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    MRF21120 Search Results

    MRF21120 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF21120 Freescale Semiconductor MRF21120R6 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21120 Motorola RF Power Field Effect Transistor Original PDF
    MRF21120 Motorola MRF21120 RF Power Transistor Original PDF
    MRF21120R6 Freescale Semiconductor 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21120R6 Freescale Semiconductor 2110-2170 MHz, 120 W, 28 V, Lateral N-Channel RF Power MOSFET Original PDF
    MRF21120S Motorola 2170 MHZ, 120 W, 28 V POWER Original PDF

    MRF21120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A4514

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120 MRF21120R6 A4514

    CJB99

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 RF Reference Design Library RF Power Field Effect Transistor MRF21120R6 UMTS N - Channel Enhancement - Mode Lateral MOSFET


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    PDF MRF21120R6 CJB99

    226 35K capacitor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120 MRF21120R6 226 35K capacitor

    capacitor 106 35K

    Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


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    PDF MRF21120/D MRF21120 MRF21120S MRF21120 capacitor 106 35K capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


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    PDF MRF21120/D MRF21120 MRF21120S MRF21120

    226 35K

    Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120 MRF21120R6 226 35K 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k

    226 35K capacitor

    Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


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    PDF MRF21120/D MRF21120 226 35K capacitor MRF21120 z40 mosfet 226 35K capacitor 226 35K

    226 35K capacitor

    Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120R6 226 35K capacitor capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k

    226 35K capacitor

    Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


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    PDF MRF21120/D MRF21120 MRF21120S MRF21120 226 35K capacitor 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor

    226 35K capacitor

    Abstract: capacitor 226 35K R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF 2170fficiency, MRF21120 MRF21120S 226 35K capacitor capacitor 226 35K R 226 35k

    capacitor 226 35K

    Abstract: 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


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    PDF MRF21120/D MRF21120 MRF21120S capacitor 226 35K 226 35K capacitor

    c38 transistor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21120 MRF21120R6 c38 transistor

    capacitor 226 35K

    Abstract: R 226 35k 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21120/D MRF21120 MRF21120/D capacitor 226 35K R 226 35k 226 35K capacitor

    226 35k 051

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


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    PDF MRF21120/D MRF21120 MRF21120S MRF21120/D 226 35k 051

    226 35K

    Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21120 MRF21120R6 226 35K capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


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    PDF MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k

    z40 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


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    PDF MRF21120/D MRF21120R6 MRF21120/D z40 mosfet

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


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    PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


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    PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode