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    MOSFET FOR POWER ELECTRONIC Search Results

    MOSFET FOR POWER ELECTRONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET FOR POWER ELECTRONIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features Power MOSFET gate driver for half-bridge


    Original     		PDF TPD7211F TPD7211F SON8-P-0303-0 7211F

    equivalent 2sk2837 mosfet

    Abstract: No abstract text available
    Text: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.


    Original     		PDF UT6302 UT6302 UT6302L-AE3-R UT6302G-AE3-R OT-23 QW-R502-363

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET  DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.


    Original     		PDF UT6302 UT6302 UT6302G-AE2-R UT6302G-AE3-R OT-23-3 OT-23 6302G QW-R502-363

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.


    Original     		PDF UT6302 UT6302 UT6302L-AE2-R UT6302G-AE2-R UT6302L-AE3-R UT6302G-AE3-R OT-23-3 OT-23 QW-R502-363

    TO-220ML

    Abstract: 2SK3702 2SJ655 2SK3706 2SJ651 220ML to220ml 2SK3707 2SJ650 2SJ653
    Text: Ordering number : ENN7623 Power MOSFET for 60V/100V Large-signal Power MOSFET for 60V/100V Motor Drivers The Power MOSFET new series products are large-signal, medium-voltage Power MOSFETs optimized for DC/DC converters and motor drives with a DC input of 12V to 48V. Taking the form of a full-mold TO-220 TO-220ML , the


    Original     		PDF ENN7623 0V/100V 0V/100V O-220 O-220ML) TO-220ML 2SK3702 2SJ655 2SK3706 2SJ651 220ML to220ml 2SK3707 2SJ650 2SJ653

    Untitled

    Abstract: No abstract text available
    Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z


    Original     		PDF TPD7211F TPD7211F SON8-P-0303-0 7211F

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging


    Original     		PDF CJMNT32 CJMNT32 600mA 250uA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging


    Original     		PDF CJMNT32 CJMNT32 100KHz 500mA

    AN10273

    Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
    Text: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.


    Original     		PDF AN10273 philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET „ DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,


    Original     		PDF UT6302 UT6302 UT6302G-AE3-R OT-23 6302G QW-R502-363

    MR0413A

    Abstract: No abstract text available
    Text: Automotive Electronics Product Information MB0413A / MR0413A MOSFET power modules for Electric Power Steering Products in development Features  High power mold module combination for electric power steering applications  Two module approach for high system safety


    Original     		PDF MB0413A MR0413A MR0413A

    NTGD4169F

    Abstract: NTHD3101F NTHD4N02F NTLJF3117P NTLJF4156N NTTD4401F 043V1 NTLGF3402P
    Text: Typical Uses for FETKY Devices FETKY D1 MOSFET + Schottky Co-packaged Vin Introduction In consumer electronic circuits, Schottky diodes are often seen working with power MOSFETs to implement system level power solutions. There are different reasons for integrating a Schottky diode with a MOSFET. Typical


    Original     		PDF SGD524/D NTGD4169F NTHD3101F NTHD4N02F NTLJF3117P NTLJF4156N NTTD4401F 043V1 NTLGF3402P

    15N08L

    Abstract: 15N08 NTD15N08 NTD15N08L Integrated Starter Alternator
    Text: NTD15N08, NTD15N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTD15N08, NTD15N08L 15N08 15N0hibbertco r14525 NTD15N08/D 15N08L NTD15N08 NTD15N08L Integrated Starter Alternator

    20N08

    Abstract: 20N08L NTD20N08 NTD20N08L
    Text: NTD20N08, NTD20N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTD20N08, NTD20N08L 20N08 20NAN r14525 NTD20N08/D 20N08L NTD20N08 NTD20N08L

    12n08

    Abstract: 12N08l NTD12N08L NTD12N08
    Text: NTD12N08, NTD12N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTD12N08, NTD12N08L 12N08 r14525 NTD12N08/D 12N08l NTD12N08L NTD12N08

    ARM pin configuration

    Abstract: toshiba motor HIGH POWER MOSFET TOSHIBA high side MOSFET driver with charge pump "Power MOSFET" DIODE marking VU pin diagram of MOSFET Power MOSFET, toshiba MAKING WU MOSFET DRIVER LOW SIDE IC high side mosfet
    Text: TPD7203F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7203F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7203F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge


    Original     		PDF TPD7203F TPD7203F SSOP-24 ARM pin configuration toshiba motor HIGH POWER MOSFET TOSHIBA high side MOSFET driver with charge pump "Power MOSFET" DIODE marking VU pin diagram of MOSFET Power MOSFET, toshiba MAKING WU MOSFET DRIVER LOW SIDE IC high side mosfet

    TPD7210F

    Abstract: tpd7210
    Text: TPD7210F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7210F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7210F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge


    Original     		PDF TPD7210F TPD7210F SSOP-24 tpd7210

    3n08

    Abstract: NTMD3N08 NTMD3N08L starter alternator electronic power steering 3N08L
    Text: NTMD3N08, NTMD3N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTMD3N08, NTMD3N08L 3N08AN r14525 NTMD3N08/D 3n08 NTMD3N08 NTMD3N08L starter alternator electronic power steering 3N08L

    3n08

    Abstract: 3N08L NTF3N08L NTF3N08
    Text: NTF3N08, NTF3N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTF3N08, NTF3N08L 3N08L r14525 NTF3N08/D 3n08 NTF3N08L NTF3N08

    NTD26N08

    Abstract: NTD26N08L
    Text: NTD26N08, NTD26N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTD26N08, NTD26N08L 26N08 26Nhibbertco r14525 NTD26N08/D NTD26N08 NTD26N08L

    2n08

    Abstract: 2n08l Catalytic Converter NTF2N08 NTF2N08L NTF3N08 NTF3N08L
    Text: NTF2N08, NTF2N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTF2N08, NTF2N08L 2N08L r14525 NTF2N08/D 2n08 Catalytic Converter NTF2N08 NTF2N08L NTF3N08 NTF3N08L

    transistor npn high speed switching

    Abstract: TRANSISTOR mosfet k2
    Text: FA7622P M Bipolar 1C For Switching Power Supply Control • Description ■ Dimensions, mm The FA7622P(M) is a DC-DC converter 1C that can directly drive a power MOSFET. This 1C has all the necessary protection functions for a power MOSFET. It is optimum for


    OCR Scan     		PDF FA7622P OP-21) 600mA) transistor npn high speed switching TRANSISTOR mosfet k2

    FA7622P

    Abstract: similar ic book 67CP R10D FA7622
    Text: Bipolar 1C For Switching Power Supply Control FA7622P M • Description I Dimensions, mm The FA7622P<M) is a DC-DC converter 1C that can directly drive a power MOSFET. This !C has all the necessary protection functions for a power MOSFET. It is optimum for


    OCR Scan     		PDF FA7622P FA7622P FA7622PM) OP-20 similar ic book 67CP R10D FA7622