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    MOSFET J 162 Search Results

    MOSFET J 162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET J 162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n60s1

    Abstract: 60v 10a p type mosfet 20n60s
    Text: / FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system


    Original     		PDF FMP20N60S1 O-220 O-220AB 20n60s1 60v 10a p type mosfet 20n60s

    20N60S1

    Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
    Text: / FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		PDF FMV20N60S1 O-220F 20N60S1 Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S

    FMW20N60S1

    Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
    Text: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		PDF FMW20N60S1HF O-247-P2 FMW20N60S1 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF

    20N60S1

    Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
    Text: / FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2


    Original     		PDF FMH20N60S1 20N60S1 FMH20N60S1 600V 20A N-Channel MOSFET TO-3P

    EPC-19 TRANSFORMER

    Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
    Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER

    AHB ZVS

    Abstract: EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier
    Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A AHB ZVS EPC-19 TRANSFORMER TDK Ferrite Core PC40 500w Full bridge transformer AN9506 HIP4081 pwm controller 10Turns Design of Isolated Converters Using Simple Switch HIP4081 single phase bridge fully controlled rectifier

    EPC-19 TRANSFORMER

    Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
    Text: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm

    8012g

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF17N50N TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KF17N50N above25 Fig12. Fig13. Fig14. Fig15. 8012g

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    PLUGGING BRAKING DIAGRAM

    Abstract: lt1162 LT1160 55585-A2 LT3526
    Text: D iD f G ^ IL I^ S E Final Electrical Specifications u n LT1160/LT1162 m TECHNOLOGY H alf-/F ull-B ridge N -C h a n n e l P o w e r MOSFET Drivers J u ly 1995 F€OTUR€S D C S C R IP T IO n • Floating Top Driver Switches Up to 60V ■ Drives Gate of Top N-Channel MOSFET


    OCR Scan     		PDF LT1160/LT1162 180ns 000pF 1160/LT1162 1N4148 40kHz HL-KM147U RCS01 5V10A LT1162 PLUGGING BRAKING DIAGRAM lt1162 LT1160 55585-A2 LT3526

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837

    Untitled

    Abstract: No abstract text available
    Text: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440

    HA1190

    Abstract: No abstract text available
    Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440A HA1190

    C1413

    Abstract: T039 package
    Text: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C


    OCR Scan     		PDF UF2801K1 C1413 T039 package

    Untitled

    Abstract: No abstract text available
    Text: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF340

    Untitled

    Abstract: No abstract text available
    Text: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFP340A

    K1246

    Abstract: 2SK1246 F5V50
    Text: V X v ' J ~ X A 0|7 — M O S F E T VX S e r ie s Pow er MOSFET 2SK1246 O U T L IN E D IM E N S IO N S [F5V50] 500V 5A • A C l OOVmA^COX'f • 7 . ^ v ? V :7 £ S * E B S • '1 'V A - i' • Æ fë * R A T IN G S •Îfë ftil^ ÏE lfë « Absolute Maximum Ratings


    OCR Scan     		PDF 2SK1246 F5V50] O-220 K1246 200Vn 100VN GGO2513 2SK1246 F5V50

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRDn Absolute Maximum Ratings Symbol V rrm Ifsm l2t Tsolder Tvj, T stg Tvj, Tstg Conditions ' Values Units 1200 V 180 162 375 -5 5 + 150 A A^s °C SEMICELL CAL - Diode Chips3 SKCD 18C 120 I > 2 bondwires 300 nm 0 ) tp = 10 ms; sin; T j = 150 °C tp = 10 ms; sin; T j = 150 °C


    OCR Scan     		PDF C/125 CD018205 00Db7E4

    MBR130LT3

    Abstract: lt 16241 CTX10-4 WF-Series IRL540
    Text: r r i m LTC1624 m TECHNOLOGY High Efficiency SO-8 N-Channel Switching R egulator C ontroller F€OTUR€S D € S C R IP TIO fl • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation


    OCR Scan     		PDF LTC1624 200kHz, 14-Pin 20-Pin 16-Pin LTC1436/LTC1436-PLL LTC1474/LTC1475 24-Pin MBR130LT3 lt 16241 CTX10-4 WF-Series IRL540

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I630A FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.333 £l(Typ.) II


    OCR Scan     		PDF IRFW/I630A Fig15.

    547 MOSFET

    Abstract: *c1251c
    Text: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V


    OCR Scan     		PDF SSP1N50A 547 MOSFET *c1251c