Untitled
Abstract: No abstract text available
Text: ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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ST9435GP
ST9435GP
-30V/-10A,
-30V/-5A,
O-220
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st9435
Abstract: STP9435 stp943 marking code 8P
Text: STP9435 P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP9435
ST9435
-30V/-5
-30V/-4
STP9435
stp943
marking code 8P
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st9435
Abstract: ST9435A marking sop-8 MOSFET 30v sop-8 72m transistor
Text: ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST9435A
ST9435A
-30V/-5
-30V/-4
st9435
marking sop-8
MOSFET 30v sop-8
72m transistor
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Untitled
Abstract: No abstract text available
Text: ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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Original
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ST9435A
ST9435A
-30V/-5
-30V/-4
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