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    onsemi FDA59N25

    MOSFET N-CH 250V 59A TO3PN
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    Fairchild Semiconductor Corporation FDA59N25

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    Component Electronics, Inc FDA59N25 11
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    FDA59N25 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDA59N25 Fairchild Semiconductor 250V N-Channel MOSFET Original PDF

    FDA59N25 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA59N25

    Untitled

    Abstract: No abstract text available
    Text: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA59N25

    FDA59N25

    Abstract: mosfet equivalent fda 59 n 30 mosfet fda 59 n 30
    Text: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDA59N25 FDA59N25 mosfet equivalent fda 59 n 30 mosfet fda 59 n 30

    FDA59N25

    Abstract: n-channel 250V power mosfet
    Text: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDA59N25 FDA59N25 n-channel 250V power mosfet

    fda59n25

    Abstract: No abstract text available
    Text: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 63 nC) • Low Crss (Typ. 70 pF) UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDA59N25 FDA59N25

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    FQPF8N60C equivalent

    Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent
    Text: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as


    Original     		PDF