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    2SK1382 Price and Stock

    Toshiba America Electronic Components 2SK1382(Q)

    Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-3PL
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    Chip1Stop 2SK1382(Q) 32
    • 1 $51
    • 10 $41.5
    • 100 $38.4
    • 1000 $38.4
    • 10000 $38.4
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    2SK1382 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1382 Toshiba TRANS MOSFET N-CH 100V 60A 3(2-21F1B) Original PDF
    2SK1382 Toshiba Original PDF
    2SK1382 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1382 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1382 Unknown FET Data Book Scan PDF
    2SK1382 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1382 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1382 Toshiba Silicon N channel field effect transistor for high speed switching applications, relay drive and motor drive applications, DC-DC converter applications Scan PDF
    2SK1382 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(LL-pi-MOSIII) Scan PDF
    2SK1382(Q) Toshiba 2SK1382 - MOSFET N-CH 100V 60A TO-3PL Original PDF

    2SK1382 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK1382 2-21F1B

    2SK1382

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance


    Original     		PDF 2SK1382 25transportation 2SK1382

    Untitled

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK1382

    2SK1382

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK1382 2SK1382

    2SK1382

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK1382 2SK1382

    Untitled

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK1382

    2SK1382

    Abstract: No abstract text available
    Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK1382 2SK1382

    2SK1382

    Abstract: No abstract text available
    Text: 2SK1382 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅢ 2SK1382 ○ DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 15 mΩ (標準) z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK1382 2-21F1B 2002/95/EC) 2SK1382

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive


    OCR Scan     		PDF 2SK1382 15mil 20kil)

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-M0SIII 2S K 1 3 8 2 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS U nit in mm 4-Volt Gate Drive


    OCR Scan     		PDF 2SK1382 --15mil l\/11 20kfl)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1382 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S TYPE L2-7t-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • U n it in mm


    OCR Scan     		PDF 2SK1382 20kil)

    transistor marking 47s

    Abstract: 2SK1382 60AS D100N TC320
    Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs | = 47S (Typ.)


    OCR Scan     		PDF 2SK1382 -15mO transistor marking 47s 2SK1382 60AS D100N TC320

    2SK1383

    Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
    Text: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)


    OCR Scan     		PDF 2SK1379 2SK1380 2SK1381 2SK1382 2SK1383 100nstyp 2SK1400 2SK1400A 155nstyp 2SK1383 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1384

    Untitled

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm INDUSTRIAL APPLIC ATIONS H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . Uni t R E L A Y D R IV E ,M O T O R DR IVE AND DC-DC CONVER TER A P P L I C A T I O N S . in mm


    OCR Scan     		PDF 15mfi D-30A

    2SK1649

    Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
    Text: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD


    OCR Scan     		PDF 2SK1078 2SK940 2SK1112 2SJ183 2SK1114 2SK1344 2SK1768 2SK1115 2SK1345 2SK942 2SK1649 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497