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    MTB4N80E1 Search Results

    MTB4N80E1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTB4N80E1 On Semiconductor TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead Original PDF
    MTB4N80E1 On Semiconductor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTB4N80E1/D On Semiconductor TMOS POWER FET 4.0 AMPERES 800 VOLTS Original PDF
    MTB4N80E1-D On Semiconductor TMOS E-FET High Energy Power FET D2PAK-SL Straight Original PDF

    MTB4N80E1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    418C

    Abstract: AN569 MTB4N80E1
    Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB4N80E1/D MTB4N80E1 418C AN569 MTB4N80E1

    FAG 29 diode

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB4N&0E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3-0 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTB4N80E1 418C-01 b3b72SS FAG 29 diode