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    MOSFET AMPLIFIER RF CLASS AB Search Results

    MOSFET AMPLIFIER RF CLASS AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET AMPLIFIER RF CLASS AB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25c2625

    Abstract: MHW1910 MHW1910-1 mos 4801
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ


    Original     		PDF MHW1910/D MHW1910-1 301AW MHW1910 25c2625 MHW1910-1 mos 4801

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1014N MMRF1014NT1

    mosfet amplifier class ab rf

    Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


    Original     		PDF QPP-001 QPP-001 180max mosfet amplifier class ab rf "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB

    "RF MOSFET CLASS AB

    Abstract: RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


    Original     		PDF QPP-002 QPP-002 180max "RF MOSFET CLASS AB RF MOSFET CLASS AB

    500 watts amplifier schematic diagram pcb layout

    Abstract: MRF19090
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier


    Original     		PDF MRF19090 MRF19090S MRF19090 500 watts amplifier schematic diagram pcb layout

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF19030 MRF19030S

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF IntegrF19120 MRF19120S MRF19120

    z40 mosfet

    Abstract: MRF19120
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120 z40 mosfet MRF19120

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120

    Z-34

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S Z-34

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120 MRF19120/D

    1000w power amplifier circuit diagram

    Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
    Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply


    Original     		PDF APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


    Original     		PDF APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w

    9702a

    Abstract: ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar
    Text: APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF 9702a ARF448A/B 50MHz. 100MHz. 9702a ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar

    power amplifier mosfet up to 50mhz

    Abstract: APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448
    Text: APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF ARF448A/B 50MHz. 100MHz. power amplifier mosfet up to 50mhz APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448

    DE275-102N06X2A

    Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
    Text: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate


    Original     		PDF PRF-1150 56MHz DEIC420 DE275X2-102N06A 0-471-03018-X DE275-102N06X2A 102n06x2a amplifier circuit diagram class D 1000w circuit diagram of 13.56MHz RF Generator plasma DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz

    JESD22-C101A

    Abstract: PD27025F RF MOSFET CLASS AB
    Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station


    Original     		PDF PD27025F PD27025F JESD22-C101A RF MOSFET CLASS AB

    JESD22-C101A

    Abstract: PD25025F RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A
    Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station


    Original     		PDF PD25025F PD25025F JESD22-C101A RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A

    JESD22-C101A

    Abstract: PD27025F
    Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station


    Original     		PDF PD27025F PD27025F 330mA 100kHz JESD22-C101A

    JESD22-C101A

    Abstract: PD25025F rf transistor 2.5GHz RF MOSFET CLASS AB
    Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station


    Original     		PDF PD25025F PD25025F 330mA 100kHz JESD22-C101A rf transistor 2.5GHz RF MOSFET CLASS AB