJF18002, 15to20 AN1040. F18002 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002 PDF

    flyback transformer construction

    Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France


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    AN4001/D MC44603 80-140Vrms 180-280Vrms 110Vrms 220Vrms MC44603. XM41-2447 flyback transformer construction THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS


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    MJE/MJF18206 AN1040. PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR


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    MJE18002/D MJE/MJF18002 221D-02 E69369 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS


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    MJE18206/D JF18206 MJE/MJF18206 221D-02 E69369 PDF

    orega transformer SMT4

    Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
    Text: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France


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    AN1669/D AN1669 MC44603 MC44603. orega transformer SMT4 MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer E-4215A orega transformer OREGA smt4 SMT4 former PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18204/D SEMICONDUCTOR TECHNICAL DATA M JE 18204 M JF18204 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS


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    MJE18204/D JF18204 MJE/MJF18204 221D-02 E69369 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for


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    MJE18009/D JF18009 MJE/MJF18009 221D-02 O-220 E69369 PDF

    JE182

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18204 M JF18204 Designer’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POW ER TRANSISTORS 5 A M PERES 1200 VOLTS 35 and 75 WATTS


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    MJE/MJF18204 O-220 AN1040. JE182 PDF

    Untitled

    Abstract: No abstract text available
    Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use


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    MJE/MJF18002 O-220 O-220 MJF18002, 21A-06 O-220AB 221D-01 221D-02. MJF18002 221D-02 PDF

    motorola 9100-11

    Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
    Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC


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    MC33120/D MC33120 motorola 9100-11 Battery Managements MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21 PDF