F16N06
Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
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RFD16
N06SM)
O251AA,
O252AA)
RFD16N06,
RFD16N06SM
1e-30
07e-3
19e-7)
F16N06
N06 MOSFET
TO-252AA Package mos fet
*16N06
AN9321
RFD16N06
RFD16N06SM
RFD16N06SM9A
TB334
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bv42 transistor
Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
bv42 transistor
bv42
27e5
LM324
injector driver
33E10
marking n9 8-pin
PIN diode Pspice model
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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TC227
Abstract: No abstract text available
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
TC227
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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mosfet SPICE MODEL
Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET
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IRFP150N
Abstract: No abstract text available
Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,
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IRFP150N
O-247
IRFP150N
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AN7254
Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49086 RF1K4908696 pspice high frequency mosfet
Text: Power MOSFET Data Sheets RF1K49086 S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 3.5A, 30V The RF1K49086 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49086
RF1K49086
1e-30
74e-4
13e-6)
45e-7)
16e-3
16e-6)
AN7254
AN7260
AN9321
AN9322
MS-012AA
RF1K4908696
pspice high frequency mosfet
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8E-10
Abstract: FDM3300NZ TC146
Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDM3300NZ
2000v
8E-10
FDM3300NZ
TC146
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Untitled
Abstract: No abstract text available
Text: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8878
FDU8878
O-252
O-252)
O-251AA)
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FDU8896
Abstract: FDD8896
Text: FDD8896_F085 / FDU8896_F085 N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8896
FDU8896
O-252
O-252)
O-251AA)
F085/FDU8896
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irf530
Abstract: 929E-10 IRF530 fairchild
Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
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IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
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FDD8878
Abstract: No abstract text available
Text: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8878
FDU8878
O-251AA)
O-252
O-252)
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N2357D
Abstract: N2357
Text: ISL9N2357D3ST Data Sheet 30V, 0.007 Ohm, 35A, N-Channel DenseTrench Power MOSFET March 2001 File Number 4929.1 DenseTrench™ [ /Title DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance Features
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ISL9N2357D3ST
N2357
5600pF
N2357D
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65e9
Abstract: FDD8874 FDU8874
Text: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8874
FDU8874
O-252
O-252)
O-251AA)
65e9
FDU8874
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FDD8870
Abstract: FDU8870 m038
Text: FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 35A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-251AA)
O-252
O-252)
FDU8870
m038
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FDD8870
Abstract: FDU8870 M038 FDD8870-F085
Text: FDD8870_F085 / FDU8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-252
O-252)
O-251AA)
F085/FDU8870
M038
FDD8870-F085
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Untitled
Abstract: No abstract text available
Text: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8874
FDU8874
O-251AA)
O-252
O-252)
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Untitled
Abstract: No abstract text available
Text: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8874
FDU8874
O-252
O-252)
O-251AA)
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Untitled
Abstract: No abstract text available
Text: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8878
FDU8878
O-251AA)
O-252
O-252)
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67E-3
Abstract: FDD8874 FDU8874
Text: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1m Ω General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8874
FDU8874
O-251AA)
O-252
O-252)
67E-3
FDU8874
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Untitled
Abstract: No abstract text available
Text: FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8882
FDU8882
O-251AA)
O-252
O-252)
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75321p
Abstract: 75321S HUF75321 410E1
Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology
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HUF75321P3,
HUF75321S3,
HUF75321S3S
HUF75321
O-263AB
330mm
100mm
75321p
75321S
410E1
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Untitled
Abstract: No abstract text available
Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology
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HUF75321P3,
HUF75321S3,
HUF75321S3S
HUF75321
O-263AB
O-263AB
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