MOSFET N CHANNEL FOR 800 VOLT 2 AMP Search Results

MOSFET N CHANNEL FOR 800 VOLT 2 AMP Result Highlights (5)

Part	Manufacturer	Description
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

MOSFET N CHANNEL FOR 800 VOLT 2 AMP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TV flyback transformer pinout Abstract: xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer Text: TND334/D Rev. 2, JUN − 2009 50 W Four−Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 2 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes	Original	TND334/D TV flyback transformer pinout xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer	PDF
Nippon capacitors Abstract: No abstract text available Text: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.	Original	MRF1507/D MRF1507 DEVICEMRF1507/D Nippon capacitors	PDF
l2n06cl Abstract: injector MOSFET driver mosfet driver with npn transistor fuel injector mosfet AN569 MLP2N06CL fuel injector mosfet transistor 400 volts.100 amperes Text: MLP2N06CL Preferred Device SMARTDISCRETESt MOSFET 2 Amps, 62 Volts, Logic Level N–Channel TO–220 This logic level power MOSFET features current limiting for short circuit protection, integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping for over–voltage	Original	MLP2N06CL r14525 MLP2N06CL/D l2n06cl injector MOSFET driver mosfet driver with npn transistor fuel injector mosfet AN569 MLP2N06CL fuel injector mosfet transistor 400 volts.100 amperes	PDF
AN569 Abstract: MTP20N20E Text: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for	Original	MTP20N20E r14525 MTP20N20E/D AN569 MTP20N20E	PDF
ldc 4000 Abstract: No abstract text available Text: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for	Original	MTP20N20E O-220 r14525 MTP20N20E/D ldc 4000	PDF
MC74HC02D Abstract: atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE Text: MOTOROLA Order this document by AN1607/D SEMICONDUCTOR APPLICATION NOTE AN1607 ITC122 Low Voltage Micro to Motor Interface By Bill Lucas and Warren Schultz A MOSFET power stage that is designed to run Brush or Brushless DC motors with input signals from an ASB124	Original	AN1607/D AN1607 ITC122 ASB124 MC74HC02D atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE	PDF
L1N06CL Abstract: No abstract text available Text: MLP1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No	Original	MLP1N06CL r14525 MLP1N06CL/D L1N06CL	PDF
MOSFET KV Abstract: MLD1N06CL AN569 MLD1N06CLT4 fuel injector INJECTOR injector MOSFET driver L1N06C Text: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit MCU . Ideal applications	Original	MLD1N06CL MLD1N06CL r14525 MLD1N06CL/D MOSFET KV AN569 MLD1N06CLT4 fuel injector INJECTOR injector MOSFET driver L1N06C	PDF
L1N06CL Abstract: AN569 MLP1N06CL fuel injector mosfet driver with npn transistor injector MOSFET driver injector driver Text: MLP1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No	Original	MLP1N06CL r14525 MLP1N06CL/D L1N06CL AN569 MLP1N06CL fuel injector mosfet driver with npn transistor injector MOSFET driver injector driver	PDF
smd MARKING r5b Abstract: R5C MARKING CODE SOT23 k 2101 MOSFET 0402 100N 16V Y5V fdc6420c smd transistor r5c QFN-32 0-10v dimming leds cg100 smd marking code r54 Text: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory	Original	SMB112 smd MARKING r5b R5C MARKING CODE SOT23 k 2101 MOSFET 0402 100N 16V Y5V fdc6420c smd transistor r5c QFN-32 0-10v dimming leds cg100 smd marking code r54	PDF
uc3842 unitrode 100 watt Abstract: 24v dc power supply with uc3842 UCC2800 application note buck schematic UC3842 note buck converter non isolated UNITRODE applications handbook uc3842 -96 UC3843 in non isolated flyback converter UC3843 application note buck uc3843 12v 5a supply design UC3843 in non isolated boost converter UC3842 application 24V Text: UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 Low-Power BiCMOS Current-Mode PWM FEATURES DESCRIPTION • 100mA Typical Starting Supply Current The UCC1800/1/2/3/4/5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line	Original	UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 100mA UCC1800/1/2/3/4/5 500mA UC3842 UC3842A/5 U-132. UCC3802 uc3842 unitrode 100 watt 24v dc power supply with uc3842 UCC2800 application note buck schematic UC3842 note buck converter non isolated UNITRODE applications handbook uc3842 -96 UC3843 in non isolated flyback converter UC3843 application note buck uc3843 12v 5a supply design UC3843 in non isolated boost converter UC3842 application 24V	PDF
ATC100B120JT500XT Abstract: atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1 Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 6, 9/2008 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier	Original	MRF9210 MRF9210R3 ATC100B120JT500XT atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1	PDF
planar transformer theory Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.	Original	MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A	PDF
FK-002 Abstract: Ringing Choke Converter IRFP448 STR-M6511 STRM6511 Text: Data Sheet 28102 STR-M6511 OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 OSC. S 3 4 + OVER-CURRENT PROTECTION T C FAULT LATCH R COMMON The STR-M6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates	Original	STR-M6511 STR-M6511 FK-002 Ringing Choke Converter IRFP448 STRM6511	PDF

