2SK41
Abstract: k4114
Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)
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2SK4114
2SK41
k4114
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Untitled
Abstract: No abstract text available
Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)
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TK13H90A1
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tpc8406
Abstract: TPC8406-H
Text: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel/N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
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TPC8406-H
tpc8406
TPC8406-H
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k3564
Abstract: transistor K3564 K356 2SK35
Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)
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2SK3564
k3564
transistor K3564
K356
2SK35
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usb conector
Abstract: CP2102-GM cp2102gm SML-210MTT86 AD8220ARMZ ADM660ARZ ADR435ARZ TP10 SN74LVTH16373DGGR ADUC7026BSTZ62I
Text: 4 3 +3.3V TP2 P1 2 TP3 CS2 TP4 VS2 TP6 VS1 TP8 ST1 TP9 ST2 TP10 SCL1 TP11 SDA1 1 TP12 CLK TP13 MOSI TP14 MISO TP16 CS3 CS4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 D S1 S2 D S3 S4 CS2 VS2 VS1 ST1 ST2 SCL1 SDA1 CLK MOSI MISO CS3 CS4 TP5 TP7 AGND GND
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ADP1713AUJZ-3
ADM660ARZ
ADR435ARZ
AD8605
AD7685BRMZ
ADG708BRUZ
usb conector
CP2102-GM
cp2102gm
SML-210MTT86
AD8220ARMZ
ADM660ARZ
ADR435ARZ
TP10
SN74LVTH16373DGGR
ADUC7026BSTZ62I
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TPCP8001-H
Abstract: 8001H TOSHIBA
Text: TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCP8001-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching 5 0.475 1 4 B 0.05 M B
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TPCP8001-H
TPCP8001-H
8001H TOSHIBA
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M8001H
Abstract: TPCM8001-H M8001
Text: TPCM8001-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSIII TPCM8001-H ○ 高効率 DC/DC コンバータ用 ○ ノートブック PC 用 ○ 携帯電子機器用 スイッチングスピードが速い。 • ゲート入力電荷量が小さい。
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TPCM8001-H
M8001H
TPCM8001-H
M8001
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J681
Abstract: 2SJ681 tr j681
Text: 2SJ681 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ681 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 1.5±0.2 単位: mm 6.5±0.2 5.2±0.2 0.6 MAX.
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2SJ681
J681
2SJ681
tr j681
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TPC6003
Abstract: No abstract text available
Text: TPC6003 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPC6003 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 19mΩ (標準)
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TPC6003
TPC6003
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TPC8207
Abstract: A1930
Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPC8207
TPC8207
A1930
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toshiba f5d
Abstract: TPCF8304
Text: TPCF8304 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIV TPCF8304 ○ ノートブックPC用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 5.9S (標準)
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TPCF8304
toshiba f5d
TPCF8304
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TPCA8003-H
Abstract: No abstract text available
Text: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8003-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching • Small gate charge: QSW = 8.4 nC (typ.)
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TPCA8003-H
TPCA8003-H
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TPC8107 application circuit
Abstract: TPC8107 TPC8107 "pin compatible"
Text: TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
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TPC8107
TPC8107 application circuit
TPC8107
TPC8107 "pin compatible"
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LD33A
Abstract: YTFP153 uc 600
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - YTFP153 MOSI INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&0M AX . 0S.2ÌO.S V. DRIVE APPLICATIONS. iSL FEATURES:
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YTFP153
500nA
250uA
250ijA
-55M50
ID-20A
IDR-33A
IDR-33A
LD33A
YTFP153
uc 600
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1486 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 1 486 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 20.5MAX.
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OCR Scan
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2SK1486
20kfl)
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2SK858
Abstract: No abstract text available
Text: FIELD E F F E C T T R A N S IS T O R SILICO N N CH A N N EL M O S T Y P E ff-MOSii 2SK858 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 03.6±O .2 r1 0.3 MAX. - DRIVE APPLICATIONS.
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OCR Scan
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2SK858
300yA
00A/us
2SK858
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YTF640
Abstract: No abstract text available
Text: YTF640 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII I N DUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 0 .3 M AX. . ¡2 ¡3 .6 ± 0 .2 DRIVE APPLICATIONS. . L o w D r a i n - S o u r ce ON
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YTF640
250jiA
20kil)
00A/u
YTF640
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YTFP250
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:
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YTFP250
070fl
50ain
VDS-10V,
ID-16A
ID-16A
IDR-30A
YTFP250
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YTFP451
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:
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OCR Scan
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YTFP451
500nA
250uA
Ta-25
-55M50
VDS-25V,
ID-16A
VGS-10V
IDR-13A
YTFP451
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive
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2SK1382
15mil
20kil)
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2SK1333
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:
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OCR Scan
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2SK1333
2SK1333
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2-10P1B
Abstract: 2SK2608
Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)
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OCR Scan
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2SK2608
2-10P1B
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k1113
Abstract: 2SK111
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-7r-MOSin 2SK1113 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8 MAX. . 3 , 5.2±0.2 FEATURES : Í V
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OCR Scan
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2SK1113
100uA
20kfl)
k1113
2SK111
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yc 545
Abstract: 2SK678
Text: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance
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2SK678
100nA
300nA
20ki2)
yc 545
2SK678
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