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    R10D Search Results

    R10D Result Highlights (1)

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    R10-D7 Renesas Electronics Corporation Low Latency Contribution Encoder Software for D7Pro Visit Renesas Electronics Corporation
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    R10D Price and Stock

    TDK Corporation MLZ1608DR10DT000

    FIXED IND 100NH 850MA 140MOHM SM
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    DigiKey MLZ1608DR10DT000 Cut Tape 72,275 1
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    TDK Corporation MLZ2012DR10DT000

    FIXED IND 100NH 1.15A 70MOHM SMD
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    DigiKey MLZ2012DR10DT000 Cut Tape 46,145 1
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    Harvatek Corporation E3113BGR-10D0003Q3U1930

    LED RGB 4SMD R/A
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    DigiKey E3113BGR-10D0003Q3U1930 Cut Tape 22,065 1
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    Crydom Inc DR10D12

    SSR RELAY SPST-NO 12A 1-100V
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    Crydom Inc GNR10DHZ

    SSR RELAY SPST-NO 10A 24-280V
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    DigiKey GNR10DHZ Bulk 22 1
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    R10D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R10D Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    R10D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher


    Original     		RMLV0408E 512-kword R10DS0206EJ0100 288-word 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44164095B-A μPD44164185B-A 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0016EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44164095B-A is a 2,097,152-word by 9-bit and the μPD44164185B-A is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell.


    Original     		PD44164095B-A PD44164185B-A 18M-BIT R10DS0016EJ0100 PD44164095B-A 152-word PD44164185B-A 576-word 18-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the


    Original     		PD44165084B-A PD44165094B-A PD44165184B-A PD44165364B-A 18M-BIT R10DS0018EJ0100 PD44165084B-A 152-word PD44165094B-A PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized


    Original     		R1LV5256E 256Kb R10DS0068EJ0100 256-Kbit 768-word 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R1EX25512ASA00I R1EX25512ATA00I Serial Peripheral Interface 512K EEPROM 64-Kword x 8-bit R10DS0044EJ0100 Rev.1.00 Oct.04, 2010 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and


    Original     		R1EX25512ASA00I R1EX25512ATA00I 64-Kword R10DS0044EJ0100 R1EX25xxx 128-byte PDF

    R1LP0108ESA-7SR

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		R1LP0108E R10DS0151EJ0100 072-word 32-pin R1LP0108ESA-7SR PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R1EX24512BSAS0I R1EX24512BTAS0I Two-wire serial interface 512k EEPROM 64-kword x 8-bit R10DS0026EJ0500 Rev.5.00 Dec 18, 2013 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They


    Original     		R1EX24512BSAS0I R1EX24512BTAS0I 64-kword R10DS0026EJ0500 R1EX24xxx 128-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit R10DS0146EJ0101 R1Q4A4436RBG 304-word 36-bit R1Q4A4418RBG 608-word 18-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R1EX25008ASA00G/R1EX25008ATA00G R1EX25016ASA00G/R1EX25016ATA00G Serial Peripheral Interface 8k EEPROM 1024-word  8-bit 16k EEPROM (2048-word  8-bit) 105°C SPI-bus EEPROM R10DS0083EJ0100 Rev.1.00 Oct. 02, 2012 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and


    Original     		R1EX25008ASA00G/R1EX25008ATA00G R1EX25016ASA00G/R1EX25016ATA00G 1024-word 2048-word R10DS0083EJ0100 R1EX25xxx R1EX25xxxG PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet R1EX24008ASAS0I R1EX24008ATAS0I Two-wire serial interface 8k EEPROM 1024-word x 8-bit R10DS0210EJ0100 Rev.1.00 Nov 08, 2013 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory


    Original     		R1EX24008ASAS0I R1EX24008ATAS0I 1024-word R10DS0210EJ0100 R1EX24xxx 16-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit


    Original     		R1QLA4436RBG, R1QLA4418RBG 144-Mbit R10DS0144EJ0100 R1QLA4436RBG 304-word 36-bit R1QLA4418RBG 608-word 18-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		R1LP0108E R10DS0029EJ0300 072-word 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R1EX24032ASAS0G R1EX24032ATAS0G Two-wire serial interface 32k EEPROM 4-kword x 8-bit 2 105°C I C-bus EEPROM R10DS0081EJ0300 Rev.3.00 Jan 30, 2014 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).


