MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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Original
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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PDF
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MMFT3055E
Abstract: 2N3904 AN569 MMFT3055ET1 MMFT3055ET3
Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source
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Original
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MMFT3055E
OT-223
OT-223
MMFT3055E/D
MMFT3055E
2N3904
AN569
MMFT3055ET1
MMFT3055ET3
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PDF
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Untitled
Abstract: No abstract text available
Text: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source
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Original
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MMFT3055E
OT-223
OT-223
MMFT3055E/D
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PDF
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mosfet L 3055 motorola
Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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Original
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MMFT3055E/D
MMFT3055E
MMFT3055E/D*
mosfet L 3055 motorola
L 3055 motorola
mosfet L 3055
motorola 3055
3055 sot-223
2N3904
AN569
MMFT3055E
MMFT3055ET1
MMFT3055ET3
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PDF
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mosfet L 3055 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET
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OCR Scan
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OT-223
MMFT3055E
mosfet L 3055 motorola
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PDF
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mosfet L 3055 motorola
Abstract: FT3055E sot-223 body marking D K Q F
Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed
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OCR Scan
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FT3055ET1/D
OT-223
2PHX31317F-0
MMFT3055ET1/D
mosfet L 3055 motorola
FT3055E
sot-223 body marking D K Q F
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA M edium Pow er Field E ffect Transistor MMFT3055E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S M edium Power M OSFET
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OCR Scan
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MMFT3055E/D
MMFT3055E
OT-223
318E-04
O-261AA
OT-223
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