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    MOSFET ESD RATED Search Results

    MOSFET ESD RATED Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET ESD RATED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3055L transistor

    Abstract: Mosfet Sot223
    Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,


    Original     		PDF RFT3055LE TA49158. RFT3055LE OT-223 330mm EIA-481 3055L transistor Mosfet Sot223

    RFG60P06E

    Abstract: P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 60V • 2kV ESD Rated The RFG60P06E incorporates ESD protection and is designed to withstand 2kV Human Body Model of ESD. • Related Literature Formerly developmental type TA09836.


    Original     		PDF RFG60P06E RFG60P06E P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06

    JESD22-A108C

    Abstract: JESD22-A108-C JESD22A-101-B
    Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B JESD22-A108C JESD22-A108-C JESD22A-101-B

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K

    SOT-323

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2


    Original     		PDF 2N7002KW 120sec 260sec 30sec DS-251127 SOT-323

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038

    RFD8P06LESM9A

    Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
    Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06LE, RFD8P06LESM, RFP8P06LE TA49203. 175oC RFD8P06LESM9A m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2

    NVA4153NT1G

    Abstract: No abstract text available
    Text: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate


    Original     		PDF NTA4153N, NTE4153N, NVA4153N, NVE4153N NTA4153N/D NVA4153NT1G

    NTA4153NT1G

    Abstract: NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416
    Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available


    Original     		PDF NTA4153N, NTE4153N SC-75 SC-89 NTA4153N/D NTA4153NT1G NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416

    Untitled

    Abstract: No abstract text available
    Text: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable


    Original     		PDF NVA4153N, NVE4153N NTA4153N/D

    NTA4153NT1G

    Abstract: NTA4153N NTA4153NT1 NTE4153N NTE4153NT1G
    Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available


    Original     		PDF NTA4153N, NTE4153N SC-75 SC-89 NTA4153N/D NTA4153NT1G NTA4153N NTA4153NT1 NTE4153N NTE4153NT1G

    3055L

    Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
    Text: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve


    Original     		PDF RFT3055LE TA49158. TB334, OT-223 3055L TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334

    Untitled

    Abstract: No abstract text available
    Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available


    Original     		PDF NTA4153N, NTE4153N NTA4153N/D

    40V 60A MOSFET

    Abstract: RFG60P05E TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 40V 60A MOSFET RFG60P05E TB334

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 RFG60P05E TB334

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: RFG60P06E rfg60p06 TA09836
    Text: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits


    Original     		PDF RFG60P06E RFG60P06E 175oC P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06 TA09836

    LSI1013XT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V G-S MOSFET FEATURES TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns


    Original     		PDF LSI1013XT1G S-LSI1013XT1G AEC-Q101 SC-89 463C-01 463C-02. LSI1013XT1G

    rfg60p06

    Abstract: No abstract text available
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,


    Original     		PDF RFG60P06E RFG60P06E TA09836. rfg60p06

    Si7703EDN

    Abstract: 1600 v mosfet
    Text: Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt


    Original     		PDF Si7703EDN 07-mm S-03709--Rev. 14-May-01 1600 v mosfet

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		PDF RFG60P05E TA09835. O-247 175oC RFG60P05E TB334

    Untitled

    Abstract: No abstract text available
    Text: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are


    OCR Scan     		PDF RFT1P06E 0-285i2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated


    OCR Scan     		PDF RFG60P05E O-247 11e-1 34e-3TRS2 46e-12) 15e-10 1e-30 42e-4 85e-3

    3055L

    Abstract: TA49158
    Text: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives


    OCR Scan     		PDF RFT3055LE TA49158. RFT3055LE AN7254 AN7260. 3055L TA49158

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes


    OCR Scan     		PDF RFG60P05E TA09835. 0-030i2