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    MGW12N120E Search Results

    MGW12N120E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGW12N120E Motorola Enhancement-Mode Silicon Gate Original PDF
    MGW12N120E/D Motorola IGBT IN TO-47 12 A Original PDF

    MGW12N120E Datasheets Context Search

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    TO247AE

    Abstract: MGW12N120E 25C09
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGW12N120E/D MGW12N120E TO247AE MGW12N120E 25C09

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF MGW12N120E/D

    vq 123

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF O-247 125CC MGW12N120E vq 123