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    MOSFET NW Search Results

    MOSFET NW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET NW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VN0106N9

    Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106
    Text: Understanding MOSFET Data DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon.


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    AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0106N9 VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U


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    300MB075 300MB075 PDF

    IRLML6401TRPBF

    Abstract: FTS6000 IR2153PBF irf7530 Top View micro-8 m4820 4864 so8
    Text: PD - 95335C IRF7413ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance


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    95335C IRF7413ZPbF IRF740SPBF, IRFR3707ZPBF, IRLL2705PBF IRF4905PBF O-220) IRFP450PBF O-247) IRF740SPBF IRLML6401TRPBF FTS6000 IR2153PBF irf7530 Top View micro-8 m4820 4864 so8 PDF

    SPM5N-023

    Abstract: 3phase MOSFET INVERTER
    Text: FSB50250UTD Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 4.2 Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs Applications FSB50250UTD is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology


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    FSB50250UTD SPM5N-023 3phase MOSFET INVERTER PDF

    5252 F mosfet

    Abstract: TLP220
    Text: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series


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    TLP220 TLP227G TLP222G, TLP592G, TLP172G TLP192G) TLP222G-2, TLP202G) 5252 F mosfet PDF

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    Abstract: No abstract text available
    Text: SPM FSB50250 TM Smart Power Module Features General Description • 500V 2.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50250 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small


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    FSB50250 FSB50250 PDF

    FSB50325

    Abstract: No abstract text available
    Text: SPM FSB50325 TM Smart Power Module Features General Description • 250V 3.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50325 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small


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    FSB50325 FSB50325 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 5A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor


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    PSM05S93E5-A 240Vrms PDF

    Mitsubishi dipipm application

    Abstract: No abstract text available
    Text: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 5A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor


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    PSM05S93E5-A 240Vrms Mitsubishi dipipm application PDF

    denso

    Abstract: No abstract text available
    Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 3A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor


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    PSM03S93E5-A 240Vrms denso PDF

    Untitled

    Abstract: No abstract text available
    Text: SPM FSB50450 TM Smart Power Module Features General Description • 500V 3.0A peak 3-phase fast-recovery MOSFET inverter including high voltage integrated circuit (HVIC) FSB50450 is a tiny smart power module (SPMTM) based on MOSFET technology as a compact inverter solution for small


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    FSB50450 FSB50450 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 3A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor


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    PSM03S93E5-A 240Vrms PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB50450 Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 2.4Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450 is a Motion SPM5 Series Based on FastRecovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor Drive


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    FSB50450 PDF

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    Abstract: No abstract text available
    Text: FSB50450US Motion SPM 5 FRFET® Series Features General Description • 500 V RDS on = 2.4 Ω (Max) FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450US is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor


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    FSB50450US PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB50250AS Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


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    FSB50250AS FSB50250AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB50450A Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450A is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


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    FSB50450A FSB50450A PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB50450AS Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


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    FSB50450AS FSB50450AS PDF

    SPM5Q-023

    Abstract: FSB50825A
    Text: FSB50825AS Motion SPM 5 FRFET® Series Features General Description • 250 V RDS on = 0.45 Ω(Max) FRFET MOSFET 3Phase Inverter Including HVICs FSB50825AS is an Advanced Motion SPM5 Series Based on Fast-Recovery MOSFET(FRFET) Technology as a Compact Inverter Solution for Small Power Motor


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    FSB50825AS SPM5Q-023 FSB50825A PDF

    aajf

    Abstract: 2SK2473-01 20KC2
    Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q I i ± / N 7 —M OSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er


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    00V/20A/0 2SK2473-01 20kC2 aajf 2SK2473-01 20KC2 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q Ii± /W —MOSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er


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    2SK2473-01 111iw 13dS01AI-Â PDF

    CA3130S

    Abstract: avo meter schematic diagram picoammeter schematic diagram CA3160E N6385 CA3160AS staircase generator circuit CA3160 CA3160AT at11V
    Text: HARRIS SEHICON] SECTOR blE D • i»302B71 004fcj312 «HAS CA3160 HARRIS SEMICONDUCTOR M ■ ff BiMOS Operational Amplifiers with MOSFET Input/CMOS Output March1993 Features Description • MOSFET Input Stage Provides: - Very High Z |« 1.5TA 1.5 x 101iQ) (Typ.)


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    302B71 DD4b312 CA3160 15x1012n) CA3600 CA3160. CA3600E 190kHz. Aa20dB CA3130S avo meter schematic diagram picoammeter schematic diagram CA3160E N6385 CA3160AS staircase generator circuit CA3160AT at11V PDF

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS PDF

    CA3260T

    Abstract: No abstract text available
    Text: & CA3260 BiMOS Operational Amplifier with MOSFET Input/CMOS Output Features Description • MOSFET Input Stage provides - Very High Z, - 1.5TO 1.5 x 1012fl Typ. - Very Low l( = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation CA3260A and CA3260 are integrated circuit operational


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    arch1993 1012fl) CA3260 CA3260A CA3260 CA3160 10kil CA3260, CA3260A CA3260T PDF

    Untitled

    Abstract: No abstract text available
    Text: UFND220 UFND223 POWER MOSFET TRANSISTORS 2 00 Volt 0 .8 Ohm N-Channel FEATURES DESCRIPTION • • • • • • • The Unitrode pow er MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rqsioni an^ a high transconductance.


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    UFND220 UFND223 UFND220, PDF