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    MOSFET P 3055 Search Results

    MOSFET P 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P 3055 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    X780

    Abstract: No abstract text available
    Text: JVKJÏXAJVK 19-0125; Rev. 0; 4/93 Dual-Slot PCMCIA Analog P o w er C ontroller The M A X 780A in c o rp o ra te s tw o 0 V /+ 5 V /+ 1 2 V /h ig h im p ed a n ce pow er outputs for flash Vpp program m ing, level shifters for pow er MOSFET control of two se p a ­


    OCR Scan     		AX780A AX780B 20-PIN X780 PDF

    3055E

    Abstract: D3055 atech
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is


    OCR Scan     		3055E Y145M. D3055 atech PDF

    3055vl

    Abstract: Motorola 3055vl 3055vl motorola
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This


    OCR Scan     		MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola PDF

    MTP3055EL

    Abstract: 3055el TP3055EL TP3055E
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 3055E L Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate T h is a d v a n c e d E-FET is a T M O S p o w e r M O S F E T d e s ig n e d to w ith s ta n d h ig h e n e rg y in


    OCR Scan     		3055E MTP3055EL 21A-04 TQ-220AB MTP3055EL 3055el TP3055EL TP3055E PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    Untitled

    Abstract: No abstract text available
    Text: LineAB TECHNOLOGY ltci255 Dua| 24V High-Side MOSFET Driver FCflTUfteS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1255 dual high-side driver allows using low cost N-channel FETs for high-side industrial and auto­ motive switching applications. An internal charge pump


    OCR Scan     		lti25 LTC1255 12jjA 1N4148 Z5242B BZ5242B LTC1255 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    class d amplifier schematic hip4080

    Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
    Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		AN9539 HIP2060, HIP2060 class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V MO-169AB PDF

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic PDF

    HIP4080 amplifier circuit diagram class D

    Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
    Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		AN9539 HIP2060, HIP2060 HIP4080 amplifier circuit diagram class D class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A PDF

    transistor c815

    Abstract: c815 transistor transistor D800 APW 7313 transistor c814 C817 C815 transistor apm3055 ut 803B core i5 MOTHERBOARD CIRCUIT diagram
    Text: APW3007 Advanced Dual PWM and Dual Linear Power Controller Features General Description • The APW3007 provides the power control and protection for four output voltage in high-performance microprocessor and computer applications. The APW3007 is designed to provide termination


    Original     		APW3007 APW3007 transistor c815 c815 transistor transistor D800 APW 7313 transistor c814 C817 C815 transistor apm3055 ut 803B core i5 MOTHERBOARD CIRCUIT diagram PDF

    t3055vl

    Abstract: T30-55VL MC33345
    Text: M MOTOROLA — — — M C33345 Product Preview Lithium B attery Protection Circuit for One to Four Cell B attery Packs The MC33345 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of one to four cell rechargeable


    OCR Scan     		C33345 MC33345 MC33345 t3055vl T30-55VL PDF

    F7822

    Abstract: bel 100p transistor pin configuration BEL 100p transistor EQUIVALENT diode d1n5819 BEL 100p transistor nx2601 2N3904 c24 ensw1 CON20B d1n5819
    Text: Evaluation board available. NX2601 DUAL SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER & 5V BIAS REGULATOR PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION The NX2601 controller IC is a triple controller with a dual channel synchronous Buck controller IC and an LDO controller designed for multiple converters such as PCIe


    Original     		NX2601 NX2601 200kHz 20REF 00BSC 50BSC F7822 bel 100p transistor pin configuration BEL 100p transistor EQUIVALENT diode d1n5819 BEL 100p transistor 2N3904 c24 ensw1 CON20B d1n5819 PDF

    MOTOROLA 3055V

    Abstract: 3055VL 3055V
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTD3055VL/D MOTOROLA 3055V 3055VL 3055V PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		SSD3055 O-252 SSD3055 30-Apr-2012 PDF

    4614 mosfet

    Abstract: MOTOROLA 3055V 3055VL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This


    OCR Scan     		0E-03 0E-02 0E-01 4614 mosfet MOTOROLA 3055V 3055VL PDF

    3055VL

    Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		MTD3055VL MTD3055VL O-252 3055VL a9hv transistor WT9 u6 transistor AYRA PDF

    mosfet L 3055 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET


    OCR Scan     		OT-223 MMFT3055E mosfet L 3055 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMS86150 PDF

    t3055vl

    Abstract: T30-55VL T3055V C33348
    Text: M m o to r o la M C33348 Product Preview Lithium B attery Protection Circuit for One Cell B attery Packs The M C33348 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of one cell rechargeable battery pack. Cell protection features consist of internally trimm ed charge


    OCR Scan     		C33348 C33348 t3055vl T30-55VL T3055V PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86150 FDMS86150 PDF

    TP3055E

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Advance Inform ation TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced " E " series o f TM O S p o w e r MOSFETs is designed to w ith s ta n d hig h ene rg y in th e avalanche and c o m m u ta tio n m odes. These n ew ene rg y e fficie n t devices


    OCR Scan     		MTP3055E TP3055E PDF

    mosfet L 3055 motorola

    Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
    Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		MMFT3055E/D MMFT3055E MMFT3055E/D* mosfet L 3055 motorola L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3 PDF