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    MOSFET TO3 Search Results

    MOSFET TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


    Original     		PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    FDA70N20

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA70N20 FDA70N20

    Untitled

    Abstract: No abstract text available
    Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA16N50

    Untitled

    Abstract: No abstract text available
    Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA59N30

    Untitled

    Abstract: No abstract text available
    Text: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 88 mΩ (Typ.) @ VGS = 10 V, ID =16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA33N25

    Untitled

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description • RDS on = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA70N20

    Untitled

    Abstract: No abstract text available
    Text: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features Description • RDS on = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA24N50

    Untitled

    Abstract: No abstract text available
    Text: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA20N50

    Untitled

    Abstract: No abstract text available
    Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 mΩ Features Description • RDS on = 34 mΩ (Typ.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA69N25

    Untitled

    Abstract: No abstract text available
    Text: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA59N25

    Untitled

    Abstract: No abstract text available
    Text: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 88 mΩ (Typ.) @ VGS = 10 V, ID =16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA33N25

    t 3866 mosfet

    Abstract: No abstract text available
    Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA28N50 t 3866 mosfet

    Fda18n50

    Abstract: No abstract text available
    Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA18N50 Fda18n50

    Untitled

    Abstract: No abstract text available
    Text: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA38N30

    FDA18N50

    Abstract: No abstract text available
    Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA18N50 FDA18N50

    t 3866 mosfet

    Abstract: MOSFET 3866 s 61mH
    Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 m Features Description • RDS on = 122 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA28N50 FDA28N50 t 3866 mosfet MOSFET 3866 s 61mH

    FDA59N30

    Abstract: No abstract text available
    Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA59N30 FDA59N30

    ISD 1720

    Abstract: ON5040 FDA69N50
    Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 m Features Description • RDS on = 41 m (Max.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA69N25 FDA69N25 FDA69N50 ISD 1720 ON5040

    2sk3271

    Abstract: MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874
    Text: 2SK3271-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3P Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3271-01 2sk3271 MOSFET 20V 100A 2SK3271-01 100A Mosfet POWER MOSFET mosfet low vgs power mosfet low vgs 30V 50A mosfet N-Channel Silicon Power sd 3874

    FDA24N50

    Abstract: No abstract text available
    Text: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 m Features Description • RDS on = 160 m (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA24N50 FDA24N50

    FDA38N30

    Abstract: No abstract text available
    Text: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 m Features Description • RDS on = 70 m (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA38N30 FDA38N30

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65 12N65 QW-R502-583

    IRFF220

    Abstract: No abstract text available
    Text: IRFF220 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF220 O205AF) 11-Oct-02 IRFF220