MOSFET MTTF Search Results

MOSFET MTTF Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET MTTF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HTRB Abstract: mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report Text: AOS Semiconductor Reliability Report AO3160, 600V 0.04A N-Channel MOSFET Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 This report applies for 600V 0.04A N-Channel MOSFET AO3160 The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to	Original	AO3160, AO3160 AO3160 HTRB mosfet reliability testing report HTGB JEDEC htrb On semiconductor power MOSFET reliability report reliability testing report power MOSFET reliability report "power MOSFET" reliability report mosfet HTRB MOSFET reliability report	PDF
MRF5P21180 Abstract: CDR33BX104AKWS MRF5P21180R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	MRF5P21180/D MRF5P21180R6 MRF5P21180 CDR33BX104AKWS MRF5P21180R6	PDF
MRF9180R6 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with	Original	MRF9180/D MRF9180R6 MRF9180/D	PDF
MRF5P21180 Abstract: J-1389 MRF5P21180HR6 Text: MOTOROLA Order this document by MRF5P21180HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5P21180HR6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5P21180HR6/D MRF5P21180HR6 MRF5P21180 J-1389	PDF
MRF5P21180 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5P21180/D MRF5P21180R6 MRF5P21180	PDF
MRF5P21180 Abstract: 539 MOTOROLA transistor Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5P21180/D MRF5P21180R6 MRF5P21180 539 MOTOROLA transistor	PDF
nippon capacitors Abstract: 2508051107Y0 3A412 MRF9210R3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with	Original	MRF9210/D MRF9210R3 nippon capacitors 2508051107Y0 3A412 MRF9210R3	PDF
C21B1 Abstract: MRF9180 MRF9180R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with	Original	MRF9180/D MRF9180R6 C21B1 MRF9180 MRF9180R6	PDF
MRF6P21190H Abstract: AN1955 JESD22 MRF6P21190HR6 A114 A115 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6P21190HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6P21190HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF6P21190HR6/D MRF6P21190HR6 MRF6P21190H/D MRF6P21190H AN1955 JESD22 MRF6P21190HR6 A114 A115	PDF
MRF5P21180HR6 Abstract: MRF5P21180 AN1955 CDR33BX104AKWS Motorola 7 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5P21180HR6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5P21180HR6/D MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKWS Motorola 7	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
nippon capacitors Abstract: transistor J585 Text: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210/D MRF9210R3 nippon capacitors transistor J585	PDF
200 watt hf mosfet Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure	Original	AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this	Original	MRF9120/D MRF9120R3 MRF9120/D	PDF

sd2931 fm Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Text: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold	Original	AN1256 SD2933, SD2933 sd2931 fm SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR	PDF
RF push pull power amplifier Abstract: MRF9120 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this	Original	MRF9120/D MRF9120R3 MRF9120/D RF push pull power amplifier MRF9120	PDF
mosfet mttf Abstract: ALD-214012PJ111 MIL-HDBK-217F 214012P 214012 MTTF ALD-214012 Text: CTR-4076-X PRODUCT NAME: ALD-214012PJ111 TEMPERATURES: degC 25 50 75 TOTAL: (fit) 532 649 889 1,493 MTTF: (hour) 1,880,639 1,541,359 1,125,289 669,698 MTTF [hour] FAILURE RATE TABLE: MIL-HDBK-217-F Data of MOSFET used the failure rate of obtaining from the manufacturer	Original	CTR-4076-X ALD-214012PJ111 MIL-HDBK-217-F TSB-08-01-05 mosfet mttf ALD-214012PJ111 MIL-HDBK-217F 214012P 214012 MTTF ALD-214012	PDF
731 MOSFET Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.	Original	MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX	PDF
ATC100B101JT500XT Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with	Original	MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22	PDF
2060 d Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S21140H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. MRF6S21140HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21140HSR3	Original	MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140H/D 2060 d	PDF
AN1955 Abstract: MRF5S19090LR3 MRF5S19090LSR3 336 motorola Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090LSR3	Original	MRF5S19090L/D MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR3 AN1955 MRF5S19090LSR3 336 motorola	PDF
AN1955 Abstract: MRF5S19090HR3 MRF5S19090HSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19090H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19090HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19090HSR3	Original	MRF5S19090H/D MRF5S19090HR3 MRF5S19090HSR3 MRF5S19090HR3 AN1955 MRF5S19090HSR3	PDF
AN1955 Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3	Original	MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3	PDF
465B Abstract: AN1955 MRF5S19150 MRF5S19150HR3 MRF5S19150HSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19150H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19150HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150HSR3	Original	MRF5S19150H/D MRF5S19150HR3 MRF5S19150HSR3 MRF5S19150HR3 465B AN1955 MRF5S19150 MRF5S19150HSR3	PDF

MOSFET MTTF Search Results

MOSFET MTTF Result Highlights (5)

MOSFET MTTF Datasheets Context Search

HTRB

MRF5P21180

MRF9180R6

MRF5P21180

MRF5P21180

MRF5P21180

nippon capacitors

C21B1

MRF6P21190H

MRF5P21180HR6

MRF9030N

nippon capacitors

200 watt hf mosfet

Untitled

sd2931 fm

RF push pull power amplifier

mosfet mttf

731 MOSFET

ATC100B101JT500XT

2060 d

AN1955

AN1955

AN1955

465B