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    MOSFET TRANSISTOR 800 VOLTS.300 AMPERES Search Results

    MOSFET TRANSISTOR 800 VOLTS.300 AMPERES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR 800 VOLTS.300 AMPERES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN569

    Abstract: MTP4N80E MTP4N80
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E MTP4N80 PDF

    AN569

    Abstract: MTY16N80E
    Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS


    Original     		MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E PDF

    AN569

    Abstract: MTP4N80E
    Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS


    Original     		MTP4N80E/D MTP4N80E MTP4N80E/D* AN569 MTP4N80E PDF

    MTW7N80E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM


    Original     		MTW7N80E/D O-247 MTW7N80E MTW7N80E/D* MTW7N80E PDF

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1 PDF

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1 PDF

    motorola mosfet MTP6N60E

    Abstract: MTP6N60E MTP6N6 AN569
    Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS


    Original     		MTP6N60E/D MTP6N60E motorola mosfet MTP6N60E MTP6N60E MTP6N6 AN569 PDF

    418C

    Abstract: AN569 MTB6N60E1
    Text: MOTOROLA Order this document by MTB6N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB6N60E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB6N60E1/D MTB6N60E1 418C AN569 MTB6N60E1 PDF

    MTP3N6

    Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		MTP3N60E/D MTP3N60E MTP3N6 MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR PDF

    pd 223

    Abstract: AN569 MTU20N40E motorola MOSFET 935
    Text: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination


    Original     		MTU20N40E/D MTU20N40E pd 223 AN569 MTU20N40E motorola MOSFET 935 PDF

    S 170 MOSFET TRANSISTOR

    Abstract: TB-547 TO247 package
    Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM


    Original     		MTW6N100E/D O-247 MTW6N100E MTW6N100E/D* TransistorMTW6N100E/D S 170 MOSFET TRANSISTOR TB-547 TO247 package PDF

    MTB4N80E

    Abstract: AN569 SMD310 824 mosfet
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB4N80E/D MTB4N80E MTB4N80E/D* MTB4N80E AN569 SMD310 824 mosfet PDF

    motorola an569 thermal

    Abstract: mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		MTB4N80E/D MTB4N80E/D MTB4N80E/D* motorola an569 thermal mosfet transistor 400 volts.100 amperes PDF

    mosfet transistor 400 volts.100 amperes

    Abstract: mtp2p
    Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate


    Original     		MTP2P50E/D MTP2P50E MTP2P50E/D mosfet transistor 400 volts.100 amperes mtp2p PDF

    AN569

    Abstract: MTP40N10E ad 152 transistor
    Text: MOTOROLA Order this document by MTP40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTP40N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0.04 OHM This advanced TMOS E–FET is designed to withstand high


    Original     		MTP40N10E/D MTP40N10E AN569 MTP40N10E ad 152 transistor PDF

    MTD1N80E

    Abstract: AN569 SMD310
    Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM


    Original     		MTD1N80E/D MTD1N80E MTD1N80E/D* MTD1N80E AN569 SMD310 PDF

    motorola 549 diode

    Abstract: diode Fr 10e AN569 MTB75N05HD
    Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB75N05HD/D MTB75N05HD motorola 549 diode diode Fr 10e AN569 MTB75N05HD PDF

    IRF540 motorola

    Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high


    Original     		IRF540/D IRF540 IRF540 motorola irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes PDF

    AN569

    Abstract: MTD1N80E SMD310
    Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTD1N80E/D MTD1N80E MTD1N80E/D* AN569 MTD1N80E SMD310 PDF

    AN569

    Abstract: MTW8N60E DSA00109376 ad 153 transistor
    Text: MOTOROLA Order this document by MTW8N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS on = 0.55 OHM


    Original     		MTW8N60E/D O-247 MTW8N60E MTW8N60E/D* AN569 MTW8N60E DSA00109376 ad 153 transistor PDF

    motorola MOSFET 935

    Abstract: pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Order this document by MTU18N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU18N50E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 18 AMPERES 500 VOLTS RDS on = 0.31 OHM This high voltage MOSFET uses an advanced termination


    Original     		MTU18N50E/D MTU18N50E motorola MOSFET 935 pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935 PDF

    AN569

    Abstract: MTY14N100E 340G
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G PDF

    UC3845BN USED CIRCUIT

    Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
    Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS


    Original     		MTP3N120E/D MTP3N120E UC3845BN USED CIRCUIT MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes PDF

    2N3904

    Abstract: AN569 MTP3N60E
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		MTP3N60E/D MTP3N60E MTP3N60E/D* 2N3904 AN569 MTP3N60E PDF