MOTOROLA MOSFET MFE Search Results

MOTOROLA MOSFET MFE Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

MOTOROLA MOSFET MFE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2P102 Abstract: 100125FC MMDFS2P102 MMDFS2P102R2 DFS2P dfs2p10 SIDED10 MARKING 1ED Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MM DFS2P10tiD DATA DesignerSTMData Sheet FETWTM MOSFET and Schott~ Rectifier The FETWM product family incorporates low RDS on , true logic level MOSFETS packaged with industy leading, low fomard drop, low leakage Schottky Barrier rectifiers	Original	DFS2P10tiD OUCHTONE602 81-M521 852-Z 2P102 100125FC MMDFS2P102 MMDFS2P102R2 DFS2P dfs2p10 SIDED10 MARKING 1ED	PDF
MFE990 Abstract: MFE960 MFE930 Text: MOTOROLA SC XSTRS/R F IME 0 § fc.3t.7S54 000^740 Ö \| MOTOROLA • SEMICONDUCTOR MFE930 MFE960 MFE990 TECHNICAL DATA 2.0 A M P E R E N -C H A N N EL E N H A N C EM EN T -M O D E T M O S FIELD-EFFECT T R A N SIST O R N -C H A N N E L T M O S FET These T M O S FETs are d esigned for high-speed sw itching appli	OCR Scan	MFE930 MFE960 MFE990 FE930 FE960 FE990 MFE930, 3b725Ji MFE990	PDF
MFE9200 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFE9200 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD EFFECT TRANSISTOR 200 VOLTS This T M O S FET is d e s ig n e d fo r h ig h -v o lta g e , h ig h -sp eed s w itc h ing a p p licatio n s such as line drivers, relay d rivers, C M O S logic,	OCR Scan	MFE9200 MFE9200	PDF
MPF910 Abstract: No abstract text available Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,	OCR Scan	MFE910 MPF910 MPF910	PDF
MFE960 Abstract: MFE990 mfe930 Text: MOTOROLA SEMICONDUCTOR MFE930 MFE960 MFE990 TECHNICAL DATA 2.0 A M P E R E N -C H AN N EL ENHAIMCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR N-CHANIMEL TM OS FET T h e s e T M O S F E T s a r e d e s i g n e d fo r h ig h - s p e e d s w i t c h i n g a p p l i	OCR Scan	MFE930 MFE960 MFE990 MFE930, MFE990	PDF
MT 6236 Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which	Original	MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener	PDF
1RFZ40 Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50 Text: MOTOROLA SC X S T R S /R IME D \| F b3b?2S4 Q O fl' iB n 1 \| J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained	OCR Scan	DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50	PDF
AN569 Abstract: MMDF6N03HD MMDF6N03HDR2 Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMDF6N03HD/D Box54W, 30H7G21W Ok7741846 AN569 MMDF6N03HD MMDF6N03HDR2	PDF
MI1600 Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl	PDF
MFE3003 Abstract: aade MFEC3003 Text: ~3M MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE^b3b725S DIODES/OPTO ODBfiQ4ti 4 \| ~ 34-C 3 8 0 4 6 r - FIELD-EFFECT TRANSISTORS DICE (continued) MFEC3003 DIE NO. LINE SOURCE — DFM115 This die provides performance equal to or better than that of	OCR Scan	b3b725S DFM115 MFEC3003 MFE3003 MFE3003 aade MFEC3003	PDF
MFE121 Abstract: MFE120 MFE122 T7210 Text: MOTORCLA SC XSTRS/R F 15E D \| b3fc.7a5M Q0afci7g0 1 [ MFE120 T~Z! , thru MFE122 CASE 20-03, STYLE 9 TO-72 TO-206AF M A X IM U M RATINGS Symbol Value VDS + 25 Vdc Drain Current >D 30 mAdc Total Device Dissipation @ T /\ - 25°C Derate above 25°C PD 300 1.7	OCR Scan	MFE120 MFE122 O-206AF) b3b7254 MFE120 MFE121 MFE122 T7210	PDF
MFE9200 Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E Text: MOTOROLA SC XSTRS/R IM E F D \| b3b?254 O O fl'ìB n 1 \| Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com	OCR Scan	DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
Untitled Abstract: No abstract text available Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R D E ~ \| h B b 7 a S 4 OOflEbb? □ "j- F 96D 82667 - T - D 2 / - iJ r MFE140 CASE 20-03, STYLE 9 TO-72 TO-206AF) M A X I M U M R A T IN G S Sym bol V alue U n it Drain -Source V oltage	OCR Scan	MFE140 O-206AF)	PDF

MPF102 JFET Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory	Original	AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet	PDF
arco 402 Abstract: JMC2951 SK1381 001H MFE140 SK138 185 6-140 Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOT OROLA SC CXSTRS/R D E ~ \| h B b 7 a S 4 OOflEbh? □ "J- F 96D 82667 D - r - 3 /- ajr MFE140 CASE 20-03, STYLE 9 TO-72 TQ-206AF) M A X IM U M R A T IN G S Symbol Value Unit Drain-Source Voltage Rating	OCR Scan	MFE140 O-206AF) 10/iAdc, 3b75s4 gdflet71 arco 402 JMC2951 SK1381 001H MFE140 SK138 185 6-140	PDF
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola	PDF
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE	PDF
MFE3002 Abstract: No abstract text available Text: M O T O R O L A SC -CDIODES/OPTO} 34 6 3 6 7 2 5 5 M O T O R O L A SC DE I b3ti7ESS 0 0 3 0 0 4 5 <DIODES/OPTO 34C S 1 38045 D T-jr-î-r RELD-EFFECT TRANSISTORS DICE continued) MFEC3002 die n o . LINE SOURCE — DFM114 This die provides performance equal to or better than that of	OCR Scan	DFM114 MFEC3002 MFE3002 MFE3002	PDF
10VDC Abstract: MAX584 2n4352 Text: M O T O R OL A SC XSTRS/R F 12E D \| b3b?2S4 G0flt?M3 T \| MFE823 CASE 22-03, STYLE 11 TO-18 TO-206AA M A X IM U M RATINGS Symbol Rating Value U nit • 25 Vdc Drain-Source Voltage Vos Drain-Gate Voltage Vd G ±10 Vdc Id 30 mAdc PD 300 1.71 T j. Tstg - 6 5 to +175	OCR Scan	MFE823 O-206AA) 2N4352 10VDC MAX584	PDF
UC3843 spice model Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613 Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,	Original	BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613	PDF
VN5000TNE Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M Text: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15	Original	S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM VN130SN3 VN5000TNE IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M	PDF
PF960 Abstract: D004 power ic pf990 Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li	OCR Scan	MPF930 MPF960 MPF990 MPF930, PF960 D004 power ic pf990	PDF
40673 MOSFET Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E	Original	BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET	PDF

MOTOROLA MOSFET MFE Search Results

MOTOROLA MOSFET MFE Result Highlights (5)

MOTOROLA MOSFET MFE Datasheets Context Search

2P102

MFE990

MFE9200

MPF910

MFE960

MT 6236

1RFZ40

AN569

MI1600

MFE3003

MFE121

MFE9200

IRFD1Z3 equivalent

Untitled

MPF102 JFET

arco 402

AN211A

2N3797

MFE3002

10VDC

UC3843 spice model

VN5000TNE

PF960

40673 MOSFET