Untitled Abstract: No abstract text available Text: NTD24N06 Power MOSFET 60 Volt, 24 Amp N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V BR DSS RDS(on) TYP ID MAX 60 V 32 mW	Original	NTD24N06 NTD24N06/D	PDF
15N50A Abstract: IXTM15N45 15n50 IXTM15N50 Text: I X Y S CORF? □IXYS 1ÖE D • 4bäb22b QOOQblE 7 ■ IXTH15N45A, IXTH15N50A, ÏXTM15N45A, IXTM15N50A 15 AMPS, 450-500 V, 0.4Q MAXIMUM RATINGS Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	IXTH15N45A IXTH15N50A IXTM15N45A, IXTM15N50A IXTM15N45A IXTH15N50A O-204 O-220 15N50A IXTM15N45 15n50 IXTM15N50	PDF
IXTH12N50 Abstract: No abstract text available Text: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 IXTH12N45 IXTM12N45 IXTH12N50 IXTM12N50 O-204 O-220	PDF
IXTH10N60 Abstract: IXTM10N60 Text: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc	OCR Scan	4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 CHARACTE420 O-204 O-220 O-247	PDF
4N95 Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95 Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 EL420 O-204 4N95 4n100 mosfet ixtm4n95	PDF
6n60a Abstract: IXTM6N60 6n60 600 volt n channel power mosfet Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet	PDF
3n80a Abstract: IXTM3N90 Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po	OCR Scan	4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a	PDF
IXTM4N45 Abstract: P-CHANNEL 45A TO-247 POWER MOSFET IXTM4N50 Mosfet K 135 To3 Text: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IXTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 □ IX Y S 4 AMPS, 450-500 V, 1.5Q/2.0S2 MAXIMUM RATINGS Parameter IXTP4N45 IXTM4N45 Sym. IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1 V 0ss 450 500 vrt„ Drain-Gate Voltage (Re s=1.0 MQ) (1)	OCR Scan	1XTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 IXTP4N45 IXTM4N45 IXTP4N50 ELEC420 O-204 IXTM4N45 P-CHANNEL 45A TO-247 POWER MOSFET Mosfet K 135 To3	PDF
ZO 109 wa Abstract: ixtm2N100 PN channel MOSFET 10A ixtm2N95 Text: 1ÖE I X Y S CORP D • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 AM PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 CHA420 O-204 ZO 109 wa PN channel MOSFET 10A ixtm2N95	PDF
5N95A Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95 Text: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1	OCR Scan	D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-204 O-220 5N95A N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET	PDF

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MOSFET N CHANNEL FOR 800 VOLT 2 AMP Search Results

MOSFET N CHANNEL FOR 800 VOLT 2 AMP Result Highlights (5)

MOSFET N CHANNEL FOR 800 VOLT 2 AMP Datasheets Context Search

TV flyback transformer pinout

Nippon capacitors

l2n06cl

AN569

ldc 4000

MC74HC02D

L1N06CL

MOSFET KV

L1N06CL

smd MARKING r5b

uc3842 unitrode 100 watt

ATC100B120JT500XT

planar transformer theory

FK-002

Untitled

15N50A

IXTH12N50

IXTH10N60

4N95

6n60a

3n80a

IXTM4N45

ZO 109 wa

5N95A