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    MPF930 Search Results

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    MPF930 Price and Stock

    Motorola Semiconductor Products MPF930

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MPF930 41
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    Quest Components MPF930 140
    • 1 $0.495
    • 10 $0.495
    • 100 $0.33
    • 1000 $0.33
    • 10000 $0.33
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    MPF930 20
    • 1 $11.235
    • 10 $7.49
    • 100 $7.49
    • 1000 $7.49
    • 10000 $7.49
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    MPF930 8
    • 1 $2.8
    • 10 $2.1
    • 100 $2.1
    • 1000 $2.1
    • 10000 $2.1
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    Component Electronics, Inc MPF930 508
    • 1 $0.77
    • 10 $0.77
    • 100 $0.58
    • 1000 $0.5
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    MPF930 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPF930 Motorola FET Transistor, N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR Original PDF
    MPF930 Motorola TMOS Switching Original PDF
    MPF930 On Semiconductor Small Signal MOSFET 2 Amps, 35, 60, 90 Volts Original PDF
    MPF930 Motorola European Master Selection Guide 1986 Scan PDF
    MPF930 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MPF930 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MPF930 Unknown FET Data Book Scan PDF
    MPF930 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MPF930-D On Semiconductor Small Signal MOSFET 2 Amps, 35, 60, 90 Volts N-Cha Original PDF
    MPF930RLRE On Semiconductor TMOS Switching N-Channel Original PDF

    MPF930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPF930A

    Abstract: MPF930 MPF960 MPF990RLRA MPF990 MPF930 Transistor MPF960 equivalent MPF930RLRE MPF960RLRA MPF990RLRP
    Text: MPF930, MPF960, MPF990 Preferred Device Small Signal MOSFET 2 Amps, 35, 60, 90 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol MPF930 MPF960 MPF990 Unit Drain–Source Voltage VDS 35 60 90 Vdc Drain–Gate Voltage VDG 35 60 90 Vdc


    Original     		PDF MPF930, MPF960, MPF990 MPF930 MPF960 MPF930) MPF960) MPF990) r14525 MPF930A MPF930 MPF960 MPF990RLRA MPF990 MPF930 Transistor MPF960 equivalent MPF930RLRE MPF960RLRA MPF990RLRP

    MPF960 equivalent

    Abstract: BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60


    Original     		PDF MPF930 MPF960 MPF990 MPF990 226AE) MSC1621T1 MSC2404 MSD1819A MPF960 equivalent BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out

    MPF930

    Abstract: MPF960 MPF990
    Text: MPF930 TMOS Switching N−Channel — Enhancement MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain −Source Voltage VDS 35 60 90 Vdc Drain −Gate Voltage VDG 35 60 90 Vdc Gate−Source Voltage — Continuous — Non−repetitive tp ≤ 50 s


    Original     		PDF MPF930 MPF960 MPF990 O-226AE) MPF930/D MPF930 MPF960 MPF990

    Untitled

    Abstract: No abstract text available
    Text: Eu ^ami-donauctoi ^Product*., One. </ TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 1 SOURCE MAXIMUM RATINGS Rating Drain -Source Voltage Drain-Gate Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 u.s Symbol


    Original     		PDF MPF930 MPF960 MPF990 O-226AE)

    MPF960

    Abstract: MPF990 MPF930 motorola MPF990
    Text: MOTOROLA Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc


    Original     		PDF MPF930/D MPF930 MPF960 MPF990 226AE) MPF960 MPF990 MPF930 motorola MPF990

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		PDF MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12

    221D

    Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art


    Original     		PDF MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105

    18004D2

    Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
    Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar


    Original     		PDF MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package

    221D

    Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		PDF MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105

    BUL44

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies


    Original     		PDF BUL44 BUL44 r14525 BUL44/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		PDF BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    221D

    Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE18009/D MJE18009 MJF18009 MJE/MJF18009 E69369 MJE18009/D* 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105

    PF960

    Abstract: D004 power ic pf990
    Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li­


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF930, PF960 D004 power ic pf990

    F930

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 2 GATE V S \ 1 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rc e Voltage D r a in -G a te Voltage Symbol MPF930 MPF960 MPF990 Unit VdS 35 60 90 Vdc


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF930 MPF960 F930

    TO-226-AE

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc


    OCR Scan     		PDF MPF930 MPF960 MPF990 MPF990 O-226AE) GCH37S7 TO-226-AE

    motorola mpf990

    Abstract: No abstract text available
    Text: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)


    OCR Scan     		PDF MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF990 motorola mpf990

    F930

    Abstract: T12P MPF960 F990
    Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain


    OCR Scan     		PDF MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF930, MPF960, F930 T12P F990

    MPF3330

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20


    OCR Scan     		PDF b3b7554 MPF990 MPF930 MPF3330 O-226AA) 2N5460 MPF3330

    TP12N10

    Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection


    OCR Scan     		PDF MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211