LM5112MY
Abstract: LM5112
Text: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with
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LM5112
LM5112
SNVS234B
LM5112MY
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equivalent 2sk2837 mosfet
Abstract: No abstract text available
Text: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s
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HIGH POWER MOSFET TOSHIBA
Abstract: all mosfet power TPD7101F MOSFET TOSHIBA
Text: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective
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TPD7101F
TPD7101F
HIGH POWER MOSFET TOSHIBA
all mosfet power
MOSFET TOSHIBA
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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Untitled
Abstract: No abstract text available
Text: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 |Yfs|: forward transfer admittance |Yfs| = ΔID/ΔVGS
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
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SHD218414
SHD218414A
SHD218414B
MTC3N100E
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225409 TECHNICAL DATA DATA SHEET 871, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.21 Ohm, -13A MOSFET Hermetic Metal Package Fast Switching Electrically Equivalent to IRFY9140 Series MAXIMUM RATINGS
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SHD225409
IRFY9140
SHD225409
O-254
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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TC227
Abstract: No abstract text available
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
TC227
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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KMB3D0P30SA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB3D0P30SA TECHNICAL DATA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.
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KMB3D0P30SA
Fig10.
KMB3D0P30SA
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IC 4051 data sheet
Abstract: IRF9140 SHD239409
Text: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series MAXIMUM RATINGS
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SHD239409
IRF9140
-250mA
IC 4051 data sheet
SHD239409
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
UT2305L-AG3-R
UT2305G-AG3-R
OT-23-3
OT-23
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mosfet equivalent
Abstract: selection criteria of bipolar transistor totempole driver resonant converter
Text: FEATURE ARTICLE Applications Dictate Bipolar or MOSFET Power Switch Choices Despite huge investments in MOSFET technologies over recent years, bipolar transistors have continued to be developed to rival or exceed MOSFET performance in many applications. It's therefore important
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utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
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2P50EG
Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
2P50EG
2P50
2p50e
AN569
MTP2P50E
MTP2P50EG
mosfet transistor 400 volts.100 amperes
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SCH1412
Abstract: SCH2808
Text: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)
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SCH2808
ENN8360
SCH1412)
SS0503)
SCH1412
SCH2808
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9971P Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.
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UT9971P
UT9971P
UT9971PL-AA3-R
UT9971PG-AA3-R
OT-223
QW-R502-764
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IRFP150N
Abstract: No abstract text available
Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,
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IRFP150N
O-247
IRFP150N
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86886
Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)
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CPH5846
EN8688
MCH3309)
SS10015M)
86886
diode sy 710
mch5846
CPH5846
MCH3309
SS10015M
ss-1001
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MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),
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CPH5854
ENA0516
MCH3312)
SB1003M3)
A0516-6/6
MCH3312
CPH5854
SB1003M3
A05166
marking YG
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48V SMPS
Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Text: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
48V SMPS
smps 48v 12v
ISL6144IV
ISL6144IVZA
MO-220
0805 resistor package
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AN569
Abstract: MTP1N50E mtp1n
Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to
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MTP1N50E
r14525
MTP1N50E/D
AN569
MTP1N50E
mtp1n
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching
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OCR Scan
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FX853
FX853
2SK1467
SB05-05P,
10//S,
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