Si7501DN
Abstract: No abstract text available
Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET
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Si7501DN
07-mm
Si7501DN-T1--E3
S-32419--Rev.
24-Nov-03
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SI7501DN
Abstract: No abstract text available
Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET
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Si7501DN
07-mm
Si7501DN-T1--E3
S-51129--Rev.
13-Jun-05
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SI7501DN-T1-E3
Abstract: 72173 SI7501DN
Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET
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Si7501DN
07-mm
Si7501DN-T1--E3
S-51129--Rev.
13-Jun-05
SI7501DN-T1-E3
72173
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PDF
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Si7501DN
Abstract: No abstract text available
Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET
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Si7501DN
07-mm
Si7501DN-T1--E3
08-Apr-05
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Si7501DN
Abstract: si-7501 si7501dn-t1
Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel - 30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = - 10 V - 6.4 0.075 @ VGS = - 6 V - 5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET
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Si7501DN
07-mm
Si7501DN-T1
S-03722--Rev.
07-Apr-03
si-7501
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MDS9754
Abstract: 8v15
Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features N-Channel VDS = 40V ID = 6.1A @ VGS = 10V RDS ON <29mΩ @ VGS = 10V <37mΩ @ VGS = 4.5V The MDS9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in
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MDS9754
MDS9754
8v15
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MDD1653
Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state
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MDD1653
MDD1653
MDD*1653
mdd1653 MOSFET
MDD1653rh
MDD1653RP
MagnaChip Semiconductor Ltd. MDD1653
MagnaChip Semiconductor Ltd. MDD1653 rg
1E52
MDD165
MDD1653R
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0342F
Abstract: 82269 MagnaChip Semiconductor
Text: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state
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MDS1656
MDS1656
0342F
82269
MagnaChip Semiconductor
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MDF1752
Abstract: 220F
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDF1752
MDF1752
220F
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KI9410DY
Abstract: sop-8 smd type mosfet smd
Text: MOSFET SMD Type N-Channel 30-V D-S MOSFET KI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) D D D D ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) G S S N/C 1 8 D S 2 7 D S 3
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KI9410DY
KI9410DY
sop-8 smd type
mosfet smd
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MDI1752
Abstract: 40V50A 40V, 50A n mosfet 82269
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDI1752
MDI1752
40V50A
40V, 50A n mosfet
82269
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type N-Channel 30-V D-S MOSFET SI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G
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SI9410DY
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MDD1751
Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
Text: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in
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MDD1751
MDD1751
60V 60A TO-252 N-CHANNEL
40V 60A MOSFET
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MDE1751
Abstract: trench mosfet
Text: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in
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MDE1751
MDE1751
trench mosfet
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6903
Abstract: MDE1751
Text: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ Features General Description VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V The MDE1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in
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MDE1751
MDE1751
6903
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MDD1752
Abstract: MDD*1752 trench mosfet MDD1752R MAGNACHIP
Text: N-Channel Trench MOSFET 40V, 50A,8.0mΩ General Description Features The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDD1752
MDD1752
MDD*1752
trench mosfet
MDD1752R
MAGNACHIP
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IRFH8330
Abstract: mosfet J 3305
Text: PD - 97652C IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters
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97652C
IRFH8330PbF
IRFH8330
mosfet J 3305
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Untitled
Abstract: No abstract text available
Text: IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters
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IRFH8330PbF
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET
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Si7540DP
07-mm
500-kHz
S-21417â
12-Aug-02
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TS16949
Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA
Text: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to
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ZXMC3F31DN8
D-81541
TX75248,
TS16949
ZXMC3F31DN8
ZXMC3F31DN8TA
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Si7540DP
Abstract: DIODE TH 5 N
Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET
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Si7540DP
07-mm
500-kHz
S-22387--Rev.
16-Dec-02
DIODE TH 5 N
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Untitled
Abstract: No abstract text available
Text: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET
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Si4806DY
Si4806DY-T1
08-Apr-05
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET
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Si7540DP
07-mm
500-kHz
S-21193--Rev.
29-Jul-02
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TS16949
Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA
Text: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to
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Original
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ZXMC3F31DN8
D-81541
TX75248,
TS16949
ZXMC3F31DN8
ZXMC3F31DN8TA
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