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    MOSFET DEVICE EFFECTS ON PHASE NODE RINGING Search Results

    MOSFET DEVICE EFFECTS ON PHASE NODE RINGING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DEVICE EFFECTS ON PHASE NODE RINGING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN2170

    Abstract: MOSFET Device Effects on Phase Node Ringing snubber circuit for mosfet Snubber circuit Design RC snubber mosfet design
    Text: AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION The growth in production volume of industrial equipment e.g., power DC-DC converters devoted to lowmedium-voltage applications has dramatically increased in recent years. This widespread increase occurred along with a similar production increase of power MOSFET devices, due to their higher switching


    Original     		PDF AN2170 AN2170 MOSFET Device Effects on Phase Node Ringing snubber circuit for mosfet Snubber circuit Design RC snubber mosfet design

    MOSFET Device Effects on Phase Node Ringing

    Abstract: 300khz mosfet driver IC IRF7805
    Text: A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today’s servers and high-end desktop computer CPUs require peak currents of around 60A-80A and next generation processors will be in the order of 100A. Similarly, the transient response in today’s CPUs is in the


    Original     		PDF 0A-80A 00A/us. iP2001 IRF7805 PD-91746C, MOSFET Device Effects on Phase Node Ringing 300khz mosfet driver IC

    S1-0248

    Abstract: D2140
    Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769CD 18-Jul-08 S1-0248 D2140

    Self-Oscillating Flyback mosfet

    Abstract: A4401 A4401K A4401KL-T vmosfet MOSFET Device Effects on Phase Node Ringing
    Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components


    Original     		PDF A4401 Self-Oscillating Flyback mosfet A4401K A4401KL-T vmosfet MOSFET Device Effects on Phase Node Ringing

    Self-Oscillating Flyback mosfet

    Abstract: snubber circuit for mosfet LLC
    Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components


    Original     		PDF A4401 Self-Oscillating Flyback mosfet snubber circuit for mosfet LLC

    SiC769CD

    Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
    Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769CD 18-Jul-08 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR

    Untitled

    Abstract: No abstract text available
    Text: A4401 Automotive Quasi-Resonant Flyback Control IC Description Features and Benefits This device provides all the necessary control functions to provide the power rails for driving a vacuum fluorescent display VFD using minimal external components. The power


    Original     		PDF A4401

    Self-Oscillating Flyback mosfet

    Abstract: A4401 Self Oscillating Flyback Converters AEC-Q100-002 IPC7351 JESD51-5 STPS160U Self-Oscillating Flyback Flyback Self-Oscillating three phase vfd circuit diagram
    Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components


    Original     		PDF A4401 Self-Oscillating Flyback mosfet A4401 Self Oscillating Flyback Converters AEC-Q100-002 IPC7351 JESD51-5 STPS160U Self-Oscillating Flyback Flyback Self-Oscillating three phase vfd circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: A4401 Automotive Quasi-Resonant Flyback Control IC Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components


    Original     		PDF A4401

    Self-Oscillating Flyback Converters

    Abstract: Self-Oscillating Flyback mosfet A4401KL-T "Vacuum Fluorescent Display" 38 PIN vacuum fluorescent display self resonant driver A4401 AEC-Q100-002 STPS160U Operational Transconductance Amplifier
    Text: A4401 Automotive Low Noise Vacuum Fluorescent Display Power Supply Features and Benefits Description ▪ Multiple output regulator ▪ 7 to 40 V input supply ▪ Low EMI conducted and radiated emissions ▪ Adaptive quasi-resonant turn on/off control ▪ Minimal number of external components


    Original     		PDF A4401 Self-Oscillating Flyback Converters Self-Oscillating Flyback mosfet A4401KL-T "Vacuum Fluorescent Display" 38 PIN vacuum fluorescent display self resonant driver A4401 AEC-Q100-002 STPS160U Operational Transconductance Amplifier

    SiC762CD

    Abstract: SiC762 100C MLP66-40 intel drMOS compliant X640P
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 18-Jul-08 SiC762 100C MLP66-40 intel drMOS compliant X640P

    Untitled

    Abstract: No abstract text available
    Text: WIDEBAND, LOW DISTORTION TECHNIQUES APPLICATION NOTE 17 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 WIDEBAND, LOW DISTORTION TECHNIQUES FOR MOSFET POWER AMPS Shake table systems, function generators and acoustic instruments


    Original     		PDF 546-APEX 100pF AN17U

    acoustic filter 40khz

    Abstract: resistor 1K 300w amplifier OP37 PA04 PA07 Applications of rc coupled amplifier OP AMP
    Text: WIDEBAND, LOW DISTORTION TECHNIQUES APPLICATION NOTE 17 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 WIDEBAND, LOW DISTORTION TECHNIQUES FOR MOSFET POWER AMPS Shake table systems, function generators and acoustic instruments


    Original     		PDF 546-APEX 100pF AN17U acoustic filter 40khz resistor 1K 300w amplifier OP37 PA04 PA07 Applications of rc coupled amplifier OP AMP

    national semiconductor cmos

    Abstract: LMC6482 PSpice LMC662 equivalent spice model high gain cmos opamp lmc662 spice LMC6482 AN-138 national AN-856 LMC6041 LMC6044
    Text: National Semiconductor Application Note 856 David Hindi September 1992 Abstract are modeled by properly setting the leakage currents on the input protection diodes DP1–DP4. Quiescent current is modeled with the combination of I2 and the R8–R9 series resistors. As the supply voltage increases, the current through R8


    Original     		PDF AN-856 national semiconductor cmos LMC6482 PSpice LMC662 equivalent spice model high gain cmos opamp lmc662 spice LMC6482 AN-138 national AN-856 LMC6041 LMC6044

    Untitled

    Abstract: No abstract text available
    Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769 SiC769CD 11-Mar-11

    MLP66-40

    Abstract: Diode Marking LG
    Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769 SiC769CD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MLP66-40 Diode Marking LG

    IHLP5050FDER

    Abstract: drMOS compatible SiC762CD
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IHLP5050FDER drMOS compatible

    Untitled

    Abstract: No abstract text available
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    100C

    Abstract: MLP66-40 SiC769 SiC769CD SiC769CD-T1-E3
    Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC769 11-Mar-11 100C MLP66-40 SiC769 SiC769CD SiC769CD-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI


    Original     		PDF SiC762CD 11-Mar-11

    FA04

    Abstract: OP37 PA04 PA07 MOSFET AMPLIFIER jerry steele mosfet op amp
    Text: S im p le C ir c u it D esig n T e c h n iq u e s A p p lie d To N e w MOSFET P o w e r Op Amps P r o d u c e H ig h L i n e a r i t y A n d B a n d w id th W ith o u t S a c r if ic in g A c c u ra c y A n d S ta b ility . D esign Techniques fo r MOSFET P ow er Op Amps


    OCR Scan     		PDF gain-of-100 FA04 OP37 PA04 PA07 MOSFET AMPLIFIER jerry steele mosfet op amp