    Original     		R1EX24032ASAS0G R1EX24032ATAS0G R10DS0081EJ0300 R1EX24xxx R1EX24xxxG PDF

    PRSP0008DF-B

    Abstract: R1EX25512ASA00I
    Text: Preliminary Datasheet R1EX25512ASA00I R1EX25512ATA00I Serial Peripheral Interface 512K EEPROM 64-Kword x 8-bit R10DS0044EJ0100 Rev.1.00 Oct.04, 2010 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and


    Original     		R1EX25512ASA00I R1EX25512ATA00I 64-Kword R10DS0044EJ0100 R1EX25xxx 128-byte PRSP0008DF-B R1EX25512ASA00I PDF

    qk1 -0120

    Abstract: PD48011418 PD48011436 QK101
    Text: Preliminary Datasheet PD48011418 μPD48011436 1.1G-BIT Low Latency DRAM-III R10DS0013EJ0001 Rev.0.01 Aug 18, 2010 Common I/O Burst Length of 4 Description The μPD48011418 is a 67,108,864-word by 18-bit and the μPD48011436 is a 33,554,432-word by 36-bit synchronous


    Original     		PD48011418 PD48011436 R10DS0013EJ0001 PD48011418 864-word 18-bit PD48011436 432-word 36-bit qk1 -0120 QK101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PD48576209 PD48576218 PD48576236 576M-BIT 864-word PD48576236 PD48576209, PDF

    PD44325092B

    Abstract: PD44325362BF5-E35-FQ1-A jtag timing
    Text: Datasheet PD44325092B-A μPD44325182B-A μPD44325362B-A 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325092B-A is a 4,194,304-word by 9-bit, the μPD44325182B-A is a 2,097,152-word by 18-bit and the


    Original     		PD44325092B-A PD44325182B-A PD44325362B-A 36M-BIT R10DS0038EJ0100 PD44325092B-A 304-word PD44325182B-A 152-word 18-bit PD44325092B PD44325362BF5-E35-FQ1-A jtag timing PDF

    QK1-1

    Abstract: PD48011318 qk1# qk101 0Z99
    Text: Preliminary Datasheet PD48011318 μPD48011336 R10DS0012EJ0001 Rev.0.01 Aug 18, 2010 1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 2 Description The μPD48011318 is a 67,108,864-word by 18-bit and the μPD48011336 is a 33,554,432-word by 36-bit synchronous


    Original     		PD48011318 PD48011336 R10DS0012EJ0001 PD48011318 864-word 18-bit PD48011336 432-word 36-bit QK1-1 qk1# qk101 0Z99 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with


    Original     		PD44325092B PD44325182B PD44325362B 36M-BIT 304-word 152-word 18-bit PD44325362B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R1EV24064ASAS0I Two-wire serial interface 64k EEPROM 8-kword  8-bit R10DS0127EJ0001 Rev.0.01 Aug. 24, 2012 Description R1EV24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory


    Original     		R1EV24064ASAS0I R1EV24xxx 32-byte R10DS0127EJ0001 32-byte/page PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0208BSA 2Mb Advanced LPSRAM 256k word x 8bit R10DS0050EJ0100 Rev.1.00 2011.03.30 Description The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density,


    Original     		R1LV0208BSA R10DS0050EJ0100 R1LV0208BSA 144-word 32-pin PDF

    ieee 1149

    Abstract: No abstract text available
    Text: Datasheet PD44325084B-A μPD44325094B-A μPD44325184B-A μPD44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the


    Original     		PD44325084B-A PD44325094B-A PD44325184B-A PD44325364B-A 36M-BIT R10DS0039EJ0100 PD44325084B-A 304-word PD44325094B-A ieee 1149 PDF

    R1LP0108ESP

    Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		R1LP0108E R10DS0029EJ0200 072-word 32-pin R1LP0108ESP R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit


    Original     		R1QEA4436RBG, R1QEA4418RBG 144-Mbit R10DS0142EJ0100 R1QEA4436RBG 304-word 36-bit R1QEA4418RBG 608-word 18-bit PDF