20n60s1
Abstract: 60v 10a p type mosfet 20n60s
Text: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system
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FMP20N60S1
O-220
O-220AB
20n60s1
60v 10a p type mosfet
20n60s
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20N60S1
Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
Text: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]
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FMV20N60S1
O-220F
20N60S1
Fmv20n60
FMV20N60S1
fuji electric lot code
20N60S
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FMW20N60S1
Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Text: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]
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FMW20N60S1HF
O-247-P2
FMW20N60S1
20n60s1
20n60s
mosfet 600V 20A
FMW20N60S1HF
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20N60S1
Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
Text: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2
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FMH20N60S1
20N60S1
FMH20N60S1
600V 20A N-Channel MOSFET TO-3P
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EPC-19 TRANSFORMER
Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing
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AN9506
500kHz,
HIP4081A
HIP4081A
EPC-19 TRANSFORMER
AHB ZVS
AN9506
resonant single ended forward converter
HIP4081
phase shifted full-bridge ZVS dc-dc converter
74ACT86
Full-bridge series resonant converter
an9325
EPC TRANSFORMER
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PDF
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AHB ZVS
Abstract: EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier
Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing
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AN9506
500kHz,
HIP4081A
HIP4081A
AHB ZVS
EPC-19 TRANSFORMER
TDK Ferrite Core PC40
500w Full bridge transformer
AN9506
HIP4081 pwm controller
10Turns
Design of Isolated Converters Using Simple Switch
HIP4081
single phase bridge fully controlled rectifier
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PDF
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EPC-19 TRANSFORMER
Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
Text: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing
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Original
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AN9506
500kHz,
HIP4081A
HIP4081A
EPC-19 TRANSFORMER
AN9506
an9325
BAE-030D
500w Full bridge transformer
ZVS phase-shift converters
AHB ZVS
1/3 phase bridge fully controlled rectifier
TDK Ferrite Core PC40
500W dc/dc converter pwm
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PDF
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8012g
Abstract: No abstract text available
Text: SEMICONDUCTOR KF17N50N TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KF17N50N
above25
Fig12.
Fig13.
Fig14.
Fig15.
8012g
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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TPCA8077
Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082C
BCJ0082B
TPCA8077
TK12A10K3
TK25E06K3
TPCA*8030
TJ11A10M3
SSM6J501NU
TPCA8057-H
2SK4112
TPC8217-H
TK50E06K3A
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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PDF
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TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082D
BCJ0082C
TK12A10K3
tk25e06k3
TK50E06K3A
tk20e60u
TPCA*8065
TJ11A10M3
SSM6J501NU
TPCA8077
TJ9A10M3
TK8A10K3
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PLUGGING BRAKING DIAGRAM
Abstract: lt1162 LT1160 55585-A2 LT3526
Text: D iD f G ^ IL I^ S E Final Electrical Specifications u n LT1160/LT1162 m TECHNOLOGY H alf-/F ull-B ridge N -C h a n n e l P o w e r MOSFET Drivers J u ly 1995 F€OTUR€S D C S C R IP T IO n • Floating Top Driver Switches Up to 60V ■ Drives Gate of Top N-Channel MOSFET
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OCR Scan
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LT1160/LT1162
180ns
000pF
1160/LT1162
1N4148
40kHz
HL-KM147U
RCS01
5V10A
LT1162
PLUGGING BRAKING DIAGRAM
lt1162
LT1160
55585-A2
LT3526
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lv 5682
Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically
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OCR Scan
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RD60HUF1
RD60HUF1
lv 5682
mar 835 mosfet
MAS 560 ag
TRANSISTOR D 5702
MOSFET, 3077
transistor k 2837
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Untitled
Abstract: No abstract text available
Text: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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OCR Scan
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IRFP440
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PDF
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HA1190
Abstract: No abstract text available
Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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OCR Scan
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IRFP440A
HA1190
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PDF
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C1413
Abstract: T039 package
Text: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C
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OCR Scan
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UF2801K1
C1413
T039 package
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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OCR Scan
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IRF340
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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OCR Scan
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IRFP340A
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PDF
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K1246
Abstract: 2SK1246 F5V50
Text: V X v ' J ~ X A 0|7 — M O S F E T VX S e r ie s Pow er MOSFET 2SK1246 O U T L IN E D IM E N S IO N S [F5V50] 500V 5A • A C l OOVmA^COX'f • 7 . ^ v ? V :7 £ S * E B S • '1 'V A - i' • Æ fë * R A T IN G S •Îfë ftil^ ÏE lfë « Absolute Maximum Ratings
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OCR Scan
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2SK1246
F5V50]
O-220
K1246
200Vn
100VN
GGO2513
2SK1246
F5V50
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PDF
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Untitled
Abstract: No abstract text available
Text: s e MIKRDn Absolute Maximum Ratings Symbol V rrm Ifsm l2t Tsolder Tvj, T stg Tvj, Tstg Conditions ' Values Units 1200 V 180 162 375 -5 5 + 150 A A^s °C SEMICELL CAL - Diode Chips3 SKCD 18C 120 I > 2 bondwires 300 nm 0 ) tp = 10 ms; sin; T j = 150 °C tp = 10 ms; sin; T j = 150 °C
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OCR Scan
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C/125
CD018205
00Db7E4
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PDF
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MBR130LT3
Abstract: lt 16241 CTX10-4 WF-Series IRL540
Text: r r i m LTC1624 m TECHNOLOGY High Efficiency SO-8 N-Channel Switching R egulator C ontroller F€OTUR€S D € S C R IP TIO fl • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation
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OCR Scan
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LTC1624
200kHz,
14-Pin
20-Pin
16-Pin
LTC1436/LTC1436-PLL
LTC1474/LTC1475
24-Pin
MBR130LT3
lt 16241
CTX10-4
WF-Series
IRL540
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW/I630A FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) II
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OCR Scan
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IRFW/I630A
Fig15.
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PDF
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547 MOSFET
Abstract: *c1251c
Text: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V
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OCR Scan
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SSP1N50A
547 MOSFET
*c1251c
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PDF
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