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    M3620

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications T h e M C M 36204 is a 72M dynam ic random a ccess m em ory D RAM m odule o rganized as 2,097,152 x 36 bits. T h e m odule is a double-sided 72-lead single-inline m em ory m odule (SIM M ) consisting of eighteen M C M 54400AN D RAM s


    OCR Scan     		PDF MCM36204 72-lead 54400AN MCM36204S60 MCM36204S70 MCM36204SG60 MCM36204SG70 M3620

    TP 3212 TRW

    Abstract: MCM54400A 3206m L1AA 54400AN70 54400AN
    Text: MO TO RO LA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM MCM54400A MCM5L4400A Fast Page Mode The MCM54400A is a 0.7|j CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process


    OCR Scan     		PDF MCM54400A 4400A 5L4400A 54400AN60 54400AN70 54400AN80 5L4400AN 5L4400AN80 TP 3212 TRW 3206m L1AA 54400AN

    Untitled

    Abstract: No abstract text available
    Text: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­


    OCR Scan     		PDF 40L100 72-lead 54400AN MCM40100 MCM40L100 ber--------------40100 MCM40100AS60 MCM40100AS70

    MCM32230SH60

    Abstract: MCM32230SH70 U0-U15
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM32230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random a ccess m em ory D RAM m odule organized as 2 ,097,152 x 32 bits. The m odule is a 72-lead double sided sin g le ­


    OCR Scan     		PDF MCM32230 72-lead 4400A 54400AN MCM32230SH60 MCM32230SH70 MCM32230SHG60 MCM32230SHG70 MCM32230SH70 U0-U15

    MCM32130SH60

    Abstract: M5440 M54400 MCM32130-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The M CM 32130 is a 32M dynam ic random access m em ory DRAM module organized as 1,048,576 x 32 bits. The m odule is a 72-lead single-in-line m em ory


    OCR Scan     		PDF 72-lead M54400AN 54400AN 32L130 MCM32130SH60 MCM32130SH70 MCM32130SH80 MCM32130SHG60 MCM32130SHG70 MCM32130SHG80 M5440 M54400 MCM32130-70

    54400AN

    Abstract: No abstract text available
    Text: i v iv s i v n v u n • SEMICONDUCTOR TECHNICAL DATA MCM40200 MCM40L200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M CM 40200 and M C M 40L200 are 80M dynam ic random access m em ory DRAM m odules organized as 2,097,152 x 40 bits. The module is a double-sided


    OCR Scan     		PDF 40L200 72-lead 54400AN MCM40200 MCM40L200 MOTOD010 4QL200 MCM40200AS60 MCM40200AS70

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode, 3.3 V Power Supply The MCM54400A-V is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate


    OCR Scan     		PDF MCM54400A-V MCM54400A-V 4400A 54400ANV80 54400ANV80R2 54400ATV80 54400ATV80R2

    K2545

    Abstract: MCM54400A-C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1 M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The MCM54400A is a 0.7^ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS silicon-gate


    OCR Scan     		PDF MCM54400A-C MCM54400A MCM54400A-C 544Q0A-C 54400AN K2545

    9L14

    Abstract: MCM91430S70
    Text: iv iv s i u n u u M • SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91430 MCM9L1430 The M C M 91430 and M CM 9L1430 are 9M dynam ic random access mem ory DRAM m odules organized as 1,048,576 x 9 bits. The m odules are 30-lead single-in­


    OCR Scan     		PDF 9L1430 30-lead 54400AN 9L1430 MCM91430L60 MCM91430L70 MCM91430L80 MCM91430SC60 MCM91430SC70 9L14 MCM91430S70

    MCM54400A-C

    Abstract: 54400AN M54400
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The MCM54400A is a 0.7|i CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fo u r-b it words and fabricated with CMOS siiicon-gate


    OCR Scan     		PDF MCM54400A-C MCM54400A b3b7251 4400A 54400AN MCM54400A-C M54400

    CM32230

    Abstract: 32L230 3223-07
    Text: SEMICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random access mem ory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­ in-line m em ory module (SIM M) consisting of sixteen M C 54400AN DRAMs


    OCR Scan     		PDF 72-lead M54400AN 54400AN MCM32230SH60 MCM32230SH70 MCM32230SH80 MCM32L230SH60 MCM32L230SH70 MCM32L230SH80 32L230 CM32230 32L230 3223-07

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 is a 40M dynam ic random a ccess m em ory D RAM m odules o rganized as 1,048,576 x 4 0 bits. The m odule is a 72-lead single-in-line m em ory


    OCR Scan     		PDF MCM40100 72-lead 54400AN 4400A 40100AS60 40100AS70 40100ASG