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    MOTOROLA 720 TRANSISTOR Search Results

    MOTOROLA 720 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA 720 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mgy20n120d

    Abstract: IGBT 250 amp
    Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY20N120D/D MGY20N120D mgy20n120d IGBT 250 amp PDF

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		MGW12N120D/D MGW12N120D MGW12N120D PDF

    Transistor motorola 418

    Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		MGW12N120D/D MGW12N120D MGW12N120D/D* Transistor motorola 418 mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor PDF

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		MGW12N120D/D MGW12N120D MGW12N120D PDF

    340G-02

    Abstract: MGY20N120D
    Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY20N120D/D MGY20N120D 340G-02 MGY20N120D PDF

    mosfet amp ic

    Abstract: transistor motorola 236 MGY25N120D
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D/D* mosfet amp ic transistor motorola 236 MGY25N120D PDF

    NT 407 F MOSFET TRANSISTOR

    Abstract: transistor motorola 359 Motorola 720 transistor 740 MOSFET TRANSISTOR MGY20N120D 720 transistor transistor motorola 236
    Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY20N120D/D MGY20N120D MGY20N120D/D* NT 407 F MOSFET TRANSISTOR transistor motorola 359 Motorola 720 transistor 740 MOSFET TRANSISTOR MGY20N120D 720 transistor transistor motorola 236 PDF

    MGY25N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D PDF

    MGY25N120D

    Abstract: 340G-02
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D 340G-02 PDF

    mj 1504 transistor

    Abstract: mj 1504 scheme transistor mj 1504 of mj 1504 transistor MGV12N120D IGBT 0623 transistor k 208 Transistor motorola 418 IGBT g 0623 transistor motorola 322
    Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C


    Original     		MGV12N120D/D MGV12N120D MGV12N120D/D* mj 1504 transistor mj 1504 scheme transistor mj 1504 of mj 1504 transistor MGV12N120D IGBT 0623 transistor k 208 Transistor motorola 418 IGBT g 0623 transistor motorola 322 PDF

    MGW20N120

    Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA PDF

    transistor motorola 236

    Abstract: MGY25N120
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 PDF

    mj 1504 transistor

    Abstract: mj 1504 scheme transistor mj 1504 Transistor motorola 418 of mj 1504 transistor MGV12N120D IGBT 0623
    Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C


    Original     		MGV12N120D/D MGV12N120D MGV12N120D/D* mj 1504 transistor mj 1504 scheme transistor mj 1504 Transistor motorola 418 of mj 1504 transistor MGV12N120D IGBT 0623 PDF

    transistor d 1557

    Abstract: MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW12N120/D MGW12N120 MGW12N120/D* TransistorMGW12N120/D transistor d 1557 MGW12N120 PDF

    MGY25N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120 PDF

    transistor motorola 236

    Abstract: motorola transistor m 237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS


    OCR Scan     		GY25N120D transistor motorola 236 motorola transistor m 237 PDF

    tme 126

    Abstract: transistor TT 2442 MGW12N120D 3EML
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged


    Original     		MGW12N120D/D MGW12N120DID tme 126 transistor TT 2442 MGW12N120D 3EML PDF

    TO247AE

    Abstract: MGW12N120E 25C09
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		MGW12N120E/D MGW12N120E TO247AE MGW12N120E 25C09 PDF

    12n120

    Abstract: TO247AE
    Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan     		MGW12N 120/D MGW12N120/D 12n120 TO247AE PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode M GY20N120D Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 20 A @ 90°C 28 A @ 25 C 1200 VOLTS


    OCR Scan     		O-264 0E-05 0E-01 PDF

    12N120D

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT 8, DIODE IN TO-247 12 A @ 90°C 20 A @ 25°C


    OCR Scan     		O-247 12N120D PDF

    MGW20N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 MGW20N120 PDF

    motorola 039 31

    Abstract: MGW12N120 MGW12N
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N PDF

    motorola 039

    Abstract: MGW20N120
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 O-247 O-247 IGBTMGW20N120/D motorola 039 MGW20N120 PDF