MC33094DW
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control
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MC33094
MC33094DW
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ignition coil driver cross reference
Abstract: motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW
Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control
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MC33094
ignition coil driver cross reference
motorola automotive transistor coil ignition
ignition coil npn power darlington
Triggered spark gap
hall effect sensor ignition
COIL IGNITION
motorola transistor ignition
MC33094DWR2
automotive ignition coil
MC33094DW
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44n25
Abstract: 4N28 opto 4N25 6 pin dip optoisolator tl7500 730A-04
Text: MOTOROLA Jameco Part Number 144240 SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
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4N25/D
4N25/A,
4N25/D*
44n25
4N28 opto
4N25 6 pin dip optoisolator
tl7500
730A-04
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automotive transistor coil ignition
Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG
Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control
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MC33094
automotive transistor coil ignition
SPARK GAP 350v
CR 109 IGNITION MODULE
zener diode A 36
motorola automotive transistor coil ignition
ignition coil driver cross reference
MCZ33094EG
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H11AA1
Abstract: 730A-04 h11aa2
Text: Jameco Part Number 320434 MOTOROLA Order this document by H11AA1/D SEMICONDUCTOR TECHNICAL DATA H11AA1* H11AA2 H11AA3 H11AA4* GlobalOptoisolator 6-Pin DIP Optoisolators AC Input/Transistor Output [CTR = 20% Min] [CTR = 10% Min] The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–
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H11AA1/D
H11AA1,
H11AA2,
H11AA3,
H11AA4
H11AA1/D*
H11AA1
730A-04
h11aa2
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orega transformer SMT4
Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
Text: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France
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AN1669/D
AN1669
MC44603
MC44603.
orega transformer SMT4
MC44603P
THOMSON B2 ferrite material
orega flyback transformers
orega flyback transformer
E-4215A
orega transformer
OREGA smt4
SMT4 former
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bf433
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.
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MRF681
bf433
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
baw 92
HP11606A
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
110T
MRF5812
SF-11N
transistor 81 110 w 63
MRF68
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transistor 81 110 w 63
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •
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MRF581
transistor 81 110 w 63
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MTP8N45
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed
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IRF340
MTP8N45
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irf 1962
Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,
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IRF840
IRF841
IRF842
IRF843
irf 1962
irf all transistor 840
Transistor 0235 IRF
transistor irf 840
IRF 840 MOSFET
IRF 840
transistor irf 647
MTP8N45
IRF843
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MRF9331
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF340 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on» <d IRF340 400 V 0.55 n 10 A This TM O S Pow er FET is d esigned fo r h ig h volta g e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g re g u lators, co n
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IRF340
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10205 transistor
Abstract: JF18004
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS
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MJE/MJF18004
O-220
MJF18004,
AN1040.
10205 transistor
JF18004
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for
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MJE18009/D
MJE/MJF18009
221D-02
E69369
2PHX33547C-1
JE18009/D
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MJE1800
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006* M JF 18006* Designer’s Data Sheet SWITCHMODE™ *MotoroJ* Pnhmd NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state-of-the-art die designed
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MJE/MJF18006
O-220
MJF18006,
E6936ing
AN1040.
MJE1800
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flyback transformer construction
Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France
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AN4001/D
MC44603
80-140Vrms
180-280Vrms
110Vrms
220Vrms
MC44603.
XM41-2447
flyback transformer construction
THOMSON B2 ferrite material
MOSFET IRF 540 AS A SWITCH
AN4001
orega transformer SMT4
E-4215A
Thomson capacitors lcc
28V to 110V transformer
c4460
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS
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MJE/MJF18206
AN1040.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR
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MJE18002/D
MJE/MJF18002
221D-02
E69369
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS
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MJE18206/D
JF18206
MJE/MJF18206
221D-02
E69369
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18204/D SEMICONDUCTOR TECHNICAL DATA M JE 18204 M JF18204 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS
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MJE18204/D
JF18204
MJE/MJF18204
221D-02
E69369
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for
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MJE18009/D
JF18009
MJE/MJF18009
221D-02
O-220
E69369
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JE182
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18204 M JF18204 Designer’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POW ER TRANSISTORS 5 A M PERES 1200 VOLTS 35 and 75 WATTS
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MJE/MJF18204
O-220
AN1040.
JE182
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Untitled
Abstract: No abstract text available
Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use
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MJE/MJF18002
O-220
O-220
MJF18002,
21A-06
O-220AB
221D-01
221D-02.
MJF18002
221D-02
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motorola 9100-11
Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC
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MC33120/D
MC33120
motorola 9100-11
Battery Managements
MC33120P
mjd41
rs 3060 cj
1N4002
MC33120FN
ST12
ST21
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