"RF MOSFETs"
Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast
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IXZ308N120
175MHz
IXZ308N120
dsIXZ308N12
"RF MOSFETs"
"RF MOSFET"
731 MOSFET
mosfet 440 mhz
MOSFET RF POWER
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Untitled
Abstract: No abstract text available
Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast
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IXZ308N120
175MHz
IXZ308N120
dsIXZ308N12
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7404 not gate ic
Abstract: 7404 not gate 14 pin ic 7404 datasheet 14 pin ic 7404 not gate datasheet ic 7404 datasheet data sheet IC 7404 SLMA002 ic 7404 not gate datasheet PIC mosfet driver IC 7404 datasheets
Text: Technology for Innovators TM Power Management MOSFET Gate Drivers from Texas Instruments Includes: • Pin-Compatible Cross Reference to Industry Standard Drivers • MOSFET Driver Selection Guide • Digital Control Compatible Drivers • Complete MOSFET Driver
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A120905
SLUB005A
7404 not gate ic
7404 not gate
14 pin ic 7404 datasheet
14 pin ic 7404 not gate datasheet
ic 7404 datasheet
data sheet IC 7404
SLMA002
ic 7404 not gate datasheet
PIC mosfet driver
IC 7404 datasheets
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rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
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IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
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HUF75307D
Abstract: No abstract text available
Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology
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5V/75A/0
OT-223
O-251AA/252AA
O-220AB
HUF75345P3
HUF75343P3
HUF75339P3
HUF75337P3
HUF75333P3
O-262AA/263AB
HUF75307D
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Untitled
Abstract: No abstract text available
Text: FDP6670AS/FDB6670AS tm 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670AS/FDB6670AS
FDP6670AS
FDP6670AS/FDB6670AS
FDP6670A/FDB6670A
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MOSFET and parallel Schottky diode
Abstract: FDB6670AS FDP6670AS
Text: FDP6670AS/FDB6670AS tm 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670AS/FDB6670AS
FDP6670AS
FDP6670AS/FDB6670AS
FDP6670A/FDB6670A
MOSFET and parallel Schottky diode
FDB6670AS
FDP6670AS
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Untitled
Abstract: No abstract text available
Text: FDP6670AS/FDB6670AS tm 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670AS/FDB6670AS
FDP6670AS/FDB6670AS
FDP6670AS
FDP6670A/FDB6670A
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IXYS
Abstract: D600B
Text: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications
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IXZR16N60
IXZR16N60A/B
dsIXZR16N60
IXYS
D600B
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DL2M100N5
Abstract: dawin
Text: D W DAWIN Electronics TM DL2M100N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
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DL2M100N5
250nC
DL2M100N5
dawin
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DL2M50N5
Abstract: mosfet 500V 50A Mosfet 100V 50A
Text: D W DAWIN Electronics TM DL2M50N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
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DL2M50N5
150nC
DL2M50N5
mosfet 500V 50A
Mosfet 100V 50A
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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10mhz mosfet
Abstract: IRF7534D1 3A 300V Schottky Diode
Text: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5
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IRF7534D1
10mhz mosfet
IRF7534D1
3A 300V Schottky Diode
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Untitled
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance
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CPM2-1200-0025B
CPM2-1200-0025B
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Untitled
Abstract: No abstract text available
Text: IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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IRFH5250PbF
IRFH5250TRPbF
IRFH5250TR2PBF
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FDA70N20
Abstract: No abstract text available
Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA70N20
FDA70N20
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Untitled
Abstract: No abstract text available
Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching
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FDB15N50
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IRFH5250
Abstract: IRFH5250TRPBF
Text: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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-96265B
IRFH5250PbF
IRFH5250
IRFH5250TRPBF
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fdd7n25
Abstract: fdd7n25lz
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
FDD7N25LZ
fdd7n25
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Untitled
Abstract: No abstract text available
Text: FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features Description • RDS on = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides
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FDPF17N60NT
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Untitled
Abstract: No abstract text available
Text: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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-96265B
IRFH5250PbF
IRFH5250TRPBF
IRFH5250TR2PBF
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Untitled
Abstract: No abstract text available
Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP26N40
FDP26N40
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class d amplifier schematic hip4080
Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
class d amplifier schematic hip4080
HIP4080 amplifier circuit diagram class D
AN9404
AN9539
mosfet L 3055
1350P
AN9405
0-60V
MO-169AB
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Untitled
Abstract: No abstract text available
Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP75N08A
O-220
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