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    MOSFET IRFD9120 Search Results

    MOSFET IRFD9120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFD9120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET IRFd9120

    Abstract: IRFD9120 IRFD9120 mosfet
    Text: IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


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    IRFD9120 MOSFET IRFd9120 IRFD9120 IRFD9120 mosfet PDF

    IRFD9120

    Abstract: MOSFET IRFd9120
    Text: IRFD9120 Data Sheet January 2002 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


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    IRFD9120 TA17501. IRFD9120 MOSFET IRFd9120 PDF

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120 Data Sheet Title FD 20 bt A, 0V, 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


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    IRFD9120 TA17501. IRFD9120 PDF

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


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    BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 PDF

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


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    MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220 PDF

    mospower applications handbook

    Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
    Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode


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    PDF

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFD9120 PDF

    irfd9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 18-Jul-08 irfd9120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 12-Mar-07 PDF

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 11-Mar-11 IRFD9120 PDF

    irfd9120

    Abstract: SiHFD9120
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 18-Jul-08 irfd9120 PDF

    IRFD9120

    Abstract: IRFD9120PBF vishay marking irfd9120 SiHFD9120
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 18-Jul-08 IRFD9120 IRFD9120PBF vishay marking irfd9120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRFD9120

    Abstract: irfd9120pbf
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


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    IRFD9120, SiHFD9120 2002/95/EC 11-Mar-11 IRFD9120 irfd9120pbf PDF

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


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    BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    BC237

    Abstract: BC857A MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


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    BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1 PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan
    BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240 PDF

    IRFD9120

    Abstract: No abstract text available
    Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =


    OCR Scan
    PDF

    IRFD9120

    Abstract: No abstract text available
    Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan
    IRFD9120 -100V, -100V TA17501. TB334 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan
    2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    IRFD9120

    Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
    Text: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan
    irfd9120/9123 IRFD9120 IRFD9123 IBFD9120 1RFIW123 IFD912( FD912: P-36852â 25M735 Glfl23a FD9120 MOSFET IRFd9120 ON950 IF-D91 PDF