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    MOSFET MARKING STP Search Results

    MOSFET MARKING STP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET MARKING STP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP4803

    Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
    Text: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4803 STP4803 -30V/-5 -30V/-4 STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8

    Untitled

    Abstract: No abstract text available
    Text: STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STP9547 STP9547 -40V/-5

    Untitled

    Abstract: No abstract text available
    Text: STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP9527 STP9527 -40V/-10 -40V/-8

    channel mosfet sop_8

    Abstract: stp4953 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package
    Text: STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4953 STP4953 -30V/-5 -30V/-4 -30V/-3 channel mosfet sop_8 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package

    stp9527

    Abstract: P Channel Low Gate Charge 100A mosfet 100A
    Text: STP9527 P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP9527 STP9527 -40V/-10 -40V/-8 P Channel Low Gate Charge 100A mosfet 100A

    marking 52a

    Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking
    Text: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STP3481 STP3481 -30V/-5 55m-ohm -30V/-4 75m-ohm marking 52a DIODE 30V TSOP DIODE S6 52a 6P marking

    st9435

    Abstract: STP9435 stp943 marking code 8P
    Text: STP9435 P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP9435 ST9435 -30V/-5 -30V/-4 STP9435 stp943 marking code 8P

    SOT323 MOSFET P

    Abstract: ST7401S32RG S 170 MOSFET TRANSISTOR ST7401 STP7401S32RG sot-323 transistor marking code 15 S32 SOT
    Text: STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP7401 STP7401 OT-323 SC-70) -30V/-2 -30V/-1 SOT323 MOSFET P ST7401S32RG S 170 MOSFET TRANSISTOR ST7401 STP7401S32RG sot-323 transistor marking code 15 S32 SOT

    STP413D

    Abstract: TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41
    Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either


    Original     		PDF STP413D STP413D O-252 O-251 -40V/-12 -40V/-8 O-252 O-251ancement TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41

    mosfet 100A

    Abstract: No abstract text available
    Text: STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either


    Original     		PDF STP607D STP607D O-252 O-251 -60V/-10 O-252package mosfet 100A

    Untitled

    Abstract: No abstract text available
    Text: STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP6625 STP6625 -60V/-5 -60V/-3

    Untitled

    Abstract: No abstract text available
    Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either


    Original     		PDF STP413D STP413D O-252 O-251 -40V/-12 -40V/-8 O-252-2L

    STP4189D

    Abstract: No abstract text available
    Text: STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STP4189D STP4189D STP413D O-252 O-251 -40V/-12 -40V/-8 O-252 O-251

    P1013

    Abstract: MOSFET 20V 45A SC89 SC-89 MOSFET P 950 STP1013
    Text: P1013 ST STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STP1013 STP1013 OT-523 SC-89 520ohm 700ohm P1013 MOSFET 20V 45A SC89 SC-89 MOSFET P 950

    Untitled

    Abstract: No abstract text available
    Text: STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STP6635GH STP6635GH STP413D O-252 O-251 -30V/-26 -30V/-16 O-252

    Untitled

    Abstract: No abstract text available
    Text: STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4953 STP4953 -30V/-5 -30V/-4 -30V/-3

    Untitled

    Abstract: No abstract text available
    Text: STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP6621 STP6621 -60V/-10 -60V/-8

    Untitled

    Abstract: No abstract text available
    Text: STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP6623 STP6621 -60V/-10 -60V/-8 STP6623

    Untitled

    Abstract: No abstract text available
    Text: STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP9435 STP9435 -30V/-5 -30V/-4

    TRANSISTOR stp601

    Abstract: No abstract text available
    Text: STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC


    Original     		PDF STP601 STP601D STP601/STP601D STP401 O-252 O-251 STP610 -60V/-20 TRANSISTOR stp601

    Untitled

    Abstract: No abstract text available
    Text: STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4435 STP4435 -30V/-9 -30V/-7 packa2007,

    CA-5D1 250A

    Abstract: No abstract text available
    Text: STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These


    Original     		PDF STP3052D STP3052D O-252 O-251 -30V/-25 -30V/-16 CA-5D1 250A

    Untitled

    Abstract: No abstract text available
    Text: STP4925 P Dual Channel Enhancement Mode MOSFET -7.2A DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STP4925 STP4925 -30V/-7 -30V/-5 MARKINP4925

    P channel MOSFET 10A

    Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
    Text: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STP6308 STP6308 OT-363 SC70-6L -20V/1 -20V/0 P channel MOSFET 10A stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca marking 6l SC70-6L p channel mosfet 10a 20v