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    MOSFET SOT23-6 MARKING CODE Search Results

    MOSFET SOT23-6 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT23-6 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STR2P3LLH6 P-Channel 30 V, 0.04 Ω typ., 2 A STripFET VI DeepGATE™ Power MOSFET in SOT-23 package Datasheet - preliminary data Features 3 2 Order code VDS RDS on max ID STR2P3LLH6 30 V 0.06 Ω at 10 V 2A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on)


    Original     		PDF OT-23 OT-23 DocID024613

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    Untitled

    Abstract: No abstract text available
    Text: STR1P2UH7 P-channel 20 V, 0.075 Ω typ., 1.4 A STripFET VII DeepGATE™ Power MOSFET in a SOT-23 package Datasheet − target specification Features Order code VDS RDS on max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 V 1.4 A 3 • Ultra logic level 2 • Extremely low on-resistance RDS(on)


    Original     		PDF OT-23 OT-23 DocID025025

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TP0610K-T1-E

    Abstract: TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		PDF BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40

    Untitled

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    ST2300

    Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
    Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF ST2300 ST2300 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23

    VISHAY SOT LOT CODE

    Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 11-Mar-11 VISHAY SOT LOT CODE marking 6k sot-23 package sot23 footprint TP0610K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		PDF CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04

    smd diode marking Ja sot

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 smd diode marking Ja sot

    device marking code sot23-5 mosfet

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		PDF CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04 device marking code sot23-5 mosfet

    12V 30A 3 pin mosfet

    Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
    Text: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST2301A ST2301A OT-23 -20V/-2 OT-23 12V 30A 3 pin mosfet MARKING TR SOT23-3 P MOSFET MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A

    MOSFET TRANSISTOR SMD MARKING CODE

    Abstract: MOSFET marking smd
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 MOSFET TRANSISTOR SMD MARKING CODE MOSFET marking smd

    payi

    Abstract: TPS1110
    Text: TPS2816, TPS2817, TPS2818, TPS2819, TPS2828, TPS2829, SINGLEĆCHANNEL HIGHĆSPEED MOSFET DRIVER SLVS160C – FEBRUARY 1997 – REVISED OCTOBER 2002 D Low-Cost Single-Channel High-Speed D D D D D D D TPS2816, TPS2817 TPS2818, TPS2819 DBV PACKAGE TOP VIEW


    Original     		PDF TPS2816, TPS2817, TPS2818, TPS2819, TPS2828, TPS2829, SLVS160C TPS2817 payi TPS1110

    st9401

    Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
    Text: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST9401 ST9401 OT-23 -20V/-2 MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y

    ST9402

    Abstract: marking 31A sot-23 MOSFET N SOT-23 marking 31A sot MARKING CODE 16 transistor sot23 mosfet vgs 5v SOT23 sot-23 MARKING CODE 54 ST9402SRG 12 mosfet sot23
    Text: ST9402 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST9402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are


    Original     		PDF ST9402 ST9402 OT-23 OT-23 marking 31A sot-23 MOSFET N SOT-23 marking 31A sot MARKING CODE 16 transistor sot23 mosfet vgs 5v SOT23 sot-23 MARKING CODE 54 ST9402SRG 12 mosfet sot23

    ST2302

    Abstract: SOT23 marking 6A ST230 ST2302SRG marking 54 sot23 12 mosfet sot23
    Text: ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are


    Original     		PDF ST2302 ST2302 OT-23 OT-23 SOT23 marking 6A ST230 ST2302SRG marking 54 sot23 12 mosfet sot23

    marking 31A sot-23

    Abstract: SOT-23 MARKING 20A sot-23 MOSFET Marking code 6A ST2302D Power MOSFET N-Channel sot-23 N mosfet sot-23 MOSFET N SOT-23 MARKING CODE 16 transistor sot23 sot23 marking 6A diode sot-23 MARKING CODE NC
    Text: ST2302D N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION The ST2302D is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST2302D ST2302D OT-23 260m-ohm 450m-ohm marking 31A sot-23 SOT-23 MARKING 20A sot-23 MOSFET Marking code 6A Power MOSFET N-Channel sot-23 N mosfet sot-23 MOSFET N SOT-23 MARKING CODE 16 transistor sot23 sot23 marking 6A diode sot-23 MARKING CODE NC

    MOSFET P channel SOT-23

    Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
    Text: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST2301D ST2301D OT-23 -20V/-2 180m-ohm -20V/-1 360m-ohm MOSFET P channel SOT-23 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23

    MOSFET P channel SOT-23

    Abstract: MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005
    Text: ST2005SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2005SRG ST2005SRG OT-23 -20V/-3 40m-ohm OT-23 MOSFET P channel SOT-23 MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005

    ST2306SRG

    Abstract: MOSFET N SOT-23 Power MOSFET N-Channel sot-23 44m-ohm ST2306 32A marking sot-23 5A MARKING CODE SOT23 IDM-10
    Text: ST2306SRG N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2306SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2306SRG ST2306SRG OT-23 44m-ohm OT-23 MOSFET N SOT-23 Power MOSFET N-Channel sot-23 44m-ohm ST2306 32A marking sot-23 5A MARKING CODE SOT23 IDM-10

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE

    MOSFET MARKING 3F

    Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
    Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A BT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 BS817 BS850 MOSFET MARKING 3F sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23