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    MOSFET TO92 Search Results

    MOSFET TO92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    1N50C

    Abstract: FQN1N50C
    Text: FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQN1N50C FQN1N50C 1N50C

    Untitled

    Abstract: No abstract text available
    Text: FQNL2N50B N-Channel QFET MOSFET 500 V, 0.35 A, 5.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQNL2N50B FQNL2N50B O-92L

    VN0106N9

    Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106
    Text: Understanding MOSFET Data DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon.


    Original     		PDF AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0106N9 VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106

    transistor 2sk

    Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
    Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.


    Original     		PDF

    FQNL2N50BTA

    Abstract: No abstract text available
    Text: FQNL2N50B N-Channel QFET MOSFET 500 V, 0.35 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQNL2N50B O-92L FQNL2N50B FQNL2N50BTA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N65A 1N65A QW-R502-584

    1N60C

    Abstract: *1N60C
    Text: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQN1N60C 1N60C *1N60C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N70Z Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.


    Original     		PDF 1N70Z 1N70Z QW-R502-723

    12A 650V MOSFET

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N65A 1N65A QW-R502-584 12A 650V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N65A 1N65A QW-R502-584

    Untitled

    Abstract: No abstract text available
    Text: FQNL2N50B N-Channel QFET MOSFET 500 V, 0.35 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQNL2N50B O-92L FQNL2N50B

    power mosfet 600v

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged


    Original     		PDF 1N60P 1N60P QW-R502-634 power mosfet 600v

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 1N50K-TA Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		PDF 1N50K-TA 1N50K-TA QW-R205-048

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N60Z 1N60Z QW-R502-724

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N60Z 1N60Z QW-R502-724

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 1N50Z 1N50Z QW-R502-726

    marking 724 diode sot-363

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF 1N60Z 1N60Z QW-R502-724 marking 724 diode sot-363

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052 1n60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N50Z Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 1N50Z 1N50Z QW-R502-726

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    Transistor Arrays

    Abstract: transistor SST 126 IMD6 transistor 136 138 140
    Text: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD


    OCR Scan     		PDF ailable-------------------------------110 SFET----------------------------------112 T0-220FP O-247 OT-23) SC-59/Japemw PSIP12Pin. LF12Pin Transistor Arrays transistor SST 126 IMD6 transistor 136 138 140