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    NXP Semiconductors MRF9180R5

    RF MOSFET LDMOS 26V NI1230
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    NXP Semiconductors MRF9180R6

    RF MOSFET LDMOS 26V NI1230
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    DigiKey MRF9180R6 Reel 150
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    MRF9180 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF9180 Freescale Semiconductor RF PWR LDMOS Original PDF
    MRF9180 Motorola RF Power field Effect Transistor Original PDF
    MRF9180 Motorola MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9180R6 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-1230 Original PDF
    MRF9180R6 Freescale Semiconductor 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF9180S Motorola 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs Original PDF

    MRF9180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9180R6

    Abstract: rf push pull mosfet power amplifier 865 marking amplifier c11b3
    Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF Hig9180R6 MRF9180R6 rf push pull mosfet power amplifier 865 marking amplifier c11b3

    MRF9180

    Abstract: MRF9180R6
    Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 IS-95 MRF9180 MRF9180R6

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    MRF9180

    Abstract: GGG 92 MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9180/D MRF9180 MRF9180S MRF9180 GGG 92 MRF9180S

    MRF9180

    Abstract: MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9180/D MRF9180 MRF9180S MRF9180 MRF9180S

    rf push pull mosfet power amplifier

    Abstract: push pull power amplifier
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9180/D MRF9180 MRF9180S MRF9180/D rf push pull mosfet power amplifier push pull power amplifier

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    MRF9180R6

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9180/D MRF9180R6 MRF9180/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original     		PDF MRF9180/D MRF9180 MRF9180S

    MRF9180R6

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 MRF9180R6

    MRF9180

    Abstract: MRF9180R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF9180 Rev. 10, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 MRF9180 MRF9180R6

    MRF9180R6

    Abstract: No abstract text available
    Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 IS-95 MRF9180R6

    MRF9180R6

    Abstract: MRF9180 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9180 Rev. 10, 5/2006 N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 MRF9180R6 MRF9180 marking us capacitor pf l1

    MRF9180

    Abstract: MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original     		PDF MRF9180/D MRF9180 MRF9180S MRF9180 MRF9180S

    C21B1

    Abstract: MRF9180 MRF9180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9180/D MRF9180R6 C21B1 MRF9180 MRF9180R6

    MRF9180R6

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 IS-97 MRF9180R6

    MRF9180

    Abstract: MRF9180R6 marking us capacitor pf l1 L3Z18
    Text: Freescale Semiconductor Technical Data Document Number: MRF9180 Rev. 10, 5/2006 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 MRF9180 MRF9180R6 marking us capacitor pf l1 L3Z18

    MRF9180

    Abstract: UGF09180F Cree Microwave UGF09180
    Text: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09180 869-894MHz, 869-894MHz. MRF9180. 28VDC, 869MHz, UGF09180 MRF9180 UGF09180F Cree Microwave

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181


    Original     		PDF MBC13900 MRF281SR1 MRF281ZR1 MRF282SR1 MRF282ZR1 MRF284 MRF284SR1 MRF21090S MRF21120 MRF21120S

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901