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    SG 2368

    Abstract: UFND220
    Text: UNITRODE CORP 9347963 TE U N IT R O D E CORP DE 1 ^ 3 4 7 ^ 3 DDlOfllS 1 | ~ 92D ’ iS'^15' 10815 P O W E R M O S F E T T R A N S IS T O R S 200 Volt, 0 .8 Ohm N-Channel UFND220 FEA TU R ES D ESC R IPTIO N • • • • • • • The Unitrode power M OSFET design utilizes the most advanced technology available. This


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    Untitled

    Abstract: No abstract text available
    Text: UFND220 UFND223 POWER MOSFET TRANSISTORS 2 00 Volt 0 .8 Ohm N-Channel FEATURES DESCRIPTION • • • • • • • The Unitrode pow er MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rqsioni an^ a high transconductance.


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    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


    OCR Scan     		U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450 PDF