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    MOSFET IRF9540 Search Results

    MOSFET IRF9540 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF9540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


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    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


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    PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    IRF9540N

    Abstract: IRF9540NS
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1483A IRF9540NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description


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    PDF IRF9540NS -100V IRF9540N IRF9540NS

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L


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    PDF IRF9540NSPbF IRF9540NLPbF IRF9540NS/L -100V O-262 EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF9540N

    Abstract: No abstract text available
    Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L


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    PDF IRF9540NSPbF IRF9540NLPbF IRF9540NS/L -100V O-262 EIA-418. IRF9540N

    IRF9540NSPBF

    Abstract: No abstract text available
    Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L


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    PDF IRF9540NSPbF IRF9540NLPbF IRF9540NS/L -100V O-262 EIA-418. IRF9540NSPBF

    IRF9540 application

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9540 application

    IRF9540

    Abstract: IRF954
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9540 IRF954

    IRF9540

    Abstract: SiHF9540 SiHF9540-E3 IRF9540 application IRF9540 mosfet
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9540 SiHF9540-E3 IRF9540 application IRF9540 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L


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    PDF IRF9540NSPbF IRF9540NLPbF IRF9540NS/L -100V O-262 EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


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    PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    100v 23A P-Channel MOSFET

    Abstract: IRF9540L IRF9540S
    Text: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω


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    PDF 91483C IRF9540NS/L IRF9540S) IRF9540L) -100V 100v 23A P-Channel MOSFET IRF9540L IRF9540S

    IRF9540 application

    Abstract: data sheet IRF9540 IRF9540 SiHF9540 SiHF9540-E3
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration • Repetitive Avalanche Rated 0.20 Available RoHS* • P-Channel


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    PDF IRF9540, SiHF9540 O-220 O-220 18-Jul-08 IRF9540 application data sheet IRF9540 IRF9540 SiHF9540-E3

    IRF9540L

    Abstract: IRF9540S
    Text: PD - 91483D IRF9540NS/L Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω


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    PDF 91483D IRF9540NS/L IRF9540S) IRF9540L) -100V EIA-418. IRF9540L IRF9540S

    IRF9540NS

    Abstract: IRF9540N IRF9540NL IRF9540L
    Text: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω


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    PDF 91483E IRF9540NS/L IRF9540NS) IRF9540NL) -100V capabl40 EIA-418. IRF9540NS IRF9540N IRF9540NL IRF9540L

    IRF9540N

    Abstract: BU 11A
    Text: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω


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    PDF IRF9540N -100V O-220 IRF9540N BU 11A

    Untitled

    Abstract: No abstract text available
    Text: PD - 91483E IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω


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    PDF 91483E IRF9540NS/L IRF9540NS) IRF9540NL) -100V EIA-418.

    Irf640 irf9540

    Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF

    RF9540

    Abstract: No abstract text available
    Text: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


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    PDF RF9540S) IRF9540L) RF9540

    smd WV1

    Abstract: smd diode WV1 smd WV1 15 AN-994 IRF9540S SMD-220 smd diode wv
    Text: PD-9.917 International S Rectifier IRF9540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Vdss - -100V ^DS on =


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    PDF IRF9540S SMD-220 smd WV1 smd diode WV1 smd WV1 15 AN-994 IRF9540S smd diode wv