VN0106N9
Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106
Text: Understanding MOSFET Data DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon.
|
Original
|
AN-D15
VN0104/VN0106/VN0109
VN0104
VN0106
VN0109
VN0106N9
VN0109N5
VN0106N5
VN0106N2
VN0104N5
VN0104N2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V
N-Channel Depletion-Mode MOSFET high voltage
VN0106N6
VN0106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U
|
Original
|
300MB075
300MB075
|
PDF
|
IRLML6401TRPBF
Abstract: FTS6000 IR2153PBF irf7530 Top View micro-8 m4820 4864 so8
Text: PD - 95335C IRF7413ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance
|
Original
|
95335C
IRF7413ZPbF
IRF740SPBF,
IRFR3707ZPBF,
IRLL2705PBF
IRF4905PBF
O-220)
IRFP450PBF
O-247)
IRF740SPBF
IRLML6401TRPBF
FTS6000
IR2153PBF
irf7530
Top View micro-8
m4820
4864 so8
|
PDF
|
SPM5N-023
Abstract: 3phase MOSFET INVERTER
Text: FSB50250UTD Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 4.2 Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs Applications FSB50250UTD is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology
|
Original
|
FSB50250UTD
SPM5N-023
3phase MOSFET INVERTER
|
PDF
|
5252 F mosfet
Abstract: TLP220
Text: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series
|
Original
|
TLP220
TLP227G
TLP222G,
TLP592G,
TLP172G
TLP192G)
TLP222G-2,
TLP202G)
5252 F mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPM FSB50250 TM Smart Power Module Features General Description • 500V 2.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50250 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small
|
Original
|
FSB50250
FSB50250
|
PDF
|
FSB50325
Abstract: No abstract text available
Text: SPM FSB50325 TM Smart Power Module Features General Description • 250V 3.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50325 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small
|
Original
|
FSB50325
FSB50325
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 5A MOSFET N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor
|
Original
|
PSM05S93E5-A
240Vrms
|
PDF
|
Mitsubishi dipipm application
Abstract: No abstract text available
Text: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 5A MOSFET N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor
|
Original
|
PSM05S93E5-A
240Vrms
Mitsubishi dipipm application
|
PDF
|
denso
Abstract: No abstract text available
Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 3A MOSFET N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor
|
Original
|
PSM03S93E5-A
240Vrms
denso
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPM FSB50450 TM Smart Power Module Features General Description • 500V 3.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50450 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small
|
Original
|
FSB50450
FSB50450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 3A MOSFET N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor
|
Original
|
PSM03S93E5-A
240Vrms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSB50450 Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 2.4Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450 is a Motion SPM5 Series Based on FastRecovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor Drive
|
Original
|
FSB50450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSB50450US Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 2.4 Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450US is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor
|
Original
|
FSB50450US
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FSB50250AS Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
|
Original
|
FSB50250AS
FSB50250AS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSB50450A Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450A is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
|
Original
|
FSB50450A
FSB50450A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSB50450AS Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small
|
Original
|
FSB50450AS
FSB50450AS
|
PDF
|
SPM5Q-023
Abstract: FSB50825A
Text: FSB50825AS Motion SPM 5 FRFET® Series Features General Description • 250 V RDS on = 0.45 Ω(Max) FRFET MOSFET 3Phase Inverter Including HVICs FSB50825AS is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor
|
Original
|
FSB50825AS
SPM5Q-023
FSB50825A
|
PDF
|
aajf
Abstract: 2SK2473-01 20KC2
Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q I i ± / N 7 —M OSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er
|
OCR Scan
|
00V/20A/0
2SK2473-01
20kC2
aajf
2SK2473-01
20KC2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q Ii± /W —MOSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er
|
OCR Scan
|
2SK2473-01
111iw
13dS01AI-Â
|
PDF
|
CA3130S
Abstract: avo meter schematic diagram picoammeter schematic diagram CA3160E N6385 CA3160AS staircase generator circuit CA3160 CA3160AT at11V
Text: HARRIS SEHICON] SECTOR blE D • i»302B71 004fcj312 «HAS CA3160 HARRIS SEMICONDUCTOR M ■ ff BiMOS Operational Amplifiers with MOSFET Input/CMOS Output March1993 Features Description • MOSFET Input Stage Provides: - Very High Z |« 1.5TA 1.5 x 101iQ) (Typ.)
|
OCR Scan
|
302B71
DD4b312
CA3160
15x1012n)
CA3600
CA3160.
CA3600E
190kHz.
Aa20dB
CA3130S
avo meter schematic diagram
picoammeter schematic diagram
CA3160E
N6385
CA3160AS
staircase generator circuit
CA3160AT
at11V
|
PDF
|
mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
|
OCR Scan
|
100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
|
PDF
|
CA3260T
Abstract: No abstract text available
Text: & CA3260 BiMOS Operational Amplifier with MOSFET Input/CMOS Output Features Description • MOSFET Input Stage provides - Very High Z, - 1.5TO 1.5 x 1012fl Typ. - Very Low l( = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation CA3260A and CA3260 are integrated circuit operational
|
OCR Scan
|
arch1993
1012fl)
CA3260
CA3260A
CA3260
CA3160
10kil
CA3260,
CA3260A
CA3260T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UFND220 UFND223 POWER MOSFET TRANSISTORS 2 00 Volt 0 .8 Ohm N-Channel FEATURES DESCRIPTION • • • • • • • The Unitrode pow er MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rqsioni an^ a high transconductance.
|
OCR Scan
|
UFND220
UFND223
UFND220,
|
PDF
|