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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54402A Advance Information 4M x 1 CMOS Dynamic RAM Static Column The M C M 54402A is a 0.7n C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CM OS siiicon-gate process


    OCR Scan     		MCM54402A 4402A MCM54402A MOTOD010 ber--------------544Q2A MCM54402AN60 MCM54402AN70 MCM54402AN80 MCM54402AN60R2 PDF

    60L256

    Abstract: 60L256A
    Text: SEMICONDUCTOR TECHNICAL DATA Advance Information MCM60L256A-C 3 2 K x 8 Bit CM O S Static Random A ccess Memory F PACKAGE SOQ C A S E 761H Extended Temperature Range: - 4 0 to 8 5 °C The MCM60L256A-C is a 262,144 bit low-power static random access memory orga­


    OCR Scan     		MCM60L256A-C MCM60L256A-C 60L256A-C MOTOD010 MCM60L256AFC10 MCM60L256AFC10R2 60L256A-C 60L256 60L256A PDF

    36L100

    Abstract: No abstract text available
    Text: M OTOROLA • SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit Dynamic Random Access Memory Module The MCM36100 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400A DRAMs housed in standard


    OCR Scan     		MCM36100 72-lead MCM54400A 36L100 MCM36100AS70 MCM36100AS80 MCM36L100AS70 MCM36L100AS80 MCM36100ASG70 36L100 PDF

    Untitled

    Abstract: No abstract text available
    Text: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­


    OCR Scan     		40L100 72-lead 54400AN MCM40100 MCM40L100 ber--------------40100 MCM40100AS60 MCM40100AS70 PDF

    TFK 637

    Abstract: MCM60L256AFV10 TFK 105 60L25 60L256
    Text: SEMICONDUCTOR TECHNICAL DATA MCM60L256A-V Advance Information 32K x 8 Bit CMOS Static Random Access Memory F PACKAGE SOQ CASE 761H Extended Temperature Range: - 4 0 to 105°C The MCM60L256A-V is a 262,144 bit low-power static random access memory orga­ nized as 32,768 words of 8 bits, fabricated using silicon-gate CMOS technology. Static


    OCR Scan     		MCM60L256A-V MCM60L256A-V Number----------------60L256A MCM60L256AFV10 MCM60L256AFV10R2 MOTOD010 TFK 637 TFK 105 60L25 60L256 PDF

    MCM54100A-80

    Abstract: cm54100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54100A-C Advance Information 4M x 1 CMOS Dynamic RAM Page Mode T h e M C M 5 4 1 0 0 A -C is a 0 .7 |i C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m em o ry. It is o rg a n iz e d a s 4 ,1 9 4 ,3 0 4 o n e -b it w o rd s a n d fa b ric a te d w ith C M O S s iiic o n -g a te p ro ­


    OCR Scan     		MCM54100A-C MCM54100ANC70 MCM54100ANC80 54100ANC70R2 54100ANC80R2 MCM54100AZC70 MCM54100AZC80 MCM541OOA-C MOTOD010 MCM54100A-C MCM54100A-80 cm54100 PDF

    TAA 310A

    Abstract: W25Q MCM54101AZ80 DRAM nibble mode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54101A Advance Information 4M x 1 CMOS Dynamic RAM Nibble Mode The MCM54101A is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 4,194,304 one-bit words and fabricated with CMOS silicon-gate process


    OCR Scan     		MCM54101A MCM54101A CM54101AN60 CM54101AN70 MCM54101AN80 MCM54101AN60R2 MCM54101AN70R2 CM54101AN80R2 CM54101AZ60 TAA 310A W25Q MCM54101AZ80 DRAM nibble mode PDF

    514256A

    Abstract: MCM32256AS70
    Text: MU1UHULA • SEMICONDUCTOR TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T he M CM 32256 is an 8M dynam ic random access mem ory DRAM module organized as 262,144 x 32 bits. The module is a 72-lead single-in-line mem ory


    OCR Scan     		72-lead 14256A MCM32256AS70 MCM32256AS80 32L256 MCM32256ASG70 MCM32256ASG80 MCM32L256AS70 MCM32L256ASG70 514256A PDF

    A1HV

    Abstract: motorola sje
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36256 256K x 36 Bit Dynamic Random Access Memory Module S PACKAGE SIMM MODULE CASE 866-02 The MCM36256 is a 9M dynamic random access memory DRAM module organized as 262,144 x 36 bits. The module is a 72-lead single-in-line memory module


    OCR Scan     		MCM36256 72-lead MCM514256A 18-lead MCM36256S70 MCM36256S80 MCM36256SG70 MCM36256SG80 A1HV motorola sje PDF

    IC CD 4440 pin diagram

    Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate


    OCR Scan     		MCM44400 MCM4L4400 MOTOD010 4L4400 MCM44400N60 MCM44400N70 MCM44400N80 MCM4L4400N60 IC CD 4440 pin diagram GZ150 MCM4L4400-70 MCM44400N-60 PDF

    motorola 16M CMOS DRAM

    Abstract: mcm517400
    Text: • SEMICONDUCTOR TECHNICAL DATA MCM81600 MCM8L1600 Product Preview 16M x 8 Bit Dynamic Random Access Memory Module The MCM81600 is a dynamic random access memory DRAM module organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module


    OCR Scan     		MCM81600 MCM8L1600 30-lead MCM517400 MOTOD010 motorola 16M CMOS DRAM PDF

    MCM511001AZ80

    Abstract: CM511001 MCM511001AJ70 511001A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511001A 1 M x 1 C M O S D ynam ic R A M Nibble M o d e P PACKAGE 300 MIL PLASTIC CASE 707A The MCM511001A is a 1.0/* CMOS high-speed, dynam ic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated w ith CMOS silicon-gate process


