irf540n irf640
Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S
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BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
irf540n irf640
IRF630 complementary
IRF840 complementary
irf630 irf640
IRF730 complementary
irfp460 complementary
MOSFET IRF540n complementary
Complementary MOSFETs buz11
IRF9540 complementary
Irfp250 irfp460
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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IRF510N
Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5
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MS-012AA
TS-001AA
MO-169AB
RF1K49090
RF1K49093
RF1K49092
RF3S49092SM
RF3V49092
RF1K49223
RF1K49088
IRF510N
MOSFET Selection Guide
Power MOSFET Selection Guide
IRFR110N
HRF3205 equivalent
RFD7N10LESM
IRFD110
IRFD9120
IRFP9150
irfu9220
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TP2350B
Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS
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TP2150B
TP2150B
TP2350B
mosfet vn10
TRIPATH TC2001
Tp2350
VN10
VN10 application
13N10
100uF 150v capacitor
what is the best speaker wattage and ohms
TRIPATH TECHNOLOGY
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IRF530N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description
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IRF530N
O-220
commercial-industrRF1010
IRF530N
IRF1010
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IRF530N
Abstract: IRF530N applications IRF1010 irf1010 applications
Text: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier
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IRF530N
O-220
IRF1010
IRF530N
IRF530N applications
IRF1010
irf1010 applications
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IRF530N
Abstract: MOSFET IRF530n
Text: IRF530N Data Sheet July 2001 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET FO pdfPackaging mark Features JEDEC TO-220AB [ /PageMode /UseOutlines /DOCVIEW pdfmark SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
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IRF530N
O-220AB
IRF530N
MOSFET IRF530n
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Transistor SMD SOT363 SC70
Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved
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Untitled
Abstract: No abstract text available
Text: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"
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IRF530NSPbF
IRF530NLPbF
EIA-418.
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00e-6
Abstract: IRF530N AN7254 AN7260 AN9321 AN9322 TB334
Text: IRF530N Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530N
O-220AB
00e-6
IRF530N
AN7254
AN7260
AN9321
AN9322
TB334
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IRF530N applications
Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ
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IRF530NSPbF
IRF530NLPbF
EIA-418.
IRF530N applications
AN-994
IRF530N
IRF530NL
IRL3103L
4.5v to 100v input regulator
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AN-994
Abstract: IRF530N IRF530NL IRL3103L
Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ
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IRF530NSPbF
IRF530NLPbF
EIA-418.
AN-994
IRF530N
IRF530NL
IRL3103L
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IRF530NS
Abstract: IRF530N IRF530NL AN-994
Text: PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.11Ω G ID = 17A S
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1352A
IRF530NS/L
IRF530NS)
IRF530NL)
IRF530NS
IRF530N
IRF530NL
AN-994
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IRF530NS
Abstract: 7A, 100v fast recovery diode AN-994 IRF530N IRF530NL IRF530S 4.5v to 100v input regulator
Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description
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91352B
IRF530NS
IRF530NL
EIA-418.
IRF530NS
7A, 100v fast recovery diode
AN-994
IRF530N
IRF530NL
IRF530S
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 94962 IRF530NPbF HEXFETÆ Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 90m" G ID = 17A S Description
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IRF530NPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description
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91352B
IRF530NS
IRF530NL
EIA-418.
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IRF530N
Abstract: MOSFET IRF530n
Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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1351A
IRF530N
O-220
IRF1010
IRF530N
MOSFET IRF530n
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IRF530N
Abstract: No abstract text available
Text: PD - 91351A IRF530N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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1351A
IRF530N
O-220
IRF530N
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IRF530N
Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Text: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530N
O-220AB
IRF530N
AN7254
AN7260
AN9321
AN9322
TB334
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AN-994
Abstract: IRF530N IRF530NL IRF530NS
Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRF530NS
1352A
IRF530NS/L
IRF530NS)
IRF530NL)
AN-994
IRF530N
IRF530NL
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4.5v to 100v input regulator
Abstract: No abstract text available
Text: PD - 94962 IRF530NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description
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IRF530NPbF
O-220
O-220AB
4.5v to 100v input regulator
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IRF530NPBF
Abstract: 12RD 4.5v to 100v input regulator
Text: PD - 94962 IRF530NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description
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IRF530NPbF
O-220
IRF530NPBF
12RD
4.5v to 100v input regulator
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complementary of irf830
Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3
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BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
complementary of irf830
IRF630 complementary
irf630 irf640
irf540n irf640
IRF640 irf510
IRFP150
Irfp250 irfp460
IRF640
IRFP150N
IRF610 complementary
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Untitled
Abstract: No abstract text available
Text: International [bk]Rectifier PD-9.1352 IRF530NS PRELIMINARY H E X F E # Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V 'DS on = 0.11Q
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IRF530NS
0023b34
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