    OCR Scan     		MCM511001A 300-mil 100-mil 511001AP70 MCM511001AP80 MCM511001AP10 MCM511001AJ70 MCM511001AZ80 CM511001 511001A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 4M x 8 Bit Dynamic Random Access Memory Module MCM84000 MCM8L4000 MCM84030 The M CM 84000 is a 32M dynam ic random access mem ory DRAM module organized as 4,194,304 x 8 bits. The m odule is a 30-lead single-in-line mem ory m odules (SIMM ) consisting of eight M C M 54100A DRAMs housed in a 20/26


    OCR Scan     		30-lead 4100A 8L4000 MCM84000AS60 MCM84000L60 MCM84000AS70 4000L70 MCM84000AS80 MCM84000L80 PDF

    Untitled

    Abstract: No abstract text available
    Text: IV I W I V f l I V k f l SEMICONDUCTOR TECHNICAL DATA MCM32800 Product Preview 8M x 32 Bit Dynamic Random Access Memory Module The MCM32800 is a dynamic random access memory DRAM module organized as 8,388,608 x 32 bits. The module is a 72-lead single-in-line memory module


    OCR Scan     		MCM32800 MCM32800 72-lead MCM517400 TTL-CompatibI/04 MOTOD010 MCM32800S60 MCM32800S70 PDF

    MCM54400AZ60

    Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process


    OCR Scan     		4400A MCM54400AN60 MCM54400AN70 MCM54400AN80 MCM5L4400AN60 MCM5L4400AN70 MCM5L4400AN80 MCM54400AN60R2 MCM54400AN70R2 MCM54400AZ60 mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 PDF

    414256

    Abstract: 414256 dram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM414256 MCM41L4256 256K x 4 CMOS Dynamic RAM Page Mode The M C M 414256 is a 1 .On CM OS high-speed, dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated with C M OS siiicon-gate process technology. Advanced circuit design and fine line processing provide high


    OCR Scan     		41L4256 MCM414256P70 MCM414256P80 MCM41L4256P70 MCM41L4256P80 MCM414256J70 MCM414256J80 MCM41L4256J70 MCM41L4256J80 MCM414256J70R2 414256 414256 dram PDF

    MCM81430S80

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in


    OCR Scan     		MCM81430 MCM8L1430 30-lead MCM54400AN 8L1430 MCM81430S6Û MCM81430S70 MCM81430S80 MCM8L1430S60 PDF

    MCM8

    Abstract: MCM81430S
    Text: m vs i v i ìv L n SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and MCM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) or 30-lead single-in-line packages (SIP)


    OCR Scan     		MCM81000 MCM8L1000 30-lead MCM511000A 8L1000 MCM81000AS70 MCM81000AS80 MCM8L1000AS70 MCM8 MCM81430S PDF

    MCM32130SH60

    Abstract: M5440 M54400 MCM32130-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The M CM 32130 is a 32M dynam ic random access m em ory DRAM module organized as 1,048,576 x 32 bits. The m odule is a 72-lead single-in-line m em ory


    OCR Scan     		72-lead M54400AN 54400AN 32L130 MCM32130SH60 MCM32130SH70 MCM32130SH80 MCM32130SHG60 MCM32130SHG70 MCM32130SHG80 M5440 M54400 MCM32130-70 PDF

    MCM514258AZ80

    Abstract: MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M CM 514258A 2 5 6 K x 4 C M O S Dynam ic R A M S tatic Column The MCM514258A is a 1.0/t CMOS high-speed, dynam ic random access m em ory. It is organized as 262,144 fo u r-b it w ords and fabricated w ith CMOS silicon-gate process tech­


    OCR Scan     		14258A MCM514258A 300-mil 100-mil 14258A Numbers-MCM514258AP70 MCM514257AP80 MCM514258AP10 MCM514258AZ80 MCM 2128 RAM MCM514258AZ70 MCM 2128 M514258A MCM5142S8A-70 PDF

    54400AN

    Abstract: No abstract text available
    Text: i v iv s i v n v u n • SEMICONDUCTOR TECHNICAL DATA MCM40200 MCM40L200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M CM 40200 and M C M 40L200 are 80M dynam ic random access m em ory DRAM m odules organized as 2,097,152 x 40 bits. The module is a double-sided


    OCR Scan     		40L200 72-lead 54400AN MCM40200 MCM40L200 MOTOD010 4QL200 MCM40200AS60 MCM40200AS70 PDF

    SC63594FN

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM72100 Product Preview 1M x 72 Bit Dynamic Random Access Memory Module TOP VIEW The MCM72100 is a dynamic random access memory DRAM module organized as 1,048,576 x 72 bits. The module is a 100-lead single-in-line memory module


    OCR Scan     		MCM72100 MCM72100 100-lead MCM54400AN SC63594FN 20-lead 10-bit dri21 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA MCM36800 Product Preview 8M x 36 Bit Dynamic Random Access Memory Module S PACKAGE S IM M M O D U L E T O P V IE W The MCM36800 is a dynamic random access memory DRAM module organized as 8,388,608 x 36 bits. The module is a 72-lead single-in-line memory module


    OCR Scan     		MCM36800 72-lead MCM517400 MCM54100AN MOTOD010 MCM36800S60 CM36800S70 CM36800S80 PDF

    M514256B

    Abstract: *m514256B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­


    OCR Scan     		514256B MCM514256B-MCM51L4256B MOTOD010 51L4256B MCM514256BJ60 MCM51L4256BJ60 MCM514256BJ60R2 MCM51L4256BJ60R2 M514256B *m514256B PDF